A low friction wear film includes a chromium layer provided on a surface of a metal substrate, a tungsten carbide layer provided on a surface of the chromium layer, and a diamond-like carbon layer as a top layer provided on a surface of the tungsten carbide layer. The tungsten carbide layer includes a chromium-tungsten carbide gradient layer and a tungsten carbide uniform layer. In the tungsten carbide layer, a tungsten-concentrated layer in which a tungsten simple substance is present is not provided at a boundary between the chromium-tungsten carbide gradient layer and the tungsten carbide uniform layer.

The carrier-foil-attached ultra-thin copper foil according to one embodiment of the present invention comprises a carrier foil, a release layer, a first ultra-thin copper foil, an Al layer, and a second ultra-thin copper foil, wherein the release layer may comprise a first metal (A1) having peeling properties, and a second metal (B1) and third metal (C1) facilitating the plating of the first metal (A1).

Interconnect structures and methods and apparatuses for forming the same are disclosed. In an embodiment, a method includes supplying a process gas to a process chamber; igniting the process gas into a plasma in the process chamber; reducing a pressure of the process chamber to less than 0.3 mTorr; and after reducing the pressure of the process chamber, depositing a conductive layer on a substrate in the process chamber.

A nuclear fuel cladding element comprises a substrate made of a material containing zirconium and a protective coating covering the substrate on the outside. The protective coating is being made of a material containing chromium, and has a columnar microstructure composed of columnar grains and having on the outer surface thereof a microdroplet density of less than 100 per mm2.

Described herein is a chamber component including a metal layer comprising nickel and a barrier layer of nickel oxide over the metal layer. The barrier layer of nickel oxide may be formed by ozone treating the chamber component with air, nitrogen or argon O.sub.2, O.sub.3 at a temperature from about 25° C. to about 350° C.

An oxide superconducting wire includes a superconducting laminate including an oxide superconducting layer disposed, either directly or indirectly, on a substrate, and a stabilization layer which is a Cu plating layer covering an outer periphery of the superconducting laminate, and a Vickers hardness of the Cu plating layer is in the range of 80 to 190 HV.

A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising an upper shield with two holes that are positioned to permit alternate sputtering from two targets.

The present disclosure generally relates to a storage device comprising soft bias structures having high coercivity and high anisotropy, and a method of forming thereof. The soft bias structures may be formed by moving a wafer in a first direction under a plume of NiFe to deposit a first NiFe layer at a first angle, moving the wafer in a second direction anti-parallel to the first direction to deposit a second NiFe layer at a second angle on the first NiFe layer, and repeating one or more times. The soft bias structures may be formed by rotating a wafer to a first position, depositing a first NiFe layer at a first angle, rotating the wafer to a second position, depositing a second NiFe layer at a second angle on the first NiFe layer, and repeating one or more times. The first and second NiFe layers have different grain structures.

A method of fabricating an integrated circuit includes forming a titanium nitride layer over a semiconductor substrate in a process chamber and forming a poisoned titanium layer on the titanium nitride layer in the process chamber. Forming the titanium nitride layer includes sputtering titanium from a titanium sputter target using a first nitrogen flow. Forming the poisoned titanium layer includes sputtering titanium from the titanium sputter target using a lower second nitrogen flow. The method also forms an aluminum layer on the poisoned titanium layer.

A sputtering apparatus including a chamber, a gas supply configured to supply the chamber with a first gas and a second inert gas, the first inert gas and the second inert gas having a first evaporation point and second evaporation point, respectively, a plurality of sputter guns in an upper portion of the chamber, a chuck in a lower portion of the chamber and facing the sputter guns, the chuck configured to accommodate a substrate thereon, and a cooling unit connected to a lower portion of the chuck, the cooling unit configured to cool the chuck to a temperature less than the first evaporation point and greater than the second evaporation point, and a method of fabricating a magnetic memory device may be provided.