A copper foil with a release layer is provided that capable of forming a circuit, of such as an embedded trace substrate, by a subtractive method in a simple process. A copper foil with a release layer, containing, in this order, a release layer; a barrier layer having dissolution resistance to a copper etchant; and a copper foil.

Provided are: a novel electrode which is suitable for use in an input device as typified by a capacitive touch panel sensor, and which has low electrical resistivity and low reflectance; and a method for producing this electrode. This electrode has a multilayer structure comprising a first layer that is formed of an Al film or an Al alloy film and a second layer that is partially nitrided and is formed of an Al alloy containing Al and at least one element selected from the group consisting of Mn, Cu, Ti and Ta.

Performance of a semiconductor device is improved. In one embodiment, for example, deposition time is increased from 4.6 sec to 6.9 sec. In other words, in one embodiment, thickness of a tantalum nitride film is increased by increasing the deposition time. Specifically, in one embodiment, deposition time is increased such that a tantalum nitride film provided on the bottom of a connection hole to be coupled to a wide interconnection has a thickness within a range from 5 to 10 nm.

A high-entropy alloy film, the composition of which includes titanium, zirconium, niobium, tantalum and iron. The high-entropy alloy film is made with a combination of elements with high biocompatibility, and its formation of non-crystalline structure is further improved by adding iron. Furthermore, as the content of titanium in the high-entropy alloy film is adjusted, the microstructure, mechanical properties, and corrosion resistance of the high-entropy alloy film is changed as well.

The present invention relates to a method for forming an amorphous layer on one surface of a second substrate through a simple method of performing laser irradiation on a multilayered metal layer provided on a first substrate.

A method of forming a patterned polymer layer on a substrate and a substrate having a polymer layer formed by the method. The method includes providing a substrate comprising a first surface having a first surface energy and a pattern located on the substrate forming a second surface having a second, lower surface energy than the first surface, and selectively depositing a polymeric layer onto the first surface using a monomer material in an initiated chemical vapor deposition process, wherein the initiated chemical vapor deposition process is operated under supersaturation conditions during the deposition process.

A biosensor for single cell analysis is disclosed. The biosensor includes a substrate, an array of electrodes, and a passivation layer. The substrate includes a roughened surface, where the array of electrodes is patterned on the roughened surface. Each electrode includes a distal tip and a proximal end. The passivation layer is deposited on top of the biosensor and includes a microwell around the distal tip of an electrode. A single cell is trapped within the microwell and adhered onto the distal tip of the electrode for further single cell analysis.

An in-plane magnetized film for use as a hard bias layer of a magnetoresistive effect element contains metal Co, metal Pt, and an oxide and has a thickness of 20 nm or more and 80 nm or less, wherein: the in-plane magnetized film contains the metal Co in an amount of 45 at% or more and 80 at% or less and the metal Pt in an amount of 20 at% or more and 55 at% or less relative to a total of metal components of the in-plane magnetized film; the in-plane magnetized film contains the oxide in an amount of 3 vol% or more and 25 vol% or less relative to a whole amount of the in-plane magnetized film; and the in-plane direction average grain diameter of magnetic crystal grains of the in-plane magnetized film is 15 nm or more and 30 nm or less.

A method of forming a silicide film including: disposing a semiconductor wafer containing silicon as a constituent element in a sputtering chamber; evacuating an inside of the sputtering chamber until a pressure reaches 9×10.sup.−5 Pa or less; introducing a sputtering gas into the sputtering chamber and sputtering a target in the sputtering chamber to deposit a metal film on the semiconductor wafer; and causing a laser beam to be incident into the metal film deposited on the semiconductor wafer to form a metal silicide film by a silicide reaction.

Provided is a copper alloy sputtering target, wherein, based on charged particle activation analysis, the copper alloy sputtering target has an oxygen content of 0.6 wtppm or less, or an oxygen content of 2 wtppm or less and a carbon content of 0.6 wtppm or less. Additionally provided is a method for manufacturing a copper alloy sputtering target, wherein a copper raw material is melted in a vacuum or an inert gas atmosphere, a reducing gas is thereafter introduced into the melting atmosphere, an alloy element is subsequently added to a molten metal for alloying, and an obtained ingot is processed into a target shape. The present invention aims to provide a copper alloy sputtering target that generates few particles during sputtering, and a method for manufacturing such a sputtering target.