A method for creating a flat optical structure is disclosed, having steps of providing a substrate, etching at least one nanotrench in the substrate, placing a dielectric material in the at least one nanotrench in the substrate and encapsulating a top of the substrate with a film.

A simple, one-step method for producing a homogenous CeO.sub.2—TiO.sub.2 composite thin film using aerosol-assisted chemical vapor deposition (“CVD”) of a solution containing triacetatocerium (III) and tetra isopropoxytitanium (IV) on a fluorine-doped tin oxide (“FTO”) substrate at a temperature ranging from about 500 to about 650° C. Methods for using the film produced by this method.

Disclosed is a LiDAR window integrated optical filter that includes a window of a polymer material for absorbing a visible light band and transmitting a near-infrared band; and an upper reflective layer and a lower reflective layer formed on the upper surface and the lower surface of the window. The upper reflective layer and the lower reflective layer may be formed in a thin film including titanium dioxide (TiO.sub.2) and silicon dioxide (SiO.sub.2).

A group 5 metal compound according to an embodiment of the present disclosure is represented by any one of the following <Chemical Formula 1> and <Chemical Formula 2>: ##STR00001## In <Chemical Formula 1> and <Chemical Formula 2>, M is any one selected from group 5 metal elements, n is any one selected from an integer of 1 to 5, R.sub.1 is any one selected from a linear alkyl group having 3 to 6 carbon atoms and a branched alkyl group having 3 to 6 carbon atoms, and R.sub.2 and R.sub.3 are each independently any one selected from hydrogen, a linear alkyl group having 1 to 4 carbon atoms, and a branched alkyl group having 1 to 4 carbon atoms.

A ground shield of a processing chamber includes a ceramic body including a ground shield plate, a raised edge extending from an upper surface of the ground shield plate, and a hollow shaft that extends from a lower surface of the ground shield plate. An electrically conductive layer is formed on and conforms to at least the upper surface of the ground shield plate and an interior surface of the hollow shaft. A first protective layer is formed on at least the electrically conductive layer. A heater plate of a heater first within the raised edge and on the ground shield plate such that the heater plate is disposed on top of the first protective layer, the electrically conductive layer, and the upper surface of the ground shield plate.

Embodiments described and discussed herein provide methods for selectively depositing a metal oxides on a substrate. In one or more embodiments, methods for forming a metal oxide material includes positioning a substrate within a processing chamber, where the substrate has passivated and non-passivated surfaces, exposing the substrate to a first metal alkoxide precursor to selectively deposit a first metal oxide layer on or over the non-passivated surface, and exposing the substrate to a second metal alkoxide precursor to selectively deposit a second metal oxide layer on the first metal oxide layer. The method also includes sequentially repeating exposing the substrate to the first and second metal alkoxide precursors to produce a laminate film containing alternating layers of the first and second metal oxide layers. Each of the first and second metal alkoxide precursors contains a different metal selected from titanium, zirconium, hafnium, aluminum, or lanthanum.

The invention provides a facile process for preparing various Group VI precursor compounds, set forth below as Formula (I), useful in the vapor deposition of certain Group VI metals onto solid substrates, especially microelectronic semiconductor device substrates. Also provided is a process for the preparation of such precursor compounds. Additionally, the invention provides a method for vapor deposition of Group VI metals onto microelectronic device substrates utilizing the precursor compounds of the invention.

The present disclosure relates to an yttrium/lanthanide metal precursor compound, a precursor composition for depositing an yttrium/lanthanide metal-containing film including the yttrium/lanthanide metal precursor compound, and a method of depositing the yttrium/lanthanide metal-containing film using the precursor composition.

A method for fabricating a semiconductor device is provided. The method includes depositing a ferroelectric layer over the substrate; performing a first ionized physical deposition process to deposit a top electrode layer over the ferroelectric layer; patterning the top electrode layer into a top electrode; and patterning the ferroelectric layer to into a ferroelectric element below the top electrode.

A coated cutting tool having a substrate and a coating is provided. The coating includes an inner α-Al.sub.2O.sub.3-multilayer and an outer α-Al.sub.2O.sub.3-single-layer. The thickness of the inner α-Al.sub.2O.sub.3-multilayer is less than or equal to 35% of the sum of the thickness of the inner α-Al.sub.2O.sub.3-multilayer and the thickness of the outer α-Al.sub.2O.sub.3-single-layer. The sum of the thickness of the inner α-Al.sub.2O.sub.3-multilayer and the outer α-Al.sub.2O.sub.3-single-layer is 2-15 μm. The inner α-Al.sub.2O.sub.3-multilayer consists of alternating sublayers of α-Al.sub.2O.sub.3 and sublayers of TiCO, TiCNO, AlTiCO or AlTiCNO. The inner α-Al.sub.2O.sub.3-multilayer can include at least 5 sublayers of α-Al.sub.2O.sub.3.