In some embodiments, a semiconductor fabrication tool is provided. The semiconductor fabrication tool includes a first processing zone having a first ambient environment and a second processing zone having a second ambient environment disposed at different location inside a processing chamber. A first exhaust port and a second exhaust port are disposed in the first and second processing zones, respectively. A first exhaust pipe couples the first exhaust port to a first individual exhaust output. A second exhaust pipe couples the second exhaust port to a second individual exhaust output, where the second exhaust pipe is separate from the first exhaust pipe. A first adjustable fluid control element controls the first ambient environment. A second adjustable fluid control element controls the second ambient environment, where the first adjustable fluid control element and the second adjustable fluid control element are independently adjustable.

The invention relates to a process for obtaining a electrode usable as a anode in electrolytic cells for the production of chlorine. The electrode thus obtained comprises a catalytic layer containing oxides of tin, ruthenium, iridium and titanium applied to a substrate of a valve metal.

A method for depositing a coating on a continuous carbon or ceramic fiber from a precursor of the coating, the method including at least the heating of at least one segment of the fiber in the presence of a liquid or supercritical phase of the coating precursor by a laser beam so as to bring the surface of the segment to a temperature allowing the formation of the coating on the segment from the coating precursor.

Methods for selective deposition of silicon oxide films on dielectric surfaces relative to metal surfaces are provided. A metal surface of a substrate may be selectively passivated relative to the dielectric surface, such as with a polyimide layer or thiol SAM. Silicon oxide is selectively deposited on the dielectric surface relative to the passivated metal surface by contacting the dielectric surface with a metal catalyst and a silicon precursor comprising a silanol.

In some embodiments, a semiconductor fabrication tool is provided. The semiconductor fabrication tool includes a first processing zone having a first ambient environment and a second processing zone having a second ambient environment disposed at different location inside a processing chamber. A first exhaust port and a second exhaust port are disposed in the first and second processing zones, respectively. A first exhaust pipe couples the first exhaust port to a first individual exhaust output. A second exhaust pipe couples the second exhaust port to a second individual exhaust output, where the second exhaust pipe is separate from the first exhaust pipe. A first adjustable fluid control element controls the first ambient environment. A second adjustable fluid control element controls the second ambient environment, where the first adjustable fluid control element and the second adjustable fluid control element are independently adjustable.

There is provided a technique of forming an insulating film containing silicon oxide. A coating solution containing polysilazane is applied onto a wafer W, the solvent of the coating solution is volatilized, and the coating film is irradiated with ultraviolet rays in nitrogen atmosphere before performing a curing process. Dangling bonds are generated in silicon which is a pre-hydrolyzed site in polysilazane. Therefore, the energy for hydrolysis is reduced, and unhydrolyzed sites are reduced even when the temperature of the curing process is 350° C. Since efficient dehydration condensation occurs, the crosslinking rate is improved, and a dense (good-quality) insulation film is formed. By forming a protective film on the surface of the coating film to which ultraviolet rays irradiated, the reaction of dangling bonds prior to the curing process is suppressed.

Aspects described herein generally relate to a sol-gel that is the reaction product of an organosilane, a metal alkoxide, an acid, and chromium (III) salt and/or a lanthanide salt having a solubility of about 1 gram or greater per gram of sol-gel at 23 C. The lanthanide salt includes a cation and a ligand. The cation can be lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, scandium, yttrium, cobalt, calcium, strontium, barium, and zirconium. A ligand can be a nitrate, a trifluoromethane sulfonate, a sulfate, a phosphate, a hydroxide, or hydrate forms thereof. The chromium (III) salt includes a cation and a ligand. The cation is chromium (III) and the ligand can be a nitrate, a trifluoromethane sulfonate, a sulfate, a phosphate, a hydroxide, or hydrate forms thereof.

A method for manufacturing an atomizing unit, comprises a step A of forming an oxide film on a surface of a heating element forming a part of an atomizing unit that atomizes an aerosol source, by supplying electric power to the heating element, in a state where the heating element is processed into a heater shape.

Provided is a coating liquid for forming a piezoelectric thin film containing lead zirconate titanate, the coating liquid including a complex precursor containing at least three kinds of metal elements of Pb, Ti, and Zr, the coating liquid being free from an exothermic peak at a temperature of 450 C. or more, or having a heat generation amount at a temperature of from 400 C. to 450 C., which is larger than a heat generation amount at a temperature of from 450 C. to 500 C., in differential thermal analysis of the coating liquid.

A film forming method of forming a film on a substrate includes: annealing the substrate; and supplying mist of a raw material solution of the film to a surface of the substrate after the annealing while heating the substrate at a temperature lower than a temperature of the substrate during the annealing.