A plating processing method of a gripping surface of a gripping tool includes: temporarily and evenly fixing a plurality of first diamond grains having a uniform first grain diameter; adhering the first diamond grains by depositing a metal containing nickel on a gripping surface in a uniform thickness after the first diamond grains have been temporarily fixed; placing a plurality of second diamond grains having a second grain diameter on a metal surface of the gripping surface on which first diamond grains are not present; and adhering the second diamond grains by further depositing a metal containing nickel within a second plating solution on the metal surface in a uniform thickness that does not exceed the first diameter grain and the second diameter grain until a position relationship between the metal surface and the second diamond grains is not displaced even when the gripping tool is moved.

This disclosure provides a method for forming a plating film capable of suppressing deterioration of a plating solution, and a film formation device. The embodiment is a method for forming a metal plating film on a metal substrate by a substitution-type electroless plating method. The method includes bringing a porous film containing an electroless plating solution into contact with a surface of the metal substrate, and the porous film has an anionic group.

A method of producing an electroconductive substrate including a base material, and an electroconductive pattern disposed on one main surface side of the base material includes: a step of forming a trench including a bottom surface to which a foundation layer is exposed, and a lateral surface which includes a surface of a trench formation layer, according to an imprint method; and a step of forming an electroconductive pattern layer by growing metal plating from the foundation layer which is exposed to the bottom surface of the trench.

Described examples include a process that includes forming a diffusion barrier layer on a backside of a semiconductor wafer. The process also includes forming a seed copper layer on the diffusion barrier layer. The process also includes forming a copper layer on the seed copper layer. The process also includes immersion plating a silver layer on the copper layer.

Some embodiments are directed to techniques for building single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while others use an intervening adhesion layer material. Some embodiments use different seed layer and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while others apply the materials in blanket fashion. Some embodiments remove extraneous material via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.

A chemically amplified positive resist composition is provided comprising (A) a polymer adapted to tarn soluble in alkaline aqueous solution under the action, of acid, (B) a photoacid generator, (C) a car boxy lie acid, and (D) a benzotriazole compound and/or an imidazole compound. When the resist composition is coated on a copper substrate as a thick film of 5-250 m thick and lithographically processed into a pattern, a high resolution is available and the pattern is of rectangular profile.

The disclosed technology generally relates to forming metallization structures for integrated circuit devices by plating, and more particularly to plating metallization structures that are thicker than masking layers used to define the metallization structures. In one aspect, a method of metallizing an integrated circuit device includes plating a first metal on a substrate in a first opening formed through a first masking layer, where the first opening defines a first region of the substrate, and plating a second metal on the substrate in a second opening formed through a second masking layer, where the second opening defines a second region of the substrate. The second opening is wider than the first opening and the second region encompasses the first region of the substrate.

A method of producing an electroconductive substrate including a base material, and an electroconductive pattern disposed on one main surface side of the base material includes: a step of forming a trench including a bottom surface to which a foundation layer is exposed, and a lateral surface which includes a surface of a trench formation layer, according to an imprint method; and a step of forming an electroconductive pattern layer by growing metal plating from the foundation layer which is exposed to the bottom surface of the trench.

Provided are an electronic component manufacturing method by which even a platable layer made of a difficult-to-plate material can be easily plated with good adhesion without using a special chemical solution or a photolithography technique, and an electronic component which has a peel strength of 0.1 N/mm or greater as measured by a copper foil peel test. A picosecond laser beam having a pulse duration on the order of a picosecond or a femtosecond laser beam having a pulse duration on the order of a femtosecond is emitted at a surface of a platable layer (2) in order to roughen the surface, a wiring pattern is formed using a mask (13), and a plated part (12) is formed on the surface of the wiring pattern.

Graphene oxide is used as an insulation barrier layer for metal deposition. After patterning and modification, the chemical characteristics of graphene oxide are induced. It can be used as the catalyst for electroless plating in the metallization process, so that the metal is only deposited on the patterned area. It provides the advantages of improving reliability and yield. The metallization structure includes a substrate, a graphene oxide catalytic layer, and a metal layer. It may be widely applied to the metallization of the fine pitch metal of a semiconductor package as well as the fine pitch wires of a printed circuit board (PCB), touch panels, displays, fine electrodes of solar cells, and so on.