Embodiments provide an etchant composition including (A) a copper ion source, (B) a source of an organic acid ion having one or more carboxyl groups in a molecule, (C) a fluoride ion source, (D) an etching controller, a surface oxidizing power enhancer or a combination thereof as a first additive, and (E) a surfactant as a second additive; a method for etching a multilayered film; and a method for preparing a display device.

Embodiments provide an etchant composition including (A) a copper ion source, (B) a source of an organic acid ion having one or more carboxyl groups in a molecule, (C) a fluoride ion source, (D) an etching controller, a surface oxidizing power enhancer or a combination thereof as a first additive, and (E) a surfactant as a second additive; a method for etching a multilayered film; and a method for preparing a display device.

A method for transferring a graphene sheet from a copper substrate to a functional substrate includes forming the graphene sheet on the copper substrate using chemical vapor deposition, and irradiating the graphene sheet disposed on the copper substrate with a plurality of xenon ions using broad beam irradiation to form a prepared graphene sheet. The prepared graphene sheet is resistant to forming unintentional defects induced during transfer of the prepared graphene sheet to the functional substrate. The method further includes removing the copper substrate from the prepared graphene sheet using an etchant bath, floating the prepared graphene sheet in a floating bath, submerging the functional substrate in the floating bath, and decreasing a fluid level of the floating bath to lower the prepared graphene sheet onto the functional substrate.

Object is to provide an etching solution which generates less foam and can etch copper or copper alloy at high selectivity when used in a step of etching copper or 5 copper alloy in an electronic substrate having both of copper or copper alloy and nickel. The etching solution to be used in a step of selectively etching copper or copper alloy in an electronic substrate having both of copper or copper alloy and nickel has, as essential components thereof, (A) a linear alkanolamine, (B) a chelating agent having an acid group in the molecule thereof, and (C) hydrogen peroxide.

Object is to provide an etching solution which generates less foam and can etch copper or copper alloy at high selectivity when used in a step of etching copper or 5 copper alloy in an electronic substrate having both of copper or copper alloy and nickel. The etching solution to be used in a step of selectively etching copper or copper alloy in an electronic substrate having both of copper or copper alloy and nickel has, as essential components thereof, (A) a linear alkanolamine, (B) a chelating agent having an acid group in the molecule thereof, and (C) hydrogen peroxide.

The present invention is related to a composition for micro etching of a copper or a copper alloy surface, wherein the composition comprises i) at least a source of Fe.sup.3+ ions, ii) at least a source of Br.sup.− ions, iii) at least an inorganic acid, and iv) at least one etch refiner according to formula I

##STR00001## wherein R1 is selected from the group consisting of hydrogen, C.sub.1-C.sub.5-alkyl or a substituted aryl or alkaryl group; R2 is selected from the group consisting of hydrogen, C.sub.1-C.sub.5-alkyl or C.sub.1-C.sub.5-alkoxy; R3, R4 are selected from the group consisting of hydrogen and C.sub.1-C.sub.5-alkyl; and X.sup.− is a suitable anion. Further, the present invention is directed to a method for micro etching of copper or copper alloy surfaces using such a composition.

The present invention is related to a composition for micro etching of a copper or a copper alloy surface, wherein the composition comprises i) at least a source of Fe.sup.3+ ions, ii) at least a source of Br.sup.− ions, iii) at least an inorganic acid, and iv) at least one etch refiner according to formula I

##STR00001## wherein R1 is selected from the group consisting of hydrogen, C.sub.1-C.sub.5-alkyl or a substituted aryl or alkaryl group; R2 is selected from the group consisting of hydrogen, C.sub.1-C.sub.5-alkyl or C.sub.1-C.sub.5-alkoxy; R3, R4 are selected from the group consisting of hydrogen and C.sub.1-C.sub.5-alkyl; and X.sup.− is a suitable anion. Further, the present invention is directed to a method for micro etching of copper or copper alloy surfaces using such a composition.

Disclosed is a method for manufacturing a substrate gap supporter. The method includes: a first step of forming metal foils on both sides of an insulating plate; a second step of etching the metal foils to expose the insulating plate so that a plurality of stripes are arranged on both sides of the insulating plate in parallel at constant intervals, wherein the stripes expose the insulating plate at constant widths; and a third step of cutting in direction in parallel with the stripes and in direction in vertical with the stripes along one edges of the stripes to complete the gap supporter.

An etchant composition is provided comprising a persulfate from 0.5 to 20 wt %; a fluoride compound from 0.01 to 2 wt %; an inorganic acid from 1 to 10 wt %; a N (nitrogen atom)-containing heterocyclic compound from 0.5 to 5 wt %; a chloride compound from 0.1 to 5 wt %; a copper salt from 0.05 to 3 wt %; an organic acid or an organic acid salt from 0.1 to 10 wt %; an electron-donating compound from at 0.1 to 5 wt %; and a solvent of the residual amount. Also provided is a method of manufacturing a display device by using the same.

An etchant composition is provided comprising a persulfate from 0.5 to 20 wt %; a fluoride compound from 0.01 to 2 wt %; an inorganic acid from 1 to 10 wt %; a N (nitrogen atom)-containing heterocyclic compound from 0.5 to 5 wt %; a chloride compound from 0.1 to 5 wt %; a copper salt from 0.05 to 3 wt %; an organic acid or an organic acid salt from 0.1 to 10 wt %; an electron-donating compound from at 0.1 to 5 wt %; and a solvent of the residual amount. Also provided is a method of manufacturing a display device by using the same.