Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.

A method for plating a printed circuit board, includes placing a substrate, including a through hole, in contact with a plating solution and disposing the substrate to face an electrode; and applying a pulsed current to each surface of the substrate, including applying pulsed currents of opposite polarity to both surfaces of the substrate at least once and applying pulsed forward currents to both surfaces of the substrate at least once, to plate from a middle to an end of the through hole.

A method for plating a printed circuit board, includes placing a substrate, including a through hole, in contact with a plating solution and disposing the substrate to face an electrode; and applying a pulsed current to each surface of the substrate, including applying pulsed currents of opposite polarity to both surfaces of the substrate at least once and applying pulsed forward currents to both surfaces of the substrate at least once, to plate from a middle to an end of the through hole.

Implementations of the disclosure may include methods of electroplating features formed on a semiconductor device, such as the trenches and vias formed by single or dual Damascene processes using a cobalt plating bath. The cobalt electroplating bath may contain “additive packages” or “additive systems” that include a combination of additives in certain ratios that facilitate the metal filling of high aspect ratio sub-micrometer features. Implementations of the disclosure provide new cobalt plating bath methods and chemistries and that include alkyl modified imidazoles, imidazolines, and imidazolidines suppressor compounds.

Implementations of the disclosure may include methods of electroplating features formed on a semiconductor device, such as the trenches and vias formed by single or dual Damascene processes using a cobalt plating bath. The cobalt electroplating bath may contain “additive packages” or “additive systems” that include a combination of additives in certain ratios that facilitate the metal filling of high aspect ratio sub-micrometer features. Implementations of the disclosure provide new cobalt plating bath methods and chemistries and that include alkyl modified imidazoles, imidazolines, and imidazolidines suppressor compounds.

An aqueous bath for filling a vertical interconnect access or trench of a work piece with nickel or a nickel alloy, the bath comprising a source of nickel ions, and optionally a source of ions of at least one alloying metal, at least one buffering agent, at least one of a dimer of a compound of formula (I) or mixtures thereof ##STR00001## wherein R.sub.1 is a substituted or unsubstituted alkenyl group, R.sub.2 may be present or not, and if present R.sub.2 is a —(CH.sub.2).sub.n—SO.sub.3.sup.− group, wherein n is an integer in the range of 1-6, and wherein one or more of the hydrogens in the group may be replaced by a substituent, preferably hydroxide; and
a method for filling a vertical interconnect access or trench of a work piece with nickel or a nickel alloy with said aqueous bath.

An aqueous bath for filling a vertical interconnect access or trench of a work piece with nickel or a nickel alloy, the bath comprising a source of nickel ions, and optionally a source of ions of at least one alloying metal, at least one buffering agent, at least one of a dimer of a compound of formula (I) or mixtures thereof ##STR00001## wherein R.sub.1 is a substituted or unsubstituted alkenyl group, R.sub.2 may be present or not, and if present R.sub.2 is a —(CH.sub.2).sub.n—SO.sub.3.sup.− group, wherein n is an integer in the range of 1-6, and wherein one or more of the hydrogens in the group may be replaced by a substituent, preferably hydroxide; and
a method for filling a vertical interconnect access or trench of a work piece with nickel or a nickel alloy with said aqueous bath.

Method for preparing high-strength and durable super-hydrophobic film layer on inner wall of elongated metal tube includes roughening treatment of inner wall of a metal tube, electrodepositing preparation of nickel-phosphorus alloy layer and functional coating, heat treatment, subsequent anodizing and low surface energy modification. The method greatly reduces the influence of local mass transfer resistance, and a uniform nanocrystalline film layer is electroplated under the ultrasound induction. Since only electroplating solution is filled in the tube during the preparation process, the consumption of device and raw materials is greatly reduced. Also, since silica particles are added to the electroplating solution in preparing the nanocrystalline film layer, the surface morphology can be made more uniform and denser in terms of the microscopic morphology. Nano-scale channels structures are etched, so that the super-hydrophobic inner surface can have a better ability to store air, and its water flow impact resistance is greatly enhanced.

Method for preparing high-strength and durable super-hydrophobic film layer on inner wall of elongated metal tube includes roughening treatment of inner wall of a metal tube, electrodepositing preparation of nickel-phosphorus alloy layer and functional coating, heat treatment, subsequent anodizing and low surface energy modification. The method greatly reduces the influence of local mass transfer resistance, and a uniform nanocrystalline film layer is electroplated under the ultrasound induction. Since only electroplating solution is filled in the tube during the preparation process, the consumption of device and raw materials is greatly reduced. Also, since silica particles are added to the electroplating solution in preparing the nanocrystalline film layer, the surface morphology can be made more uniform and denser in terms of the microscopic morphology. Nano-scale channels structures are etched, so that the super-hydrophobic inner surface can have a better ability to store air, and its water flow impact resistance is greatly enhanced.

A method for plating a printed circuit board, includes placing a substrate, including a through hole, in contact with a plating solution and disposing the substrate to face an electrode; and applying a pulsed current to each surface of the substrate, including applying pulsed currents of opposite polarity to both surfaces of the substrate at least once and applying pulsed forward currents to both surfaces of the substrate at least once, to plate from a middle to an end of the through hole.