A method for method for manufacturing a rutile titanium dioxide layer according to the inventive concept includes forming a sacrificial layer on a substrate, and depositing a titanium dioxide (TiO.sub.2) material on the sacrificial layer. The sacrificial layer includes a metal oxide of a rutile phase. An amount of oxygen vacancy of the sacrificial layer after depositing the titanium dioxide material is greater than an amount of oxygen vacancy of the sacrificial layer before depositing the titanium dioxide material. The metal oxide includes a metal different from titanium (Ti).

The present invention provides a PZN-based large-size ternary high-performance single crystal, a growing method and a molten salt furnace. The PZN-based large-size ternary high-performance single crystal is represented by formula (1-x-y)Pb(B′.sub.1/2B″.sub.1/2)O.sub.3-yPb(Zn.sub.1/3Nb.sub.2/3)O.sub.3-xPbTiO.sub.3, wherein B′ is Mg, Fe, Sc, Ni, In, Yb, Lu and/or Ho, B″ is Nb, Ta and/or W, 0.4<x<0.6, 0.1<y<0.4, 0.1<1-x-y<0.4. The present invention adjusts the convective change of the melt through the rotation of the top seed and the bottom crucible, overcoming the problems of serious crystal inclusions and poor crystal quality during the growth process, and can adapt the change of the crystal diameter to the thermal inertia of the heat preservation system, thus effectively reducing crystal inclusions and improving the yield of the crystal.

The present invention provides a PZN-based large-size ternary high-performance single crystal, a growing method and a molten salt furnace. The PZN-based large-size ternary high-performance single crystal is represented by formula (1-x-y)Pb(B′.sub.1/2B″.sub.1/2)O.sub.3-yPb(Zn.sub.1/3Nb.sub.2/3)O.sub.3-xPbTiO.sub.3, wherein B′ is Mg, Fe, Sc, Ni, In, Yb, Lu and/or Ho, B″ is Nb, Ta and/or W, 0.4<x<0.6, 0.1<y<0.4, 0.1<1-x-y<0.4. The present invention adjusts the convective change of the melt through the rotation of the top seed and the bottom crucible, overcoming the problems of serious crystal inclusions and poor crystal quality during the growth process, and can adapt the change of the crystal diameter to the thermal inertia of the heat preservation system, thus effectively reducing crystal inclusions and improving the yield of the crystal.

Various forms of Mg.sub.xGe.sub.1-xO.sub.2-x are disclosed, where the Mg.sub.xGe.sub.1-xO.sub.2-x are epitaxial layers formed on a substrate comprising a substantially single crystal substrate material. The epitaxial layer of Mg.sub.xGe.sub.1-xO.sub.2-x has a crystal symmetry compatible with the substrate material. Semiconductor structures and devices comprising the epitaxial layer of Mg.sub.xGe.sub.1-xO.sub.2-x are disclosed, along with methods of making the epitaxial layers and semiconductor structures and devices.

Various forms of Mg.sub.xGe.sub.1-xO.sub.2-x are disclosed, where the Mg.sub.xGe.sub.1-xO.sub.2-x are epitaxial layers formed on a substrate comprising a substantially single crystal substrate material. The epitaxial layer of Mg.sub.xGe.sub.1-xO.sub.2-x has a crystal symmetry compatible with the substrate material. Semiconductor structures and devices comprising the epitaxial layer of Mg.sub.xGe.sub.1-xO.sub.2-x are disclosed, along with methods of making the epitaxial layers and semiconductor structures and devices.

A method of forming a film comprises growing, using a deposition system, at least a portion of the film and analyzing, using a RHEED instrument, the at least a portion of the film. Using a computer, data is acquired from the RHEED instrument that is indicative of a stoichiometry of the at least a portion of the film. Using the computer, adjustments to one or more process parameters of the deposition system are calculated to control stoichiometry of the film during subsequent deposition. Using the computer, instructions are transmitted to the deposition system to execute the adjustments of the one or more process parameters. Using the deposition system, the one or more process parameters are adjusted.

A method of forming a film comprises growing, using a deposition system, at least a portion of the film and analyzing, using a RHEED instrument, the at least a portion of the film. Using a computer, data is acquired from the RHEED instrument that is indicative of a stoichiometry of the at least a portion of the film. Using the computer, adjustments to one or more process parameters of the deposition system are calculated to control stoichiometry of the film during subsequent deposition. Using the computer, instructions are transmitted to the deposition system to execute the adjustments of the one or more process parameters. Using the deposition system, the one or more process parameters are adjusted.

An electrochemical device includes a negative electrode containing a negative electrode active material, a positive electrode, and an electrolyte. The negative electrode active material has a crystal structure with an Fm3m space group and contains a compound represented by composition formula (1) below,

Li.sub.xTi.sub.yO.sub.z   Formula (1), where 0.4≦x/y<2 and x/2+3y/2≦z≦x/2+2y.

An electrochemical device includes a negative electrode containing a negative electrode active material, a positive electrode, and an electrolyte. The negative electrode active material has a crystal structure with an Fm3m space group and contains a compound represented by composition formula (1) below,

Li.sub.xTi.sub.yO.sub.z   Formula (1), where 0.4≦x/y<2 and x/2+3y/2≦z≦x/2+2y.

A method may include stretching a deformable bounding element into a stretched state. The method may further include coating the deformable bounding element with at least one layer of an anti-reflective material while the deformable bounding element is in the stretched state and assembling an optical lens assembly including the deformable bounding element, such that the optical lens assembly adjusts at least one optical property by controlling a shape of the deformable bounding element. The deformable bounding element may have less tension when in a neutral state than the deformable bounding element has when in the stretched state. The method may additionally include coating the deformable bounding element with at least one layer of an anti-reflective material while the deformable bounding element is not in a stretched state. Various other apparatuses, systems, and methods are also disclosed.