A module having a power semiconductor device and a ceramic capacitor which is configured for cooling the power semiconductor device.

A module having a power semiconductor device and a ceramic capacitor which is configured for cooling the power semiconductor device.

The present invention relates to a ceramic material for a multilayer capacitor. The ceramic material has a composition according to the following general formula:

Pb.sub.(y−1.5a−0.5b+c+0.5d−0.5e−f)Ca.sub.aA.sub.b(Zr.sub.1−xTi.sub.x).sub.(1−c−d−e−d)E.sub.cFe.sub.dNb.sub.eW.sub.fO.sub.3,

where
A is one or more of the group of Na, K and Ag;
E is one or more of the group of Cu, Ni, Hf, Si and Mn; and
0<a<0.14,
0.05≤x≤0.3,
0≤b≤0.12,
0<c≤0.12,
0≤d≤0.12,
0≤e≤0.12,
0≤f≤0.12,
0.9≤y≤1.5 and
0.001<b+c+d+e+f
applies.

Further, the invention includes a capacitor comprising the described ceramic material.

Provided is a piezoelectric single crystal-polycrystal ceramic composite, a method of manufacturing the same, and piezoelectric and dielectric application components using the piezoelectric single crystal-polycrystal ceramic composite. The piezoelectric single crystal-polycrystal ceramic composite shows that complexation is carried out by the optimization of a ratio between grain size distributions of a piezoelectric single crystal and polycrystal ceramic grains, and a volume ratio of the contained piezoelectric single crystal so that mass production simultaneously with excellent piezoelectric characteristics of the piezoelectric single crystal can be realized, and the cost of production can be reduced, so the piezoelectric single crystal-polycrystal ceramic composite can be applied to piezoelectric and dielectric application components, like ultrasonic transducers, piezoelectric actuators, piezoelectric sensors, dielectric capacitors, electric field-generating transducers, and electric field and vibration-generating transducers, using the piezoelectric single crystal-polycrystal ceramic composite, and the piezoelectric single crystal-polycrystal ceramic composite can enhance piezoelectric characteristics and competitiveness in prices.

A piezoelectric ceramic containing a perovskite-type compound containing at least Pb, Zr, Ti, Mn, and Nb, in which in an X-ray crystal structure analysis chart of the perovskite-type compound, there is no X-ray diffraction peak branching between a (101) plane of a main peak of a PZT tetra phase in a range of 2θ=30.5° to 31.5° and a (110) plane on which an X-ray diffraction peak is in a range of 2θ=30.8° to 31.8°, and a number of X-ray diffraction peaks based on the (101) plane and the (110) plane is one.

A piezoelectric device comprises: a substrate (12) and a lead magnesium niobate-lead titanate (PMNPT) piezoelectric film on the substrate (12). The PMNPT film comprises: a thermal oxide layer (20) on the substrate (12); a first electrode above on the thermal oxide layer (20); a seed layer (26) above the first electrode; a lead magnesium niobate-lead titanate (PMNPT) piezoelectric layer (16) on the seed layer (26), and a second electrode on the PMNPT piezoelectric layer (16). The PMNPT film comprises a piezoelectric coefficient (d33) of greater than or equal to 200 pm/V.

A piezoelectric device comprises: a substrate (12) and a lead magnesium niobate-lead titanate (PMNPT) piezoelectric film on the substrate (12). The PMNPT film comprises: a thermal oxide layer (20) on the substrate (12); a first electrode above on the thermal oxide layer (20); a seed layer (26) above the first electrode; a lead magnesium niobate-lead titanate (PMNPT) piezoelectric layer (16) on the seed layer (26), and a second electrode on the PMNPT piezoelectric layer (16). The PMNPT film comprises a piezoelectric coefficient (d33) of greater than or equal to 200 pm/V.

A method for producing a piezoelectric component is disclosed. In an embodiment, the method includes producing a ceramic precursor material of the general formula Pb.sub.1-x-y-(2a-b)/2V.sub.(2a-b)/2Ba.sub.xSr.sub.y[(Ti.sub.zZr.sub.1-z).sub.1-a-bW.sub.aRE.sub.b]O.sub.3, where RE is a rare earth metal and V is a Pb vacancy, mixing the ceramic precursor material with a sintering aid, forming a stack which includes alternating layers including the ceramic precursor material and a layer including Cu and debindering and sintering the stack thereby forming the piezoelectric component having Cu electrodes and at least one piezoelectric ceramic layer including Pb.sub.1-x-y-[(2a-b)/2]-p/2V.sub.[(2a-b)/2-p/2]Cu.sub.pBa.sub.xSr.sub.y[(Ti.sub.zZr.sub.1-z).sub.1-a-bW.sub.aRE.sub.b]O.sub.3, where 0x0.035, 0y0.025, 0.42z0.5, 0.0045a0.009, 0.009b0.011, and 2a>b, p2ab.

A method for producing a piezoelectric component is disclosed. In an embodiment, the method includes producing a ceramic precursor material of the general formula Pb.sub.1-x-y-(2a-b)/2V.sub.(2a-b)/2Ba.sub.xSr.sub.y[(Ti.sub.zZr.sub.1-z).sub.1-a-bW.sub.aRE.sub.b]O.sub.3, where RE is a rare earth metal and V is a Pb vacancy, mixing the ceramic precursor material with a sintering aid, forming a stack which includes alternating layers including the ceramic precursor material and a layer including Cu and debindering and sintering the stack thereby forming the piezoelectric component having Cu electrodes and at least one piezoelectric ceramic layer including Pb.sub.1-x-y-[(2a-b)/2]-p/2V.sub.[(2a-b)/2-p/2]Cu.sub.pBa.sub.xSr.sub.y[(Ti.sub.zZr.sub.1-z).sub.1-a-bW.sub.aRE.sub.b]O.sub.3, where 0x0.035, 0y0.025, 0.42z0.5, 0.0045a0.009, 0.009b0.011, and 2a>b, p2ab.

A piezoelectric ceramic speaker includes a piezoelectric element using a vibration sheet formed with piezoelectric ceramic having a primary phase constituted by ceramic grains of perovskite crystal structure containing Pb, Nb, Zn, Ti, and Zr, and a secondary phase constituted by ZnO grains, wherein the primary phase is constituted by ceramic grains expressed by a composition formula Pb {(Zr.sub.(1-a)Ti.sub.a).sub.x.Math.(Ni.sub.1/3Nb.sub.2/3).sub.y.Math.(Zn.sub.1/3Nb.sub.2/3).sub.z}O.sub.3 (where 0<x0.85, 0y<1, 0<z<1, x+y+z=1, and 0.45a0.60); and an enclosure which encloses the piezoelectric element.