The invention relates to a ceramic material, comprising lead zirconate titanate, which additionally contains K and optionally Cu. The ceramic material can be used in an electroceramic component, for example a piezoelectric actuator. The invention also relates to methods for producing the ceramic material and the electronic component.

A cordierite-based sintered body according to the present invention contains cordierite as a main component and silicon nitride or silicon carbide. The cordierite-based sintered body preferably has a thermal expansion coefficient less than 2.4 ppm; ° C. at 40° C. to 400° C., an open porosity of 0.5% or less, and an average grain size of 1 μm or less.

A sintered Ni ferrite body having a composition comprising, calculated as oxide, 47.0-48.3% by mol of Fe.sub.2O.sub.3, 14.5% or more and less than 25% by mol of ZnO, 8.2-10.0% by mol of CuO, and more than 0.6% and 2.5% or less by mol of CoO, the balance being NiO and inevitable impurities, and having an average crystal grain size of more than 2.5 μm and less than 5.5 μm.

The aim of the present invention lies in providing a dielectric composition which has a relatively high dielectric constant of 800 or greater, and which has relatively low dielectric loss of 4% or less when a DC bias of at least 8 V/ym is applied, and also in providing a dielectric element employing said dielectric composition, an electronic component, and a laminated electronic component. A dielectric composition having a main component represented by (Bi.sub.aNa.sub.bSr.sub.cBa.sub.d) (α.sub.xTi.sub.1-x) O.sub.3, characterized in that a is at least one selected from Zr and Sn; and a, b, c, d and x satisfy the following: 0.140≦a≦0.390, 0.140≦b≦0.390, 0.200≦c≦0.700, 0.020≦d≦0.240, 0.020≦x≦0.240 and 0.950<a+b+c+d≦1.050.

Electronic devices are produced from dielectric compositions comprising a mixture of precursor materials that, upon firing, forms a dielectric material comprising a barium-strontium-titanium-tungsten-silicon oxide.

A cubic boron nitride sintered body has between 50% and 75% cubic boron nitride by volume and between 25% and 50% binder phase by volume, and inevitable impurities. The binder phase contains an Al compound and a Zr compound. The Al compound contains Al and one or more of N, O and B; and the Zr compound contains Zr and one or more of C, N, O and B. At a polished surface of the cubic boron nitride sintered body, 40% or more of the Zr compounds satisfy the ratio 0.25≦n/N≦0.8, where: N represents the number of line segments drawn radially at equal intervals from a center of gravity of a given Zr compound to a boundary with a non-Zr compound; and n represents the number among those N line segments which intersect a boundary between the given Zr compound and cubic boron nitride.

A method of growing a FE material thin film using physical vapor deposition by pulsed laser deposition or RF sputtering is disclosed. The method involves creating a target to be used for the pulsed laser deposition in order to create a KBNNO thin film. The resultant KBNNO thin film is able to be used in photovoltaic cells.

A method for preparing a boron carbide material includes: providing raw materials of a boron material, a carbon material and a rare earth oxide, wherein an element molar ratio B:C of the boron material to the carbon material is in a range of 4:1 to 4:7, and the rare earth oxide is in an amount of 5 wt % or less based on a total weight of the raw materials, mixing and milling the raw materials to obtain a mixture, compressing the mixture into a tablet form by a tablet press, and sintering the compressed mixture by a laser, wherein the laser has a laser wavelength of 980 nm, a laser power in a range of 100 to 3000 W, and a laser irradiation time of 3 to 60 s.

The present disclosure relates to an orthophosphate thermal barrier coating material with high coefficient of thermal expansion and a preparation method thereof. ReM.sub.3P.sub.3O.sub.12 series ceramics with an eulytite crystal structure are prepared by a high-temperature solid-phase reaction for the first time. The ReM.sub.3P.sub.3O.sub.12 ceramic belongs to a −43 m space group of a cubic crystal system, which not only has a higher melting point and excellent high-temperature phase stability, but also has a lower thermal conductivity and a suitable coefficient of thermal expansion. It can effectively alleviate the stress caused by the mismatch of the coefficient of thermal expansion of the base material and the ceramic layer, so as to meet the requirements of thermal insulation and high-temperature oxidation and corrosion resistance of the hot end parts in long-term service, which has application prospects in the field of thermal barrier coatings.

A multilayer coil component including a magnetic part formed of a ferrite material, a non-magnetic part formed of a non-magnetic ferrite material, and a coiled conductive part embedded in the magnetic part and the non-magnetic part. The non-magnetic part has an Fe content of 36.0 to 48.5 mol % in terms of Fe.sub.2O.sub.3, a Zn content of 46.0 to 57.5 mol % in terms of ZnO, a V content of 0.5 to 5.0 mol % in terms of V.sub.2O.sub.5, a Mn content of 0 to 7.5 mol % in terms of Mn.sub.2O.sub.3, and a Cu content of 0 to 5.0 mol % in terms of CuO with respect to the sum of the Fe content in terms of Fe.sub.2O.sub.3, the Zn content in terms of ZnO, the V content in terms of V.sub.2O.sub.5, and if present, the Cu content in terms of CuO, and the Mn content in terms of Mn.sub.2O.sub.3.