A method of manufacturing a sputtering target includes the steps of providing a backing structure, providing target material comprising ceramic target material for spraying, subsequently thermal spraying the target material over the backing structure thus providing a target product where at least 40% in mass, for example at least 50% in mass, of the target material including a ceramic target material, and subsequently performing hot isostatic pressing on the target product thus increasing the density of the target material.

Particles of a refractory metal or a refractory-metal compound capable of decomposing or reacting into refractory-metal nanoparticles, elemental silicon, and an organic compound having a char yield of at least 60% by weight are combined to form a precursor mixture. The mixture is heating, forming a thermoset and/or metal nanoparticles. Further heating form a composition having nanoparticles of a refractory-metal silicide and a carbonaceous matrix. The composition is not in the form of a powder

A piezoelectric ceramic composition is represented by a composition formula A.sub.xBO.sub.3 and includes potassium sodium niobate containing K and Na that account for 80% or more of an amount of A-site elements and containing Nb that accounts for 70% or more of an amount of B-site elements. The piezoelectric ceramic composition contains Ta and Fe at a B-site.

The invention relates to a scintillation material of rare earth orthosilicate doped with a strong electron-affinitive element and its preparation method and application thereof. The chemical formula of the scintillation material of rare earth orthosilicate doped with the strong electron-affinitive element is: RE.sub.2(1−x−y+δ/2)Ce.sub.2xM.sub.(2y−δ)Si.sub.(1−δ)M.sub.δO.sub.5. In the formula, RE is rare earth ions and M is strong electron-affinitive doping elements; the value of x is 0<x≤0.05, the value of y is 0<y≤0.015, and the value of δ is 0≤δ≤10−4; and M is selected from at least one of tungsten, lead, molybdenum, tellurium, antimony, bismuth, mercury, silver, nickel, indium, thallium, niobium, titanium, tantalum, tin, cadmium, technetium, zirconium, rhenium, and gallium Ga.

The present invention relates to a ceramic material for a multilayer capacitor. The ceramic material has a composition according to the following general formula:

Pb.sub.(y−1.5a−0.5b+c+0.5d−0.5e−f)Ca.sub.aA.sub.b(Zr.sub.1−xTi.sub.x).sub.(1−c−d−e−d)E.sub.cFe.sub.dNb.sub.eW.sub.fO.sub.3,

where
A is one or more of the group of Na, K and Ag;
E is one or more of the group of Cu, Ni, Hf, Si and Mn; and
0<a<0.14,
0.05≤x≤0.3,
0≤b≤0.12,
0<c≤0.12,
0≤d≤0.12,
0≤e≤0.12,
0≤f≤0.12,
0.9≤y≤1.5 and
0.001<b+c+d+e+f
applies.

Further, the invention includes a capacitor comprising the described ceramic material.

A novel metal oxide or a novel sputtering target is provided. A sputtering target includes a conductive material and an insulating material. The insulating material includes an oxide, a nitride, or an oxynitride including an element M1. The element M1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be, and B. The conductive material includes an oxide, a nitride, or an oxynitride including indium and zinc. A metal oxide film is deposited using the sputtering target in which the conductive material and the insulating material are separated from each other.

A cBN-based ultra-high pressure sintered body contains cBN particles and a binder phase. The binder phase contains at least one of a nitride or oxide of Al or a nitride, carbide, or carbonitride of Ti, and a metal boride having an average particle diameter of 20 to 300 nm is dispersed in an amount of 0.1 to 5.0 vol % in the binder phase. The metal boride includes a metal boride (B) containing at least one of Nb, Ta, Cr, Mo, and W as a metal component and containing no Ti and a metal boride (A) containing only Ti as a metal component. In a case where a ratio (vol %) of the metal boride (A) in the metal boride is represented by V.sub.a and a ratio (vol %) of the metal boride (B) is represented by V.sub.b, a ratio of V.sub.b/V.sub.a is 0.1 to 1.0.

In a piezoelectric ceramic composition including potassium sodium niobate, a transition temperature at which a phase transition between an orthorhombic crystal structure and a tetragonal crystal structure occurs lies in a temperature range of −20° C. or higher and 60° C. or lower. In the piezoelectric ceramic composition, αt/αO is 0.72 or more, where αO represents a coefficient of linear expansion determined when a crystal structure is orthorhombic in the temperature range, and αt represents a coefficient of linear expansion determined when a crystal structure is tetragonal in the temperature range.

Provided is a dielectric composition containing: a main component expressed by {Ba.sub.xSr.sub.(1-x)}.sub.mTa.sub.4O.sub.12; and a first subcomponent, m satisfying a relationship of 1.95≤m≤2.40. The first subcomponent includes silicon and magnesium. When the amount of the main component contained in the dielectric composition is set to 100 parts by mole, the amount of silicon contained in the dielectric composition is 7.5 to 15.0 parts by mole in terms of SiO.sub.2, and the amount of magnesium contained in the dielectric composition is 5.0 to 22.5 parts by mole in terms of MgO.

The present invention provides a sintered body containing W and WC, having excellent hardness, strength, compactness, and corrosion resistance, without containing W.sub.2C, and capable of being used for the purpose of a cutting tool or a glass molding die, or a seal ring. There is provided a sintered body containing 4 to 50 vol % of tungsten metal as binder phases, 50 to 95 vol % of tungsten carbide (WC), and 0.5 to 5.0 vol % of tungsten oxide (WO.sub.2), in which the tungsten oxide (WO.sub.2) has an average grain size of 5 nm to 150 nm and is present in a sintered body structure at an average density of 5 to 20 particles/μm.sup.2.