Patent classifications
C23C18/1657
MICROLATTICE DAMPING MATERIAL AND METHOD FOR REPEATABLE ENERGY ABSORPTION
Described is a micro-lattice damping material and a method for repeatable energy absorption. The micro-lattice damping material is a cellular material formed of a three-dimensional interconnected network of hollow tubes. This material is operable to provide high damping, specifically acoustic, vibration or shock damping, by utilizing the energy absorption mechanism of hollow tube buckling, which is rendered repeatable by the micro-lattice architecture.
Process for fabricating high-precision objects by high-resolution lithography and dry deposition and objects thus obtained
The invention relates to a process for fabricating a high-precision object made of at least one inorganic material, comprising the following steps: using a high-resolution photolithography process, employing X-rays or UV rays depending on the desired degree of precision, in a chosen direction Z, to form a negative mold, which does not deform at the microscale during the steps of the process, in a material able to withstand a step for forming the object by dry deposition and capable of either being removed without altering the object fabricated or being separated from said object; choosing, independently of the normal redox potential of its constituent elements, at least one inorganic material from the set of materials that can be deposited by dry deposition and that allow the object to be fabricated to meet its thermomechanical and environmental specifications; and forming, by means of the non-deformable negative mold, the object to be fabricated by dry deposition of said at least one inorganic material, thereby allowing an object to be fabricated with better than microscale precision, especially with respect to the angle between the walls generated by the dry deposition and said direction Z. The invention is preferably applied to the fabrication of high-precision micromechanical objects, in particular in the aeronautical and clock-/watch-making fields.
ELECTROLESS SEMICONDUCTOR BONDING STRUCTURE, ELECTROLESS PLATING SYSTEM AND ELECTROLESS PLATING METHOD OF THE SAME
An electroless semiconductor bonding structure, an electroless plating system and an electroless plating method of the same are provided. The electroless semiconductor bonding structure includes a first substrate and a second substrate. The first substrate includes a first metal bonding structure disposed adjacent to a first surface of the first substrate. The second substrate includes a second metal bonding structure disposed adjacent to a second surface of the second substrate. The first metal bonding structure connects to the second metal bonding structure at an interface by electroless bonding and the interface is substantially void free.
Thermal barrier materials and coatings with low heat capacity and low thermal conductivity
Thermal barrier materials are provided that possess low heat capacity and low thermal conductivity, while at the same time, high structural integrity and robustness. In some embodiments, the disclosed coating comprises metal-containing spheres that are sintered or glued together and/or embedded in a matrix. The coating has at least 60% void volume fraction and closed porosity. The coating thickness is from 50 microns to 500 microns, and the metal spheres have an average diameter that is from about 5% to about 30% of the coating thickness. In some embodiments, the metal spheres have an average diameter that is 4-10 times smaller than the coating thickness. Thermal barrier materials with these coatings can be beneficial in engine applications, for example.
Bionic SERS substrate with metal-based compound eye bowl structure and its construction method and application
The present invention discloses a bionic SERS substrate of a metal-based compound eye bowl structure, a construction method and application. The bionic SERS substrate of the metal-based compound eye bowl structure of the present invention consists of a metal bowl and a cone-shaped structure substrate in an ordered hierarchy manner. The metal bowl is of a continuously and closely arranged single-layer bowl structure. A height of the metal bowl is 0.01-10 μm, and a bowl opening diameter is 0.01-10 μm. A cone is a micron pyramid cone, and a height of the micron pyramid cone is 1-100 μm. The present invention assembles the metal bowl on a surface of the substrate of the micron pyramid cone structure with great fluctuation by a solid-liquid interface chemical reduction method and a small ball template method, and further constructs a 3D SERS substrate with a bionic compound eye structure.
Hexagonal boron nitride structures
A microstructure comprises a plurality of interconnected units wherein the units are formed of hexagonal boron nitride (h-BN) tubes. The graphene tubes may be formed by photo-initiating the polymerization of a monomer in a pattern of interconnected units to form a polymer microlattice, removing unpolymerized monomer, coating the polymer microlattice with a metal, removing the polymer microlattice to leave a metal microlattice, depositing an h-BN precursor on the metal microlattice, converting the h-BN precursor to h-BN, and removing the metal microlattice.
GAS SENSOR WITH SUPERLATTICE STRUCTURE
A gas sensor has a microstructure sensing element which comprises a plurality of interconnected units wherein the units are formed of connected graphene tubes. The graphene tubes may be formed by photo-initiating the polymerization of a monomer in a pattern of interconnected units to form a polymer microlattice, removing unpolymerized monomer, coating the polymer microlattice with a metal, removing the polymer microlattice to leave a metal microlattice, depositing graphitic carbon on the metal microlattice, converting the graphitic carbon to graphene, and removing the metal microlattice.
MULTILAYER WIRING FORMING METHOD AND RECORDING MEDIUM
A multilayer wiring forming method includes forming, in a via 70 formed at a preset position in an insulating film 60 provided on a wiring 50 of a substrate, the via 70 being extended to the wiring 70, a monomolecular film 80 on a bottom surface 73 at which the wiring 50 is exposed; forming a barrier film 81 on a side surface 72 of the via 70; removing the monomolecular film 80; and forming an electroless plating film 82 from the bottom surface 73 of the via 70 by using the wiring 50 exposed at the bottom surface 73 of the via 70 as the catalyst.
Electroless Plating Method for Metal Gate Fill
Embodiments utilize an electro-chemical process to deposit a metal gate electrode in a gate opening in a gate replacement process for a nanosheet FinFET device. Accelerators and suppressors may be used to achieve a bottom-up deposition for a fill material of the metal gate electrode.
Method of preparing nanocomposite material plated with network-type metal layer through silica self-cracks and wearable electronics carbon fiber prepared therefrom
Provided is a method of preparing a nanocomposite material plated with a network-type metal layer through silica self-cracks and a wearable electronics carbon fiber prepared therefrom. The present disclosure provides a nanocomposite material having excellent electrical conductivity and bending resistance by plating a network-type metal layer on a substrate having a flat surface and/or a curved surface through a method of preparing the nanocomposite material in which the network-type metal layer is plated on silica self-cracks by applying a silica coating solution on the substrate having a flat or curved surface, performing drying after the applying of the silica coating solution to form the silica self-cracks having random crack directions and sizes, and performing electroless metal plating on the surface of the substrate. Further, the present disclosure provides a wearable electronics carbon fiber having excellent electrical conductivity and bending resistance.