Patent classifications
C08F220/1806
Eyelash Extension Adhesive
Provided is an eyelash extension adhesive comprising the following components (a) and (b): (a) a monofunctional monomer of formula (I) wherein R.sup.1 represents a hydrogen atom or a methyl group, and R.sup.2 to R.sup.6 each independently represent a hydrogen atom or a C1 to C6 alkyl group, and (b) a photopolymerization initiator. The eyelash extension adhesive is excellent in durability and water resistance, can adhere easily to eyelashes even in a wet state, and is very useful as a photopolymerizable adhesive for eyelash extension attachment not including a cyanoacrylate compound.
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PHOTOCURABLE COMPOSITION, CURED BODY, GASKET IN WHICH CURED BODY IS USED, WATERTIGHT STRUCTURE, AND METHOD FOR MANUFACTURING GASKET
A photocurable composition is provided. A cured product formed by curing the photocurable composition has reworkability and excellent heat resistance while having flexibility. The photocurable composition includes a telechelic acrylic polymer having an acryloyl group at both ends; a polyfunctional acrylic polymer having acryloyl groups; a monofunctional acrylic monomer; and a fumed silica including at least one of a hydrophilic fumed silica or a fumed silica having a polar group. The photocurable composition has a Martens hardness of 0.07 to 0.75 N/mm.sup.2, where the Martens hardness is a hardness after the photocurable composition is cured.
PHOTOCURABLE COMPOSITION, CURED BODY, GASKET IN WHICH CURED BODY IS USED, WATERTIGHT STRUCTURE, AND METHOD FOR MANUFACTURING GASKET
A photocurable composition is provided. A cured product formed by curing the photocurable composition has reworkability and excellent heat resistance while having flexibility. The photocurable composition includes a telechelic acrylic polymer having an acryloyl group at both ends; a polyfunctional acrylic polymer having acryloyl groups; a monofunctional acrylic monomer; and a fumed silica including at least one of a hydrophilic fumed silica or a fumed silica having a polar group. The photocurable composition has a Martens hardness of 0.07 to 0.75 N/mm.sup.2, where the Martens hardness is a hardness after the photocurable composition is cured.
ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, RESIST FILM, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
An actinic ray-sensitive or radiation-sensitive resin composition includes a salt including a sulfonium cation having an aryl group substituted with an acid-decomposable group-containing group and having at least three fluorine atoms; and a resin having a polarity that increases through decomposition by an action of an acid, in which the acid-decomposable group-containing group includes a group having a polarity that increases through decomposition by an action of an acid, and the acid-decomposable group-containing group includes no fluorine atom.
ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, RESIST FILM, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
An actinic ray-sensitive or radiation-sensitive resin composition includes a salt including a sulfonium cation having an aryl group substituted with an acid-decomposable group-containing group and having at least three fluorine atoms; and a resin having a polarity that increases through decomposition by an action of an acid, in which the acid-decomposable group-containing group includes a group having a polarity that increases through decomposition by an action of an acid, and the acid-decomposable group-containing group includes no fluorine atom.
Resist composition and pattern forming process
A resist composition comprising a base polymer and an acid generator containing a sulfonium salt having the formula (1) or an iodonium salt having the formula (2). ##STR00001##
Resist composition and pattern forming process
A resist composition comprising a base polymer and an acid generator containing a sulfonium salt having the formula (1) or an iodonium salt having the formula (2). ##STR00001##
PATTERN FORMING METHOD, RESIST PATTERN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOSITION FOR FORMING UPPER LAYER FILM
A pattern forming method includes: applying an actinic ray-sensitive or radiation- sensitive resin composition onto a substrate to form a resist film; forming an upper layer film on the resist film, using a composition for forming an upper layer film; exposing the resist film having the upper layer film formed thereon; and developing the exposed resist film using a developer including an organic solvent to form a pattern. The composition for forming an upper layer film contains a resin having a repeating unit (a) with a ClogP value of 2.85 or more and a compound (b) with a ClogP of 1.30 or less, and the receding contact angle of the upper layer film with water is 70 degrees or more, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method.
Positive resist composition and pattern forming process
A positive resist composition comprising a base polymer comprising recurring units having a carboxyl group whose hydrogen is substituted by a pyridine ring-containing tertiary hydrocarbyl group.
Positive resist composition and pattern forming process
A positive resist composition comprising a base polymer comprising recurring units having a carboxyl group whose hydrogen is substituted by a pyridine ring-containing tertiary hydrocarbyl group.