Described are viscoelastic damping materials and constructions which may demonstrate low temperature performance and adhesion and which may be used in making vibration damping composites. Viscoelastic damping materials and constructions may include polymers or copolymers of monomers according to formula I:
CH.sub.2═CHR.sup.1—COOR.sup.2  [I]
wherein R.sup.1 is H, CH.sub.3 or CH.sub.2CH.sub.3 and R.sup.2 is a branched alkyl group containing 12 to 32 carbon atoms.

The present invention relates to a resin composition including an acrylic polymer (A) and a thermosetting resin (B), wherein a phase separation structure of a first phase containing the acrylic polymer (A) and a second phase containing the thermosetting resin (B) is formed, and an average domain size of the second phase is 20 μm or less.

The present invention relates to a resin composition including an acrylic polymer (A) and a thermosetting resin (B), wherein a phase separation structure of a first phase containing the acrylic polymer (A) and a second phase containing the thermosetting resin (B) is formed, and an average domain size of the second phase is 20 μm or less.

A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where W.sub.1 represents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms and containing a heteroatom; W.sub.2 represents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms and not containing a heteroatom; Rf represents a divalent organic group shown by the following general formula; and M.sup.+ represents an onium cation. This provides a resist composition and a patterning process that uses the resist composition that show a particularly favorable mask dimension dependency (mask error factor: MEF), LWR, and critical dimension uniformity (CDU) particularly in photolithography where a high-energy beam such as an ArF excimer laser beam is used as a light source. ##STR00001##

A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where W.sub.1 represents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms and containing a heteroatom; W.sub.2 represents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms and not containing a heteroatom; Rf represents a divalent organic group shown by the following general formula; and M.sup.+ represents an onium cation. This provides a resist composition and a patterning process that uses the resist composition that show a particularly favorable mask dimension dependency (mask error factor: MEF), LWR, and critical dimension uniformity (CDU) particularly in photolithography where a high-energy beam such as an ArF excimer laser beam is used as a light source. ##STR00001##

A resist composition including a compound (D0) represented by general formula (d0) and a polymeric compound (A10) having a structural unit (a0) derived from a compound represented by general formula (a0-1) shown below (in formula (d0), n represents an integer of 2 or more; in formula (a0-1), W.sup.1 represents a polymerizable group-containing group; C.sup.t represents a tertiary carbon atom, and the α-position of C.sup.t is a carbon atom which constitutes a carbon-carbon unsaturated bond; R.sup.11 represents an aromatic hydrocarbon group which may have a substituent, or a chain hydrocarbon group; R.sup.12 and R.sup.13 each independently represents a chain hydrocarbon group, or R.sup.12 and R.sup.13 are mutually bonded to form a cyclic group ##STR00001##

A resist composition including a compound (D0) represented by general formula (d0) and a polymeric compound (A10) having a structural unit (a0) derived from a compound represented by general formula (a0-1) shown below (in formula (d0), n represents an integer of 2 or more; in formula (a0-1), W.sup.1 represents a polymerizable group-containing group; C.sup.t represents a tertiary carbon atom, and the α-position of C.sup.t is a carbon atom which constitutes a carbon-carbon unsaturated bond; R.sup.11 represents an aromatic hydrocarbon group which may have a substituent, or a chain hydrocarbon group; R.sup.12 and R.sup.13 each independently represents a chain hydrocarbon group, or R.sup.12 and R.sup.13 are mutually bonded to form a cyclic group ##STR00001##

A resist composition including a resin component having a constitutional unit derived from a compound represented by General Formula (a01-1) and a constitutional unit derived from a compound represented by General Formula (a02-1), and an acid generator component composed of an anion moiety and a cation moiety. In General Formula (a01-1), W.sup.1 represents a polymerizable group-containing group, C.sup.t represents a tertiary carbon atom, R.sup.11 represents an unsaturated hydrocarbon group which may have a substituent, R.sup.12 and R.sup.13 represent a chain saturated hydrocarbon group which may have a substituent, and a carbon atom at an α-position of C.sup.t constitutes a carbon-carbon unsaturated bond. In General Formula (a02-1), W.sup.2 represents a polymerizable group-containing group, Wa.sup.2 represents an aromatic hydrocarbon group, and n2 represents an integer in a range of 1 to 3 ##STR00001##

A composition for encapsulation of organic light emitting diodes and an organic light emitting diode display apparatus, the composition including photocurable monomers and having a CLD of 50 or more, as calculated by Equation 1:

[00001]$\begin{array}{cc}\mathrm{CLD}=.Math.\frac{M_x\left(N_x-1\right)}{M_{\mathrm{total}}}& \left[\mathrm{Equation}1\right]\end{array}$

wherein, in Equation 1, M.sub.total is a total sum of a number of moles of the photocurable monomers in the composition, M.sub.x is a number of moles of an x.sup.th photocurable monomer in the composition, N.sub.x is a number of photocurable functional groups per mole of the x.sup.th photocurable monomer in the composition, and x is an integer of 1 or more.

A composition for encapsulation of organic light emitting diodes and an organic light emitting diode display apparatus, the composition including photocurable monomers and having a CLD of 50 or more, as calculated by Equation 1:

[00001]$\begin{array}{cc}\mathrm{CLD}=.Math.\frac{M_x\left(N_x-1\right)}{M_{\mathrm{total}}}& \left[\mathrm{Equation}1\right]\end{array}$

wherein, in Equation 1, M.sub.total is a total sum of a number of moles of the photocurable monomers in the composition, M.sub.x is a number of moles of an x.sup.th photocurable monomer in the composition, N.sub.x is a number of photocurable functional groups per mole of the x.sup.th photocurable monomer in the composition, and x is an integer of 1 or more.