Disclosed is an AlNiCo-based hard magnetic particle containing Al, Ni, Co, Cu, Ti, and the balance of Fe. The AlNiCo-based hard magnetic particle contains Co in an amount of 10 to 17 wt %, has a coercive force of 250-450 Oe, and has a residual magnetization/coercive force rate of 0.06 or more. The AlNiCo-based hard magnetic particle according to the present invention can advantageously guarantee magnetic properties suitable for being detected by a magnetic reluctance device due to a low content of Co.

A component for turbomachinery with anti-fouling properties and high resistance to erosion and corrosion.

A method of forming a silver catalyst layer in chemical plating includes providing a substrate; applying a silver-containing solution onto the substrate; and applying energy of activation to the silver-containing solution to form a silver catalyst layer over the substrate. The silver-containing solution includes silver ions, a diamine compound, a carboxylic acid compound, and a solvent. In addition, the substrate having the silver catalyst layer thereon can be immersed into a chemical plating solution to form a metal layer over the silver catalyst layer.

An aqueous electroless nickel plating bath for forming electroless nickel coatings includes nickel, a hypophosphorous reducing agent, zinc, a bismuth stabilizer, and at least one of a complexing agent, a chelating agent, or a pH buffer, and is free of a sulfur compound.

The present disclosure provides electronic device and methods of manufacturing the electronic devices. In some embodiments, the electronic device includes an outer housing at least partially forming an exterior of the electronic device, a trench including at least one valley and at least one peak, a first conductive member, and a coating layer laminated on the outer housing and disposed on the first conductive member. Each of the at least one valley is concave with respect to a surface of the outer housing. Each of the at least one peak is convex with respect to the surface of the outer housing and has a partially removed end. The trench is plated with the first conductive member.

A gas sensor has a microstructure sensing element which comprises a plurality of interconnected units wherein the units are formed of connected graphene tubes. The graphene tubes may be formed by photo-initiating the polymerization of a monomer in a pattern of interconnected units to form a polymer microlattice, removing unpolymerized monomer, coating the polymer microlattice with a metal, removing the polymer microlattice to leave a metal microlattice, depositing graphitic carbon on the metal microlattice, converting the graphitic carbon to graphene, and removing the metal microlattice.

A transistor manufacturing method includes forming a source electrode and a drain electrode on a substrate, forming a layer including an insulator layer to cover the source electrode and the drain electrode, and forming a gate electrode on the layer including the insulator layer, wherein the forming the gate electrode includes forming a plating base film, forming a protection layer of the plating base film, forming a photoresist layer on the protection layer to expose the photoresist layer with desired patterning light, causing the exposed photoresist layer to come into contact with a developer to remove the photoresist layer and the protection layer until the plating base film is uncovered corresponding to the patterning light, and after depositing a metal on the uncovered plating base film, causing an electroless plating solution to come into contact with the plating base film to perform electroless plating.

A method for manufacturing a surge absorbing device is provided. The method includes providing an elongate ceramic tube having a hollow space defined therein and having open and opposite first and second end; forming a first plating layer and a second plating layer on the first end and the second end, respectively; placing a surge absorbing element within the hollow space within the ceramic tube; disposing first and second brazing rings on the first plating layer and the second plating layer, respectively; disposing first and second sealing electrodes on the first and second brazing rings respectively; and melting the first and second brazing rings in an inert gas atmosphere to attach the first and second sealing electrodes onto the first plating layer and the second plating layer, respectively.

A semiconductor device includes a semiconductor part; an electrode selectively provided on the semiconductor part, the electrode being electrically connected to the semiconductor part; and multiple metal layers provided on the electrode. A method of manufacturing the semiconductor device includes selectively forming a first metal layer on the electrode; forming a palladium layer on the first metal layer, the palladium layer covering the first metal layer; forming a second metal layer on the palladium layer, the second metal layer covering the palladium layer; and forming a gold layer directly on the palladium layer by replacing the second metal layer with the gold layer.

A metal resin composite includes a metal substrate, a metal layer formed on a surface of the metal substrate, and a resin layer formed on the metal layer. A plurality of microcracks are formed at a surface of the metal layer.