The present invention is a stainless steel material having antibacterial properties and antiviral properties, the stainless steel material containing a Cu-rich region 3 in which the concentration of Cu is higher than the average Cu concentration in a matrix along grain boundaries in a surface 1 of the stainless steel material and a surface layer 2 located immediately below the surface of the stainless steel material, wherein the Cu-rich region 3 has Cu grain boundary layers 6 that extend continuously at a depth of 10 m to 200 m from the surface 1 of the stainless steel material, the average number of the Cu grain boundary layers 6 is 2.0 or more per 100 m of a distance parallel to the surface of the stainless steel material in a cross section orthogonal to the surface of the stainless steel material.

A method for forming a self-forming barrier in a feature of a substrate is provided, including the following operations: depositing a metallic liner in the feature of the substrate, the metallic liner being deposited over a dielectric of the substrate; depositing a zinc-containing precursor over the metallic liner; performing a thermal soak of the substrate; repeating the depositing of the zinc-containing precursor and the thermal soak of the substrate for a predefined number of cycles; wherein the method forms a zinc-containing barrier layer at an interface between the metallic liner and the dielectric.

A process comprising: (i) coating particles of silicon carbide, silicon nitride, boron carbide or boron nitride with a metal alloy or metal layer; (ii) agglomerating the particles of step (i); thermally spraying the agglomerated metal or metal alloy coated particles onto a substrate to provide a coating thereon.

A laminate including a metallic base material, a nickel-containing plating film layer formed on the metallic base material, and a gold plating film layer formed on the nickel-containing plating film layer, in which pinholes in the gold plating film layer are sealed with a passive film having a thickness of 15 nm or greater. Also disclosed is a constituent member of a semiconductor production device including the laminate and a method for producing the laminate.

A plating method can improve adhesivity with an underlying layer. The plating method of performing a plating process on a substrate includes forming a first plating layer 23a serving as a barrier film on a substrate 2; baking the first plating layer 23a; forming a second plating layer 23b serving as a barrier film; and baking the second plating layer 23b. A plating layer stacked body 23 serving as a barrier film is formed of the first plating layer 23a and the second plating layer 23b.

Provided is a method of producing a plating deposit which enables the production of a plating deposit with good adhesion to a glass substrate. Included is a method of producing a plating deposit, which includes: (1) forming a metal oxide layer on a surface of a glass substrate; (2) performing a first heat treatment after the step (1); (3) forming an electroless copper plating deposit on the metal oxide layer after the step (2); (4) performing a second heat treatment after the step (3); and (5) forming an electrolytic copper plating deposit on the electroless copper plating deposit after the step (4).

The invention provides an inexpensive, scalable process for coating materials with a film of a refractory metal. As an example, the immersion process can comprise the deposition of a sacrificial zinc coating which is galvanically displaced by the ether-mediated reduction of oxophilic WCl.sub.6 to form a complex WO.sub.xCl.sub.y film, and subsequently annealed to crystalline, metallic tungsten. The efficacy of this process was demonstrated on a carbon foam electrode, showing a 50% decrease in electrode resistance and significant gains in electrochemical performance. This process enables voltage efficiency gains for electrodes in batteries, redox flow batteries, and industrial processes where high conductivity and chemical stability are paramount.

A catalyst adsorbed on a surface of a substrate is bound to the substrate without leaving residues within a recess of the substrate. A catalyst layer forming method includes forming a catalyst layer 22 by supplying a catalyst solution 32 onto a substrate 2 having a recess 2a to adsorb the catalyst 22A onto a surface of the substrate and onto an inner surface of the recess; rinsing the surface of the substrate 2 and an inside of the recess 2a by supplying a rinse liquid; drying the surface of the substrate 2 and the inside of the recess 2a. Further, by supplying a binder solution 34 containing a binder 22B onto the substrate 2, the catalyst 22A on the surface of the substrate 2 is bound to the substrate 2 by the binder 22B.

A substrate processing method is provided for performing a plating processing on a substrate having, on a surface thereof, an impurity-doped polysilicon film containing a high concentration of impurities. The substrate processing method includes forming a catalyst layer by supplying, onto the substrate, an alkaline catalyst solution containing a complex of a palladium ion and a monocyclic 5- or 6-membered heterocyclic compound having one or two nitrogen atoms as a heteroatom; and forming a plating layer through electroless plating by supplying a plating liquid onto the substrate after the forming of the catalyst layer.

The present disclosure discloses a preparation method for a silicon/carbon composite anode material and use of thereof. The preparation method includes the following steps: heating a hypercrosslinked polymer in an inert atmosphere for carbonization to obtain a porous carbide; mixing the porous carbide with a silicon-containing solution to obtain a silicon-containing porous carbide suspension; and adding a complexing agent, a metal salt, and a reducing agent to the silicon-containing porous carbide suspension to allow a reaction, and after the reaction is completed, conducting solid-liquid separation to obtain a solid, and heating the solid in an inert atmosphere to obtain the silicon/carbon composite anode material. In the present disclosure, the metal salt is reduced with the reducing agent under an action of the complexing agent through a metal-embedded-into-silicon treatment, such that a metal layer is formed on a silicon layer adsorbed on the porous carbide.