F27D7/02

Finish heat treatment method and finish heat treatment apparatus for iron powder

A finish heat treatment apparatus for an iron powder. Raw iron powder is placed on a continuous moving hearth and continuously charged into the apparatus. In a pretreatment zone, the raw iron powder is subjected to a pretreatment of heating the raw iron powder in an atmosphere of hydrogen gas and/or inert gas at 450 to 1100° C. In decarburization, deoxidation, and denitrification zones, the pretreated iron powder is subsequently subjected to at least two treatments of decarburization, deoxidation, and denitrification. In the pretreatment zone, a hydrogen gas and/or an inert gas serving as a pretreatment ambient gas is introduced separately from an ambient gas used in the at least two treatments is introduced from the upstream side of the pretreatment zone and released from the downstream side so as to flow in the same direction as a moving direction of the moving hearth.

Heat treatment apparatus
09759489 · 2017-09-12 · ·

A heat treatment apparatus includes: a reaction tube processing a plurality of substrates; a support member supporting the reaction tube; a flange protruding outwardly from a lower end of the reaction tube: a concave portion formed in an outer periphery of the flange; and a rotatable roller installed in a top surface of the support member. The rotatable roller engages the concave portion and positions the reaction tube in a circumferential direction.

Heat treatment apparatus
09759489 · 2017-09-12 · ·

A heat treatment apparatus includes: a reaction tube processing a plurality of substrates; a support member supporting the reaction tube; a flange protruding outwardly from a lower end of the reaction tube: a concave portion formed in an outer periphery of the flange; and a rotatable roller installed in a top surface of the support member. The rotatable roller engages the concave portion and positions the reaction tube in a circumferential direction.

SEAL GAS OPTIMIZATION SYSTEMS AND METHODS FOR A DIRECT REDUCTION PROCESS
20210395843 · 2021-12-23 ·

A method and system for operating a seal gas compressor utilized in a direct reduction process including: monitoring a pH level of a water stream used in the seal gas compressor, wherein the pH level of the water stream is affected by a reformer flue gas stream that comes into contact with the water stream, wherein the monitoring step is carried out one or more of upstream of the seal gas compressor and downstream of the compressor; and adjusting the pH level of the water stream to maintain the pH level of the water stream within a predetermined range based on feedback from the monitoring step. The method includes maintaining the pH level of the water stream upstream of the seal gas compressor in a range between 7.5 and 10 and maintaining the pH level of the water stream downstream of the seal gas compressor in a range between 7.8 and 9.5.

Workpiece Processing Apparatus with Thermal Processing Systems
20220208572 · 2022-06-30 ·

A processing apparatus for a thermal treatment of a workpiece is presented. The processing apparatus includes a processing chamber, a workpiece support disposed within the processing chamber, a gas delivery system configured to flow one or more process gases into the processing chamber from the a first side of the processing chamber, one or more radiative heating sources disposed on the second side of the processing chamber, one or more dielectric windows disposed between the workpiece support and the one or more radiative heating sources, a rotation system configured to rotate the one or more radiative heating sources, and a workpiece temperature measurement system configured at a temperature measurement wavelength range to obtain a measurement indicative of a temperature of a back side of the workpiece.

Workpiece Processing Apparatus with Thermal Processing Systems
20220208572 · 2022-06-30 ·

A processing apparatus for a thermal treatment of a workpiece is presented. The processing apparatus includes a processing chamber, a workpiece support disposed within the processing chamber, a gas delivery system configured to flow one or more process gases into the processing chamber from the a first side of the processing chamber, one or more radiative heating sources disposed on the second side of the processing chamber, one or more dielectric windows disposed between the workpiece support and the one or more radiative heating sources, a rotation system configured to rotate the one or more radiative heating sources, and a workpiece temperature measurement system configured at a temperature measurement wavelength range to obtain a measurement indicative of a temperature of a back side of the workpiece.

Air flow controller and manufacturing method of stretched film
11370161 · 2022-06-28 · ·

An air flow controller includes: a box-shaped body cover that is disposed above and/or below a film running surface to be adjacent to an upstream side of an entrance of a tenter oven in a film running direction and/or a downstream side of an exit of the tenter oven in the film running direction, the box-shaped body cover extending in the film running direction and having a surface facing the film running surface and being open. The box-shaped body cover includes at least one partition structural body in the box-shaped body cover, the partition structural body extending in a width direction of the film and separating inside of the box-shaped body cover into a plurality of chambers, and each of at least two of the chambers is provided with an air discharge mechanism configured to discharge air in a corresponding chamber.

SEMICONDUCTOR SUBSTRATE MANUFACTURING DEVICE APPLICABLE TO LARGE-DIAMETER SEMICONDUCTOR SUBSTRATE
20220189798 · 2022-06-16 ·

Provided is a semiconductor substrate manufacturing device which is capable of uniformly heating the surface of a semiconductor substrate that has a relatively large diameter or major axis. The semiconductor substrate manufacturing device includes a container body for accommodating a semiconductor substrate and a heating furnace that has a heating chamber which accommodates the container body, and the heating furnace has a heating source in a direction intersecting the semiconductor substrate to be disposed inside the heating chamber.

SEMICONDUCTOR SUBSTRATE MANUFACTURING DEVICE APPLICABLE TO LARGE-DIAMETER SEMICONDUCTOR SUBSTRATE
20220189798 · 2022-06-16 ·

Provided is a semiconductor substrate manufacturing device which is capable of uniformly heating the surface of a semiconductor substrate that has a relatively large diameter or major axis. The semiconductor substrate manufacturing device includes a container body for accommodating a semiconductor substrate and a heating furnace that has a heating chamber which accommodates the container body, and the heating furnace has a heating source in a direction intersecting the semiconductor substrate to be disposed inside the heating chamber.

METHOD AND SHAFT FURNACE FOR BURNING CARBON-CONTAINING MATERIAL IN A SHAFT FURNACE

A shaft furnace for firing carbonate-containing material may include, in a flow direction of the material, a preheating zone, a firing zone, a cooling zone, and a material outlet for discharging the material from the shaft furnace. Burner lances project into the firing zone. At least one burner lance has a first penetration depth into the firing zone and at least one further burner lance has a second penetration depth into the firing zone that is greater than the first penetration depth. A primary air conduit may be configured to convey combustion air and may be connected to at least one burner lance. An oxygen conduit for conveying oxygen into the firing zone may be arranged such that oxygen flows from the oxygen conduit at least one burner lance having the second penetration depth.