Provided is a fine particle generating apparatus outputting usage information, and in particular, a fine particle generating apparatus that generates fine particles through electrical heating and outputs usage information thereof to a user. Also, provided is a fine particle generating apparatus that generates fine particles by determining whether a puff has occurred according to a temperature variation amount per unit time. Also, provided is a fine particle generating apparatus or an aerosol generating apparatus capable of changing puff conditions by controlling a heater. Also, provided is a fine particle generating apparatus that generates fine particles through electrical heating.

Structures including non-volatile memory elements and methods of forming such structures. The structure includes a first non-volatile memory element, a second non-volatile memory element, and temperature sensing electronics coupled to the first non-volatile memory element and the second non-volatile memory element.

A stretchable sensor is provided. The stretchable sensor includes a first stretchable electrode including a first elastomer and a first conductor dispersed in the first elastomer, a stretchable active layer formed on the first stretchable electrode and including a third elastomer and an ion conductor dispersed in the third elastomer, and a second stretchable electrode formed on the stretchable active layer and including a second elastomer and a second conductor dispersed in the second elastomer. The stretchable sensor is effectively capable of sensing a temperature without being affected by strain and recognizing strain without being affected by temperature.

A flexible passive electronic component includes a substrate, which comprises an insulating layer and optionally an inorganic layer with an upper side and a lower side, whereby the insulating layer at least partially covers the upper side of the optional inorganic layer. The flexible passive electronic component further comprises an electrical structure at least partially covering the insulating layer. The substrate has a thickness, which is at most 500 μm. The flexible passive electronic component has a height, which is at most 150 11 μm.

A flexible passive electronic component includes a substrate, which comprises an insulating layer and optionally an inorganic layer with an upper side and a lower side, whereby the insulating layer at least partially covers the upper side of the optional inorganic layer. The flexible passive electronic component further comprises an electrical structure at least partially covering the insulating layer. The substrate has a thickness, which is at most 500 μm. The flexible passive electronic component has a height, which is at most 150 11 μm.

A device for determining a measurand, includes a first pattern made from a first conductive material, the first pattern having a first impedance and having a first end and a second end spaced apart from the first end, a second pattern at least arranged between the first end and the second end of the first pattern, being in electrical contact with the first pattern. The second pattern has a second impedance that changes continuously as a function of the measurand, such that the impedance or the inductance of the assembly formed by the first and second patterns changes continuously as a function of the measurand. The device also comprises a means for determining the impedance or the inductance of the assembly formed by the first and second patterns.

A semiconductor device includes a semiconductor portion with a first surface at a front side, wherein the semiconductor portion includes an active area, a termination structure laterally surrounding the active area, and a field-free region between the termination structure and a lateral outer surface of the semiconductor portion. The field-free region includes a probe contact region and a main portion. The probe contact region and the main portion form a semiconductor junction. A probe pad on the first surface and the probe contact region form an ohmic contact. A protection passivation layer on the first surface is formed on at least the termination structure and exposes the probe pad.

A semiconductor device includes a semiconductor portion with a first surface at a front side, wherein the semiconductor portion includes an active area, a termination structure laterally surrounding the active area, and a field-free region between the termination structure and a lateral outer surface of the semiconductor portion. The field-free region includes a probe contact region and a main portion. The probe contact region and the main portion form a semiconductor junction. A probe pad on the first surface and the probe contact region form an ohmic contact. A protection passivation layer on the first surface is formed on at least the termination structure and exposes the probe pad.

A sensor assembly for a resistance temperature sensor element includes a substrate and a measuring structure disposed on the substrate. The substrate includes a first material and a stabilized second material. The first material is at least one of aluminum oxide, spinel (magnesium aluminate) and yttrium-aluminum-garnet. The stabilized second material is at least one of stabilized zirconium dioxide and stabilized hafnium dioxide. The stabilized second material is stabilized by containing an oxide of an element having a valence different from four. A coefficient of thermal expansion of the substrate deviates by less than 5% from a coefficient of thermal expansion of the measuring structure.

In an embodiment a sensor element includes at least one carrier having a top side and a bottom side, the top side being electrically insulating, at least one functional layer including a material with a temperature-dependent electrical resistance, the functional layer being arranged on the carrier, at least two electrodes arranged on the carrier at a distance from one another and at least two contact pads configured for electrically contacting the sensor element, wherein a respective contact pad is arranged directly on a partial region of one of the electrodes, wherein the sensor element is configured to measure a temperature, and wherein the sensor element is configured for direct integration into an electrical system as a discrete component.