There is provided a flexure body configured to be used in detection of load applied in first direction and a load applied in second direction orthogonal to the first direction. The flexure body including: a flexure member; and a circuit pattern. The flexure member has a flexure area configured to be strained under load from detection object and an area different from the flexure area. The circuit pattern includes two pieces of first-direction strain sensitive elements, two pieces of second-direction strain sensitive elements, and at least one of a first-direction fixed resistance element and a second-direction fixed resistance element. Two pieces of first-direction strain sensitive elements and two pieces of second-direction strain sensitive elements are provided in the flexure area, and the at least one of the first-direction fixed resistance element and the second-direction fixed resistance element is provided in the area different from the flexure area.

The present invention relates to a half-bridge signal processing circuit comprising a first and a second branch. The first branch comprises a first stimulus responsive sense element and a first current source arranged to provide a current to the first sense element. The second branch comprises a second stimulus responsive sense element and a second current source arranged to provide a current to said second sense element. The first and the second branch have a terminal in common. The first branch comprises a first node between said the current source and the first stimulus responsive sense element configured to generate a first signal related to a voltage over the first sense element. The second branch comprises a second node between the second current source and the second stimulus responsive sense element configured to generate a second signal related to a voltage over the second sense element.

Embodiments described herein are directed to a system having a processor and a bridge circuit. The bridge circuit includes a pair of differential voltage sources, a first pair of sensing elements and a second pair of sensing elements. The first pair of sensing elements generate a pair of measurement signals. The pair of measurement signals are independent of one another and based on the respective sensing element. The second pair of sensing elements communicatively coupled to first pair of sensing elements. The second pair of sensing elements define a first divider. The pair of measurement signals are input into the respective second sensing element of the second pair of sensing elements. The first divider is configured to output a first output signal to the processor. The first output signal is a first differential signal of the first pair of sensing elements.

Embodiments described herein are directed to a system having a processor and a bridge circuit. The bridge circuit includes a pair of differential voltage sources, a first pair of sensing elements and a second pair of sensing elements. The first pair of sensing elements generate a pair of measurement signals. The pair of measurement signals are independent of one another and based on the respective sensing element. The second pair of sensing elements communicatively coupled to first pair of sensing elements. The second pair of sensing elements define a first divider. The pair of measurement signals are input into the respective second sensing element of the second pair of sensing elements. The first divider is configured to output a first output signal to the processor. The first output signal is a first differential signal of the first pair of sensing elements.

An electric current sensor includes a substrate, a first sloped surface, a second sloped surface, at least one conductive wire, a first anisotropic magnetoresistor (AMR) unit, a second AMR unit, a first magnetization direction setting device, and a second magnetization direction setting device. The first sloped surface and the second sloped surface are disposed on the substrate and arranged in a first direction. The at least one conductive wire extends along a second direction and is disposed beside the substrate. The first AMR unit is disposed on the first sloped surface. The second AMR unit is disposed on the second sloped surface. The first magnetization direction setting device and the second magnetization direction setting device are configured to set magnetization directions of the AMR units.

Disclosed is a measuring bridge arrangement containing: a measuring bridge comprising at least one first half bridge having a first measuring connection and a second half bridge having a second measuring connection; a reference voltage divider having at least one first and a second test connection; a differential amplifier having at least one first and a second amplifier input and at least one amplifier output, a voltage amplification, and having an output voltage working range. In the arrangement, the first amplifier input is wired to a first capacitor and the second amplifier input is wired to a second capacitor, and the amplifier inputs can be selectively connected to the measuring connections or to the test connections.

Disclosed is a measuring bridge arrangement containing: a measuring bridge comprising at least one first half bridge having a first measuring connection and a second half bridge having a second measuring connection; a reference voltage divider having at least one first and a second test connection; a differential amplifier having at least one first and a second amplifier input and at least one amplifier output, a voltage amplification, and having an output voltage working range. In the arrangement, the first amplifier input is wired to a first capacitor and the second amplifier input is wired to a second capacitor, and the amplifier inputs can be selectively connected to the measuring connections or to the test connections.

Provided are a detection circuit of a bridge sensor, a chip and a detection system. The detection circuit includes: an alternating current excitation module, and further includes a signal conditioning module, an analog-to-digital conversion module and a processing module connected in sequence. The alternating current excitation module is configured to apply an alternating current excitation signal to the bridge sensor. The signal conditioning module and the analog-to-digital conversion module are configured to sequentially process an output signal of the bridge sensor. The processing module is configured to demodulate the processed output signal and obtain detection information of the bridge sensor according to the demodulated output signal. In embodiments of the present disclosure, a white noise of the system can be greatly suppressed, and a signal-to-noise ratio of the system is improved, thereby improving detection performance of the bridge sensor.

A Wheatstone bridge array comprising a tunneling magnetoresistive (TMR) sensor and a method for manufacturing is disclosed. The bottom lead for the TMR sensor has a very small surface roughness due to not only chemical mechanical planarization (CMP) but also due to forming the bottom lead from multiple layers. The multiple layers include at least a bottom first metal layer and a top second metal layer disposed on the first metal layer. The second metal layer generally has a lower surface roughness than the first metal layer. Additionally, the second metal layer has a slower polishing rate. Therefore, not only does the second metal layer reduce the surface roughness simply be being present, but the slower polishing rate enables the top second metal film to be polished to a very fine surface roughness of less than or equal to 2 Angstroms.

The present disclosure generally relates to a Wheatstone bridge array comprising TMR sensors and a method of fabrication thereof. In the Wheatstone bridge array, there are four distinct TMR sensors. The TMR sensors are all fabricated simultaneously to create four identical TMR sensors that have synthetic antiferromagnetic free layers as the top layer. The synthetic antiferromagnetic free layers comprise a first magnetic layer, a spacer layer, and a second magnetic layer. After forming the four identical TMR sensors, the spacer layer and the second magnetic layer are removed from two TMR sensors. Following the removal of the spacer layer and the second magnetic layer, a new magnetic layer is formed on the now exposed first magnetic layer such that the new magnetic layer has substantially the same thickness as the spacer layer and second magnetic layer combined.