Provided is a power detection circuit for tracking a maximum power point of a solar cell. The power detection circuit includes: an average voltage extracting unit which extracts an average voltage V.sub.PV,LPF from an external voltage V.sub.PV input from an external energy source; a ripple voltage extracting unit which extracts a ripple voltage including current information of the external voltage V.sub.PV from the external voltage V.sub.PV; a voltage-time converter which generates a ramp voltage V.sub.RAMP changing at a predetermined rate and converts the average voltage V.sub.PV,LPF and the ripple voltage into corresponding time information t.sub.1 and t.sub.2 based on the ramp voltage V.sub.RAMP; a time-digital converter which converts the time information t.sub.2 for the ripple voltage into a digital code t.sub.2 [n:0]; and a time multiplier which multiplies the digital code t.sub.2 [n:0] and the time information t.sub.1 for the average voltage V.sub.PV,LPF to output a specific voltage value.

The anomaly detection device according to an embodiment has a calculator and a determiner. The calculator is configured to calculate a degree of anomaly according to a predictive value that is predicted through machine learning using data acquired from a target device and a measurement value that is actually measured for the target device. The determiner is configured to determine whether a change of the degree of anomaly indicates an anomaly of the target device according to a degree of a change of the degree of anomaly calculated by the calculator within a predetermined time range.

The anomaly detection device according to an embodiment has a calculator and a determiner. The calculator is configured to calculate a degree of anomaly according to a predictive value that is predicted through machine learning using data acquired from a target device and a measurement value that is actually measured for the target device. The determiner is configured to determine whether a change of the degree of anomaly indicates an anomaly of the target device according to a degree of a change of the degree of anomaly calculated by the calculator within a predetermined time range.

A method for nondestructive inspection of ceramic structures present as either a ceramic matrix composite structure or a ceramic based coating. Such non-metallic structures are used to provide thermal protection or weight reduction or both to aircraft and their components. The nonmetallic structure is scanned with an electromagnetic pulse in the range of 200 GHz to 4 THz. The electromagnetic pulse includes a plurality of frequencies within the Terahertz range and is not restricted to a single designated frequency. The frequency range is sensitive to changes in impedances and refractive index within the structure. After the electromagnetic pulse passes through the nonmetallic structure, it may be evaluated for changes in impedance in the nonmetallic structure at different locations, and, when present, whether the changes in impedance impact the ability of the structure to perform the function for which it was designed.

A method for nondestructive inspection of ceramic structures present as either a ceramic matrix composite structure or a ceramic based coating. Such non-metallic structures are used to provide thermal protection or weight reduction or both to aircraft and their components. The nonmetallic structure is scanned with an electromagnetic pulse in the range of 200 GHz to 4 THz. The electromagnetic pulse includes a plurality of frequencies within the Terahertz range and is not restricted to a single designated frequency. The frequency range is sensitive to changes in impedances and refractive index within the structure. After the electromagnetic pulse passes through the nonmetallic structure, it may be evaluated for changes in impedance in the nonmetallic structure at different locations, and, when present, whether the changes in impedance impact the ability of the structure to perform the function for which it was designed.

Systems and methods for protecting a device from destructive current flowing through the device, including protecting the device from overload current and short circuit current. Time limiting elements in the system enable rapid response to a destructive current condition to limit the time of the destructive current condition. Maximum current limiting elements in the system enable rapid response to a destructive current condition to limit the maximum current of the destructive current condition.

Systems and methods for protecting a device from destructive current flowing through the device, including protecting the device from overload current and short circuit current. Time limiting elements in the system enable rapid response to a destructive current condition to limit the time of the destructive current condition. Maximum current limiting elements in the system enable rapid response to a destructive current condition to limit the maximum current of the destructive current condition.

A device, includes: a ring waveguide; a diode comprising a junction extending at least partly in the ring waveguide; and a first circuit configured to supply a signal representative of a leakage current in the diode.

A device, includes: a ring waveguide; a diode comprising a junction extending at least partly in the ring waveguide; and a first circuit configured to supply a signal representative of a leakage current in the diode.

A current level extraction method for preventing cutoff is disclosed. The method may include starting a voltage sweep to an interconnection structure at a certain temperature, measuring an initial resistance of the interconnection structure, calculating a measured resistance of the interconnection structure according to a corresponding input voltage, determining whether or not a resistance ratio of the measured resistance of the interconnection structure to the initial resistance is equal to or less than a preset value, updating a current value corresponding to measured resistance to a potential maximum current level and repeating the step of calculating the measured resistance when the resistance ratio of the interconnection structure is equal to or less than the preset value, and setting the current value corresponding to the measured resistance as a maximum current level when the resistance ratio of the interconnection structure is greater than the preset value.