Patent classifications
G03F1/68
Method for forming conductive mesh pattern, and mesh electrode and laminate manufactured thereby
The present invention relates to a method for manufacturing a conductive mesh pattern, a mesh electrode manufactured by the same, and a laminate.
LAYOUT METHOD OF MASK PATTERN, MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE AND EXPOSURE MASK
According to one embodiment, a layout region of a mask pattern is divided into N (N is an integer of 2 or larger) units, a main pattern resolved by exposure light is arranged and sub patterns not resolved by the exposure light are arranged outside the main pattern such that distributions of attenuation amount of the exposure light in the divided layout regions are different.
Method of characterizing, method of forming a model, method of simulating, mask manufacturing method and device manufacturing method
A method of characterizing a lithographic mask type uses a mask having thereon test pattern units of linear features at different orientations. The mask is exposed, rotated by angle, exposed again, rotated by a further angle, exposed, etc. The printed features are measured to determine one or more characteristics of the mask. The method can be used to model shadowing effects of a EUV mask with a thick absorber illuminated at an angle.
Method of characterizing, method of forming a model, method of simulating, mask manufacturing method and device manufacturing method
A method of characterizing a lithographic mask type uses a mask having thereon test pattern units of linear features at different orientations. The mask is exposed, rotated by angle, exposed again, rotated by a further angle, exposed, etc. The printed features are measured to determine one or more characteristics of the mask. The method can be used to model shadowing effects of a EUV mask with a thick absorber illuminated at an angle.
Multi-Tone Amplitude Photomask
A method of fabricating a multi-tone amplitude photomask includes providing a mask substrate. The method includes providing a stepped pattern in at least one layer of material on a surface of the mask substrate. The stepped pattern includes at least two steps and at least three levels. Each level of the stepped pattern provides a different intensity of light when a light source shines light on the stepped pattern.
Highly ordered arrays of micelles or nanoparticles on a substrate surface and methods for producing the same
The invention provides a method for increasing the order of an array of polymeric micelles or of nanoparticles on a substrate surface comprising a) providing an ordered array of micelles or nanoparticles coated with a polymer shell on a substrate surface and b) annealing the array of micelles or nanoparticles by ultrasonication in a liquid medium which is selected from the group comprising H.sub.2O, a polar organic solvent and a mixture of H.sub.2O and a polar organic solvent. In a related aspect, the invention provides the highly ordered arrays of micelles or nanoparticles obtainable by the methods of the invention.
Highly ordered arrays of micelles or nanoparticles on a substrate surface and methods for producing the same
The invention provides a method for increasing the order of an array of polymeric micelles or of nanoparticles on a substrate surface comprising a) providing an ordered array of micelles or nanoparticles coated with a polymer shell on a substrate surface and b) annealing the array of micelles or nanoparticles by ultrasonication in a liquid medium which is selected from the group comprising H.sub.2O, a polar organic solvent and a mixture of H.sub.2O and a polar organic solvent. In a related aspect, the invention provides the highly ordered arrays of micelles or nanoparticles obtainable by the methods of the invention.
Method for preparing halftone phase shift photomask blank
A halftone phase shift film containing Si and N and/or O is deposited on a transparent substrate by reactive sputtering of a Si-containing target with a reactive gas containing N and/or O. One layer is sputter deposited while the reactive gas flow rate is set equal to or lower than the lower limit of the reactive gas flow rate in the hysteresis region, and another layer is sputter deposited while the reactive gas flow rate is set inside the lower and upper limits of the reactive gas flow rate in the hysteresis region. The phase shift film exhibits satisfactory in-plane uniformity of optical properties.
Method for preparing halftone phase shift photomask blank
A halftone phase shift film containing Si and N and/or O is deposited on a transparent substrate by reactive sputtering of a Si-containing target with a reactive gas containing N and/or O. One layer is sputter deposited while the reactive gas flow rate is set equal to or lower than the lower limit of the reactive gas flow rate in the hysteresis region, and another layer is sputter deposited while the reactive gas flow rate is set inside the lower and upper limits of the reactive gas flow rate in the hysteresis region. The phase shift film exhibits satisfactory in-plane uniformity of optical properties.
Method of manufacturing chemical fluid for manufacturing electronic material, pattern forming method, method of manufacturing semiconductor device, chemical fluid for manufacturing electronic material, container, and quality inspection method
In a method of manufacturing a chemical fluid for manufacturing an electronic material, a method of reducing particulate metal in the chemical fluid is selected according to a concentration of particulate metal including an iron atom, a concentration of particulate metal including a copper atom, and a concentration of particulate metal including a zinc atom which are measured by SP ICP-MS in the chemical fluid, and at least one of the concentration of particulate metal including an iron atom, the concentration of particulate metal including a copper atom, or the concentration of particulate metal including a zinc atom is reduced by using the selected reducing method.