G03F7/004

Material for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, patterning process, and compound for forming organic film

An object of the present invention is to provide: a compound containing an imide group which is not only cured under film formation conditions of inert gas as well as air, generates no by-product and has excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but can also form an organic underlayer film with favorable adhesion to a substrate. The present invention provides a material for forming an organic film, including: (A) a compound for forming an organic film shown by the following general formula (1A) or (1B); and (B) an organic solvent, ##STR00001##
noting that in the general formula (1A), when W.sub.1 represents any of ##STR00002##
R.sub.1 does not represent any of ##STR00003##

Resist composition and patterning process

A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where W.sub.1 represents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms and containing a heteroatom; W.sub.2 represents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms and not containing a heteroatom; Rf represents a divalent organic group shown by the following general formula; and M.sup.+ represents an onium cation. This provides a resist composition and a patterning process that uses the resist composition that show a particularly favorable mask dimension dependency (mask error factor: MEF), LWR, and critical dimension uniformity (CDU) particularly in photolithography where a high-energy beam such as an ArF excimer laser beam is used as a light source. ##STR00001##

Resist composition and method of forming resist pattern

A resist composition including a compound (D0) represented by general formula (d0) and a polymeric compound (A10) having a structural unit (a0) derived from a compound represented by general formula (a0-1) shown below (in formula (d0), n represents an integer of 2 or more; in formula (a0-1), W.sup.1 represents a polymerizable group-containing group; C.sup.t represents a tertiary carbon atom, and the α-position of C.sup.t is a carbon atom which constitutes a carbon-carbon unsaturated bond; R.sup.11 represents an aromatic hydrocarbon group which may have a substituent, or a chain hydrocarbon group; R.sup.12 and R.sup.13 each independently represents a chain hydrocarbon group, or R.sup.12 and R.sup.13 are mutually bonded to form a cyclic group ##STR00001##

Resist composition and method of forming resist pattern

A resist composition including a resin component having a constitutional unit derived from a compound represented by General Formula (a01-1) and a constitutional unit derived from a compound represented by General Formula (a02-1), and an acid generator component composed of an anion moiety and a cation moiety. In General Formula (a01-1), W.sup.1 represents a polymerizable group-containing group, C.sup.t represents a tertiary carbon atom, R.sup.11 represents an unsaturated hydrocarbon group which may have a substituent, R.sup.12 and R.sup.13 represent a chain saturated hydrocarbon group which may have a substituent, and a carbon atom at an α-position of C.sup.t constitutes a carbon-carbon unsaturated bond. In General Formula (a02-1), W.sup.2 represents a polymerizable group-containing group, Wa.sup.2 represents an aromatic hydrocarbon group, and n2 represents an integer in a range of 1 to 3 ##STR00001##

Photoacid generator, photoresist composition including the same, and method of preparing the photoacid generator

Disclosed are a photoacid generator, a photoresist composition including the same, and a method of preparing the photoacid generator. The photoacid generator may include a compound represented by Formula 1: ##STR00001##
wherein, in Formula 1, CY, A1, A2, and B are respectively described in the specification.

Lithographic printing plate precursor and method for producing lithographic printing plate

A lithographic printing plate precursor has an image-recording layer on a hydrophilic support, in which the image-recording layer contains an infrared absorbing dye that decomposes by exposure to an infrared ray and a color developer that develops color due to the exposure to an infrared ray. A method for producing a lithographic printing plate includes image-exposing the lithographic printing plate precursor using an infrared laser.

Thin film circuit substrate and manufacturing method thereof
11543748 · 2023-01-03 · ·

Disclosed is a thin film circuit substrate and a manufacturing method thereof, which are capable of forming a pattern having a feature size of less than 10 μm by forming a seed layer and a plating layer on a base substrate and then forming, through electrospinning, a photoresist layer having a thickness in a set range. The disclosed thin film circuit substrate comprises: a base substrate; a thin film seed layer formed on the top surface of the base substrate; a metal layer formed on the top surface of the thin film seed layer; and a photoresist layer formed on the top surface of the metal layer, wherein the thickness of the photoresist layer is in a range of 1 μm to 5 μm.

Thin film circuit substrate and manufacturing method thereof
11543748 · 2023-01-03 · ·

Disclosed is a thin film circuit substrate and a manufacturing method thereof, which are capable of forming a pattern having a feature size of less than 10 μm by forming a seed layer and a plating layer on a base substrate and then forming, through electrospinning, a photoresist layer having a thickness in a set range. The disclosed thin film circuit substrate comprises: a base substrate; a thin film seed layer formed on the top surface of the base substrate; a metal layer formed on the top surface of the thin film seed layer; and a photoresist layer formed on the top surface of the metal layer, wherein the thickness of the photoresist layer is in a range of 1 μm to 5 μm.

CROSSLINKABLE ELECTROACTIVE FLUOROPOLYMERS COMPRISING PHOTOACTIVE GROUPS

A copolymer including fluorinated units of formula (I):


—CX.sub.1X.sub.2—CX.sub.3X.sub.4—  (I)

in which each of the X.sub.1, X.sub.2, X.sub.3 and X.sub.4 is independently chosen from H, F and alkyl groups including from 1 to 3 carbon atoms which are optionally partially or totally fluorinated; and fluorinated units of formula (II):


—CX.sub.5X.sub.6—CX.sub.7Z—  (II)

in which each of the X.sub.5, X.sub.6 and X.sub.7 is independently chosen from H, F and alkyl groups including from 1 to 3 carbon atoms which are optionally partially or totally fluorinated, and in which Z is a photoactive group of formula —Y—Ar—R, Y representing an oxygen atom or an NH group or a sulfur atom, Ar representing an aryl group, and R being a monodentate or bidentate group including from 1 to 30 carbon atoms. Also, a process for preparing this copolymer, a composition including this copolymer, and a film obtained from this copolymer.

SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN

Disclosed are a salt represented by formula (I), an acid generator, and a resist composition comprising the same:

##STR00001##

wherein R.sup.1 and R.sup.2 each represent a hydroxy group, *—O—R.sup.10, *—O-L.sup.10-CO—O—R.sup.10; L.sup.10 represents an alkanediyl group; R.sup.10 represents an acid-labile group; R.sup.4, R.sup.5, R.sup.7 and R.sup.8 each represent a halogen atom, a haloalkyl group or a hydrocarbon group; A.sup.1 and A.sup.2 each represent a hydrocarbon group, the hydrocarbon group may have a substituent, and —CH.sub.2— included in the hydrocarbon group may be replaced by —O—, —CO—, —S— or —SO.sub.2—; m1 represents an integer of 1 to 5, m2 and m8 represent an integer of 0 to 5, m4, m5 and m7 represent an integer of 0 to 4, 1≤m1+m7≤5, 0≤m2+m8≤5; and AI.sup.− represents an organic anion.