New Te-zwitterion compounds are provided, including photoactive tellurium salt compounds useful for Extreme Ultraviolet Lithography.

A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of a carboxylic acid having an iodized or brominated aromatic ring exhibits a high sensitivity, high resolution, low edge roughness (LER, LWR) and small size variation, and forms a pattern of good profile after exposure and development.

A radiation-sensitive resin composition contains: a polymer that includes a structural unit including an acid-labile group; and a radiation-sensitive acid generating agent. The radiation-sensitive acid generating agent includes a sulfonate anion and a radiation-sensitive cation. The sulfonate anion includes two or more rings, and an iodine atom and a monovalent group having 0 to 10 carbon atoms which includes at least one of an oxygen atom and a nitrogen atom bond to at least one of the two or more rings. The ring is preferably an aromatic ring. The radiation-sensitive acid generating agent is preferably a compound represented by formula (1). In the formula (1), A.sup.1 represents a group obtained from a compound which includes a ring having 3 to 20 ring atoms by removing (p+q+r+1) hydrogen atoms on the ring. ##STR00001##

A photoresist material, a method of fabricating the same, and a color filter substrate are described. The photoresist material has an oligomer segment having a chemical structural formula of: ##STR00001##
wherein a value of n is 1 to 2.

A salt represented by formula (I): ##STR00001##
wherein R.sup.1 and R.sup.2 each independently represent a hydroxy group, —O—R.sup.10, —O—CO—O—R.sup.10 or —O-L.sup.1-CO—O—R.sup.10; L.sup.1 represents an alkanediyl group having 1 to 6 carbon atoms; R.sup.4, R.sup.5, R.sup.7 and R.sup.8 each independently represent a halogen atom, an alkyl fluoride group having 1 to 12 carbon atoms or a hydrocarbon group having 1 to 18 carbon atoms, the hydrocarbon group may have a substituent, and —CH.sub.2— included in the hydrocarbon group may be replaced by —O—, —CO—, —S— or —SO.sub.2—; R.sup.10 represents an acid-labile group; X.sup.1 and X.sup.2 each independently represent an oxygen atom or a sulfur atom; m1 represents an integer of 1 to 5, m2 and m8 represent an integer of 0 to 5, m4, m5 and m7 represent an integer of 0 to 4; and AI.sup.− represents an organic anion.

Organometallic solutions have been found to provide high resolution radiation based patterning using thin coatings. The patterning can involve irradiation of the coated surface with a selected pattern and developing the pattern with a developing agent to form the developed image. The patternable coatings may be susceptible to positive-tone patterning or negative-tone patterning based on the use of an organic developing agent or an aqueous acid or base developing agent. The radiation sensitive coatings can comprise a metal oxo/hydroxo network with organic ligands. A precursor solution can comprise an organic liquid and metal polynuclear oxo-hydroxo cations with organic ligands having metal carbon bonds and/or metal carboxylate bonds.

The present invention relates to resist compositions comprising (A) a polymer component, (B) a photoacid generator component, (C) a photoactive diazonaphthoquinone component, and (D) a solvent. The polymer component comprises a mixture of a Novolak derivative and a polymer comprising hydroxystyrene repeat units. The polymer component comprises repeat units with free phenolic hydroxy moieties and repeat units with phenolic hydroxy moieties protected with an acid cleavable acetal moiety. The positive photoresist composition is suitable for manufacturing electronic devices.

It is an object of the present invention to provide a method of forming a high-contrast fine pattern onto a resist film. The present invention relates to a pattern forming method, comprising; applying a resist material onto a substrate to form a resist film, introducing a metal into the resist film, exposing, and developing. In addition, the present invention also relates to a resist material and a pattern forming apparatus.

The present disclosure relates to a patterning structure having a radiation-absorbing layer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the radiation-absorbing layer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.

Novel photoresist developing compositions including a deprotonation agent, such as a nitrogen containing organic base capable of deprotonating a surface of portions of a photoresist layer exposed to radiation.