Disclosed herein is a sense amplifier. In one aspect, the sense amplifier includes a first pair of cross-coupled transistors and a second pair of cross-coupled transistors coupled to a first port and a second port of the sense amplifier. In one aspect, the sense amplifier includes a first access transistor coupled between a first input line and the first port. In one aspect, the sense amplifier includes a second access transistor coupled between a second input line and the second port. In one aspect, the first pair of cross-coupled transistors includes a first transistor and a second transistor cross-coupled with each other. In one aspect, a source electrode of the first transistor is directly coupled to the first input line, and a source electrode of the second transistor is directly coupled to the second input line.

Disclosed herein is a sense amplifier. In one aspect, the sense amplifier includes a first pair of cross-coupled transistors and a second pair of cross-coupled transistors coupled to a first port and a second port of the sense amplifier. In one aspect, the sense amplifier includes a first access transistor coupled between a first input line and the first port. In one aspect, the sense amplifier includes a second access transistor coupled between a second input line and the second port. In one aspect, the first pair of cross-coupled transistors includes a first transistor and a second transistor cross-coupled with each other. In one aspect, a source electrode of the first transistor is directly coupled to the first input line, and a source electrode of the second transistor is directly coupled to the second input line.

The present disclosure relates to the field of semiconductor circuit design, and in particular to a readout circuit layout structure and a method of reading data. The readout circuit layout structure includes: a first readout circuit structure and a second readout circuit structure having identical structures, wherein the first readout circuit structure and the second readout circuit structure each include: a first isolation module, configured to be turned on according to a first isolation signal, electrically connect a bit line and a first readout bit line, and electrically connect a complementary bit line and a first complementary readout bit line; a second isolation module, configured to be turned on according to a second isolation signal, electrically connect the first readout bit line and a second readout bit line, and electrically connect the first complementary readout bit line and a second complementary readout bit line.

The present disclosure relates to the field of semiconductor circuit design, and in particular to a readout circuit layout structure and a method of reading data. The readout circuit layout structure includes: a first readout circuit structure and a second readout circuit structure having identical structures, wherein the first readout circuit structure and the second readout circuit structure each include: a first isolation module, configured to be turned on according to a first isolation signal, electrically connect a bit line and a first readout bit line, and electrically connect a complementary bit line and a first complementary readout bit line; a second isolation module, configured to be turned on according to a second isolation signal, electrically connect the first readout bit line and a second readout bit line, and electrically connect the first complementary readout bit line and a second complementary readout bit line.

Devices and methods for sensing a memory cell are described. The memory cell may include a ferroelectric memory cell. During a read operation, a first switching component may selectively couple a sense component with the memory cell based on a logic state stored on the memory cell to transfer a charge between the memory cell and the sense component. A second switching component, which may be coupled with the first switching component, may down convert a voltage associated with the charge to another voltage that is within an operation voltage of the sense component. The sense component may operate at a lower voltage than a voltage at which the memory cell operates to reduce power consumption in some cases.

An improved sensing circuit is disclosed that utilizes a bit line in an unused memory array to provide reference values to compare against selected cells in another memory array. A circuit that can perform a self-test for identifying bit lines with leakage currents about an acceptable threshold also is disclosed.

An improved sensing circuit is disclosed that utilizes a bit line in an unused memory array to provide reference values to compare against selected cells in another memory array. A circuit that can perform a self-test for identifying bit lines with leakage currents about an acceptable threshold also is disclosed.

The present disclosure includes apparatuses and methods related to performing logical operations using sensing circuitry. An example apparatus comprises an array of memory cells and sensing circuitry coupled to the array. The sensing circuitry can include a sense amplifier coupled to a pair of complementary sense lines and a compute component coupled to the sense amplifier via pass gates coupled to logical operation selection logic. The logical operation selection logic can be configured to control pass gates based on a selected logical operation.

A system for dual mode operation having power saving and active modes in a stacked circuit topology having logic preservation is provided. The system includes a pre-charge circuit and a sleep mode control circuit for providing a signal to disable a plurality of circuit elements and switching a mode of the system, the sleep mode control circuit being coupled to the pre-charge circuit and further being coupled to a logic function circuit, wherein the plurality of circuit elements comprise logic gates and transistor devices. The system also includes a keeper circuit coupled to the global bitline, and the logic function circuit coupled to a solar bitline, wherein the logic function circuit preserves a state of the solar bitline, the state of the global bitline determines the state of the solar bitline. The system includes an effective pull-up transistor coupled to the sleep mode control circuit and the logic function circuit.

A system for dual mode operation having power saving and active modes in a stacked circuit topology having logic preservation is provided. The system includes a pre-charge circuit and a sleep mode control circuit for providing a signal to disable a plurality of circuit elements and switching a mode of the system, the sleep mode control circuit being coupled to the pre-charge circuit and further being coupled to a logic function circuit, wherein the plurality of circuit elements comprise logic gates and transistor devices. The system also includes a keeper circuit coupled to the global bitline, and the logic function circuit coupled to a solar bitline, wherein the logic function circuit preserves a state of the solar bitline, the state of the global bitline determines the state of the solar bitline. The system includes an effective pull-up transistor coupled to the sleep mode control circuit and the logic function circuit.