The present disclosure relates to measuring misalignment between layers of a semiconductor device. In one embodiment, a device includes a first conductive layer; a second conductive layer; one or more first electrodes embedded in the first conductive layer; one or more second electrodes embedded in the second conductive layer; a sensing circuit connected to the one or more first electrodes; and a plurality of time-varying signal sources connected to the one or more second electrodes, wherein the one or more first electrodes and the one or more second electrodes form at least a portion of a bridge structure that exhibits an electrical property that varies as a function of misalignment of the first conductive layer and the second conductive layer in an in-plane direction.

The present disclosure relates to measuring misalignment between layers of a semiconductor device. In one embodiment, a device includes a first conductive layer; a second conductive layer; one or more first electrodes embedded in the first conductive layer; one or more second electrodes embedded in the second conductive layer; a sensing circuit connected to the one or more first electrodes; and a plurality of time-varying signal sources connected to the one or more second electrodes, wherein the one or more first electrodes and the one or more second electrodes form at least a portion of a bridge structure that exhibits an electrical property that varies as a function of misalignment of the first conductive layer and the second conductive layer in an in-plane direction.

A magnetic field measuring method includes: a first radial-magnetic-field measuring using a magnetic field measuring element placed at an offset position apart from the coil axis, to thereby measure, at the offset position, first radial magnetic fields along an offset axis parallel to the coil axis; a second radial-magnetic-field measuring using the magnetic field measuring element after being rotated by a set angle, to thereby measure, at the offset position, second radial magnetic fields along the offset axis; and a center-position determining the inter-coil center position, based on a first radial-magnetic-field characteristic that is a characteristic in a direction of the offset axis of the first radial magnetic fields, and a second radial-magnetic-field characteristic that is a characteristic in the direction of the offset axis of the second radial magnetic fields.

A magnetic field measuring method includes: a first radial-magnetic-field measuring using a magnetic field measuring element placed at an offset position apart from the coil axis, to thereby measure, at the offset position, first radial magnetic fields along an offset axis parallel to the coil axis; a second radial-magnetic-field measuring using the magnetic field measuring element after being rotated by a set angle, to thereby measure, at the offset position, second radial magnetic fields along the offset axis; and a center-position determining the inter-coil center position, based on a first radial-magnetic-field characteristic that is a characteristic in a direction of the offset axis of the first radial magnetic fields, and a second radial-magnetic-field characteristic that is a characteristic in the direction of the offset axis of the second radial magnetic fields.

The present disclosure relates to measuring misalignment between layers of a semiconductor device. In one embodiment, a device includes a first conductive layer; a second conductive layer; one or more first electrodes embedded in the first conductive layer; one or more second electrodes embedded in the second conductive layer; a sensing circuit connected to the one or more first electrodes; and a plurality of time-varying signal sources connected to the one or more second electrodes, wherein the one or more first electrodes and the one or more second electrodes form at least a portion of a bridge structure that exhibits an electrical property that varies as a function of misalignment of the first conductive layer and the second conductive layer in an in-plane direction.

The present disclosure relates to measuring misalignment between layers of a semiconductor device. In one embodiment, a device includes a first conductive layer; a second conductive layer; one or more first electrodes embedded in the first conductive layer; one or more second electrodes embedded in the second conductive layer; a sensing circuit connected to the one or more first electrodes; and a plurality of time-varying signal sources connected to the one or more second electrodes, wherein the one or more first electrodes and the one or more second electrodes form at least a portion of a bridge structure that exhibits an electrical property that varies as a function of misalignment of the first conductive layer and the second conductive layer in an in-plane direction.

The present invention relates to systems and methods for measuring misalignment between layers of a semiconductor device. In one embodiment, a method includes applying an input voltage to respective ones of one or more first electrodes associated with a first conductive layer of a semiconductor device; sensing an electrical property of one or more second electrodes associated with a second conductive layer of the semiconductor device in response to applying the input voltage to the respective ones of the one or more first electrodes; and calculating a misalignment between the first conductive layer of the semiconductor device and the second conductive layer of the semiconductor device in an in-plane direction as a function of the electrical property of the one or more second electrodes.

The present invention relates to systems and methods for measuring misalignment between layers of a semiconductor device. In one embodiment, a method includes applying an input voltage to respective ones of one or more first electrodes associated with a first conductive layer of a semiconductor device; sensing an electrical property of one or more second electrodes associated with a second conductive layer of the semiconductor device in response to applying the input voltage to the respective ones of the one or more first electrodes; and calculating a misalignment between the first conductive layer of the semiconductor device and the second conductive layer of the semiconductor device in an in-plane direction as a function of the electrical property of the one or more second electrodes.

A rotation angle detection system comprises a magnet arranged to rotate around a rotation axis. A first magnetic detection circuit defines a first surface provided with a first and second pairs of magnetic detection elements. A signal processing unit is configured to output a signal representative of a rotation angle of the magnet based on outputs of the first and second pair of magnetic detection elements. A second magnetic detection circuit is provided with another first and second pairs of magnetic detection elements. The signal processing unit is configured to output a redundant signal corresponding to a rotation angle of the magnet based on outputs of the other first pair of magnetic detection elements and the other second pair of magnetic detection elements.

A rotation angle detection system comprises a magnet arranged to rotate around a rotation axis. A first magnetic detection circuit defines a first surface provided with a first and second pairs of magnetic detection elements. A signal processing unit is configured to output a signal representative of a rotation angle of the magnet based on outputs of the first and second pair of magnetic detection elements. A second magnetic detection circuit is provided with another first and second pairs of magnetic detection elements. The signal processing unit is configured to output a redundant signal corresponding to a rotation angle of the magnet based on outputs of the other first pair of magnetic detection elements and the other second pair of magnetic detection elements.