A self-contained metrology wafer carrier systems and methods of measuring one or more characteristics of semiconductor wafers are provided. A wafer carrier system includes, for instance, a housing configured for transport within the automated material handling system, the housing having a support configured to support a semiconductor wafer in the housing, and a metrology system disposed within the housing, the metrology system operable to measure at least one characteristic of the wafer, the metrology system comprising a sensing unit and a computing unit operably connected to the sensing unit. Also provided are methods of measuring one or more characteristics of a semiconductor wafer within the wafer carrier systems of the present disclosure.

Methods and systems of heating a substrate in a vacuum deposition process include a resistive heater having a resistive heating element. Radiative heat emitted from the resistive heating element has a wavelength in a mid-infrared band from 5 μm to 40 μm that corresponds to a phonon absorption band of the substrate. The substrate comprises a wide bandgap semiconducting material and has an uncoated surface and a deposition surface opposite the uncoated surface. The resistive heater and the substrate are positioned in a vacuum deposition chamber. The uncoated surface of the substrate is spaced apart from and faces the resistive heater. The uncoated surface of the substrate is directly heated by absorbing the radiative heat.

A semiconductor product comprising: a semiconductor substrate and a test structure, the test structure comprising: a thermopile and at least one temperature sensitive element, the at least one temperature sensitive element being located in the substrate, or between the substrate and the thermopile.

Embodiments disclosed herein generally relate to a substrate temperature monitoring system in a substrate support assembly. In one embodiment, the substrate support assembly includes a support plate and a substrate temperature monitoring system. The support plate has a top surface configured to support a substrate. The substrate temperature monitoring system is disposed in the substrate support plate. The substrate temperature monitoring system is configured to measure a temperature of the substrate from a bottom surface of the substrate. The substrate temperature monitoring system includes a window, a body, and a temperature sensor. The window is integrally formed in a top surface of the support plate. The body is embedded in the support plate, through the bottom surface. The body defines an interior passage. The temperature sensor is disposed in the interior passage beneath the window. The temperature sensor is configured to measure the temperature of the substrate.

The present invention downsizes a radiation thermometer and increases a circuit scale, and includes: an infrared sensor; a signal processing unit that processes a signal of the infrared sensor; and a casing that accommodates the infrared sensor and the signal processing unit, in which the signal processing unit is configured by stacking a plurality of substrates with a spacer interposed therebetween.

An improved system for measuring the temperature of a plurality of workpieces in a rotating semiconductor processing device is disclosed. Because silicon has variable emissivity in the infrared band, a temperature stable, high emissivity coating is applied to a portion of the workpiece, allowing the temperature of the workpiece to be measured by observing the temperature of the coating. Further, by limiting the amount of coating applied to the workpiece, the effect of the coating on the intrinsic temperature of the workpiece and the surrounding semiconductor processing device may be minimized. The temperature of the workpieces is measured as the workpieces pass under an aperture by capturing a thermal image of a portion of the workpiece. In certain embodiments, a controller is used to process the plurality of thermal images into a single thermal image showing all of the workpieces disposed within the semiconductor processing device.

A method and apparatus for calibrating a temperature within a processing chamber are described. The method includes determining an etch rate of a layer within the processing chamber. The processing chamber is a deposition chamber configured for use during semiconductor manufacturing. The etch rate is utilized to determine a temperature within the processing chamber. The temperature within the processing chamber is then subsequently compared to a calibrated temperature to determine a temperature offset. The etch rate is determined using any one of a pyrometer, a reflectometer, a camera, or a mass sensor.

An apparatus and a method for determining the temperature of a substrate, in particular of a semiconductor substrate during the heating thereof by means of at least one first radiation source are disclosed. A determination of the temperature is based on detecting first and second radiations, each comprising radiation emitted by the substrate due to its own temperature and radiation emitted by the first radiation, which is reflected at the substrate and at least one of a drive power of the first radiation source and the radiation intensity of the first radiation source.

Apparatuses and methods for measuring substrate temperature are provided. In one or more embodiments, an apparatus for estimating a temperature is provided and includes a plurality of electromagnetic radiation sources positioned to emit electromagnetic radiation toward a reflection plane, and a plurality of electromagnetic radiation detectors. Each electromagnetic radiation detector is positioned to sample the electromagnetic radiation emitted by a corresponding electromagnetic radiation source of the plurality of electromagnetic radiation sources. The apparatus also includes a pyrometer positioned to receive electromagnetic radiation emitted by plurality of electromagnetic radiation sources and reflected from a substrate disposed at a reflection plane and electromagnetic radiation emitted by the substrate. The apparatus includes a processor configured to estimate a temperature of the substrate based on the electromagnetic radiation emitted by the substrate. Methods of estimating temperature are also provided.

A control device for monitoring a functioning of a semiconductor component during its operation may comprise an input interface configured for receiving a sensor signal corresponding to a contact-less determined temperature distribution on a surface of the semiconductor component, and an evaluation device configured to determine, based on the sensor signal, whether the temperature distribution fulfills a predefined decision criterion corresponding to an operation of the semiconductor component outside a normal operating state. An output interface is designed to issue an emergency signal when the decision criterion is fulfilled, wherein the emergency signal triggers the execution of an emergency measure.