A system and a method capable of identifying a heat source position corresponding to a failure portion are provided. An analysis system according to the present invention is an analysis system that identifies a heat source position inside a semiconductor device, and includes a tester that applies an AC signal to the semiconductor device, an infrared camera that detects light from the semiconductor device according to the AC signal and outputs a detection signal, and a data analysis unit that identifies the heat source position based on the detection signal.

A semiconductor wafer mass metrology method comprising: controlling the temperature of a semiconductor wafer by: detecting information relating to the temperature of the semiconductor wafer; and controlling cooling or heating of the semiconductor wafer based on the detected information relating to the temperature of the semiconductor wafer; wherein controlling the cooling or heating of the semiconductor wafer comprises controlling a duration of the cooling or heating of the semiconductor wafer; and subsequently loading the semiconductor wafer onto a measurement area of a semiconductor wafer mass metrology apparatus.

An apparatus for measuring surface temperature of a substrate being illuminated by a pulsed light beam configured to heat the substrate and by a beam of probing light, wherein the heated substrate emits a radiated beam of thermal radiation, wherein the apparatus includes an optical system configured to collect the radiated beam and a reflected beam of probing light propagating in substantially close directions, wherein the collected radiated beam and the collected reflected beam are separately routed to a respective detector via a respective routing element, the respective detectors being configured to measure the intensity of the collected radiated beam and collected reflected beam simultaneously and at the same wavelength, wherein the surface temperature is calculated based on the collected radiated beam and on the collected reflected beam.

A method and apparatus for calibration non-contact temperature sensors within a process chamber are described herein. The calibration of the non-contact temperature sensors includes the utilization of a band edge detector to determine the band edge absorption wavelength of a substrate. The band edge detector is configured to measure the intensity of a range of wavelengths and determines the actual temperature of a substrate based off the band edge absorption wavelength and the material of the substrate. The calibration method is automated and does not require human intervention or disassembly of a process chamber for each calibration.

Embodiments disclosed herein provide an RTP system for processing a substrate. An RTP chamber has a radiation source configured to deliver radiation to a substrate disposed within a processing volume. One or more pyrometers are coupled to the chamber body opposite the radiation source. In one example, the radiation source is disposed below the substrate and the pyrometers are disposed above the substrate. In another example, the radiation source is disposed above the substrate and the pyrometers are disposed below the substrate. The substrate may be supported in varying manners configured to reduce physical contact between the substrate support and the substrate. An edge ring and shield are disposed within the processing volume and are configured to reduce or eliminate background radiation from interfering with the pyrometers. Additionally, an absorbing surface may be coupled to the chamber body to further reduce background radiation interference.

According to the various examples, a fully integrated system and method for failure analysis using RF-based thermometry enable the detection and location of defects and failures in complex semiconductor packaging architectures. The system provides synchronous amplified RF signals to generate unique thermal signatures at defect locations based on dielectric relaxation loss and heating.

A substrate holder holds a substrate at a predetermined position. An etching solution supply unit supplies an etching solution to the substrate at the predetermined position. A rotating unit rotates the substrate holder about a predetermined rotation axis. A temperature distribution acquisition unit acquires the temperature distribution in a peripheral area around the substrate area occupied by the substrate when the substrate is arranged at the predetermined position in a chamber. A feature value calculator calculates, from the temperature distribution, a feature value relating an etching amount of the substrate by the etching using the etching solution.

The invention relates to a method and to a device for the in-situ determination of the temperature ϑ of a sample, in particular to a method and to a device for the surface-corrected determination of the temperature ϑ of a sample by means of the band-edge method.

It is provided that, for the in-situ determination of the temperature ϑ of a sample (10) when growing a layer stack (12) in a deposition system, a surface-corrected transmission spectrum T′(λ) is calculated by determining the quotient of the transmission spectrum T(λ) and a correction function K(λ), the correction function K(λ) being calculated from a determined reflection spectrum R(λ). Subsequently, the spectral position of the band-edge λ.sub.BE is determined from the transmission spectrum T′(λ), and the temperature ϑ is determined from the spectral position of the band-edge λ.sub.BE by means of a known dependency ϑ(λ.sub.BE).

A processing apparatus for a thermal treatment of a workpiece is presented. The processing apparatus includes a processing chamber, a workpiece support disposed within the processing chamber, a gas delivery system configured to flow one or more process gases into the processing chamber from the a first side of the processing chamber, one or more radiative heating sources disposed on the second side of the processing chamber, one or more dielectric windows disposed between the workpiece support and the one or more radiative heating sources, a rotation system configured to rotate the one or more radiative heating sources, and a workpiece temperature measurement system configured at a temperature measurement wavelength range to obtain a measurement indicative of a temperature of a back side of the workpiece.

Disclosed herein is an apparatus for adjusting the installation location of a temperature sensor configured to measure the surface temperature of a wafer in a semiconductor wafer cleaning apparatus. The apparatus includes: a bracket which is disposed in the upper end of the side wall of each of multi-station processing chambers (MPCs); a first fastening member which fastens a cable; a second fastening member which fastens a temperature sensor; a location adjustment member which fastens and supports the temperature sensor; the temperature sensor which is fixedly coupled to an end of the location adjustment member; a jig which includes a location adjustment plate and a control substrate, and which adjusts the detection location of the temperature sensor; and a controller which is provided with a wafer surface monitoring system configured to separate the surface temperature into a plurality of channels and to display the surface temperature.