FPAs on a wafer can be tested prior to dicing the wafer into individual dies. A focal plane array (FPA) can comprise an array of photodetectors, such as microbolometers, on a semiconductor substrate or die. FPAs can be manufactured on a wafer to make multiple FPAs on a single wafer that can be later diced or divided into individual FPAs. Prior to dicing the wafer, the FPAs can be tested electrically and radiometrically in bulk to characterize individual FPAs, to identify bad pixels, to identify bad chips, to calibrate individual FPAs, and the like. These test results can be used to determine acceptable FPAs and can be used to provide initial settings for imaging systems with the tested and integrated FPA.

An infrared sensor according to an embodiment includes a housing, a detector, a lid, and a light shielding film. The detector is mounted on the bottom surface of the housing and includes a heat-sensitive pixel region and a reference pixel region. The lid seals the housing and includes a support member and a window member. The support member is bonded to the side surfaces of the housing and has an opening positioned above the heat-sensitive pixel region. The window member is bonded to a surface of the support member on a side of the detector so as to cover the opening. The light shielding film is formed on a surface of the window member on a side of the detector and arranged on an optical path of the infrared rays entering the reference pixel region.

A radiation detector includes a substrate and a membrane suspended above the substrate by spacers, wherein the spacers electrically contact a radiation sensor formed in the membrane and thermally insulate the membrane from the substrate.

A radiation detector includes a substrate and a membrane suspended above the substrate by spacers, wherein the spacers electrically contact a radiation sensor formed in the membrane and thermally insulate the membrane from the substrate.

A light detector includes: a substrate; and a membrane which is supported on a surface of the substrate so that a space is formed between the surface of the substrate and the membrane, in which the membrane includes a first wiring layer and a second wiring layer which are opposite each other with a gap extending along a line having a curved portion interposed therebetween and a resistance layer which is electrically connected to each of the first wiring layer and the second wiring layer and has an electric resistance depending on a temperature, and in which a first edge portion at the side of the line in the first wiring layer and a second edge portion at the side of the line in the second wiring layer respectively continuously extend.

An imager integrated circuit intended to cooperate with an optical system configured to direct light rays from a scene to an inlet face of the circuit, the circuit being configured to perform a simultaneous stereoscopic capture of N images corresponding to N distinct views of the scene, each of the N images corresponding to light rays directed by a portion of the optical system which is different from those directing the rays corresponding to the N−1 other images, including: N subsets of pixels made on a same substrate, each of the N subsets of pixels being intended to perform the capture of one of the N associated images, means interposed between each of the N subsets of pixels and the inlet face of the circuit, and configured to pass the rays corresponding to the image associated with said subset of pixels and block the other rays.

A laser beam from a laser optical system is incident onto a semiconductor wafer. Thermal radiation light from the semiconductor wafer is incident onto an infrared detector. The infrared detector outputs a signal based on the intensity of the thermal radiation light. A processing device calculates a sheet resistance of the semiconductor wafer that is annealed by the laser beam on the basis of an output value of the infrared detector, and outputs a calculation value of the sheet resistance to an output device.

A multi-pixel terahertz transceiver is constructed using a stack of semiconductor layers that communicate using vias defined within the semiconductor layers. By using a stack of semiconductor layers, the various electrical functions of each layer can be tested easily without having to assemble the entire transceiver. In addition, the design allows the production of a transceiver having pixels set 10 mm apart.

A multi-pixel terahertz transceiver is constructed using a stack of semiconductor layers that communicate using vias defined within the semiconductor layers. By using a stack of semiconductor layers, the various electrical functions of each layer can be tested easily without having to assemble the entire transceiver. In addition, the design allows the production of a transceiver having pixels set 10 mm apart.

An infrared detector is provided, and the infrared detector includes: a thermoelectric element; an infrared light absorber, located on and in contact with the thermoelectric element, and configured to absorb infrared light and convert infrared light into heat; an electrical signal detector, electrically connected to the thermoelectric element and configured to detect a change in electrical performance of the thermoelectric element; wherein the infrared light absorber includes a carbon nanotube array, the carbon nanotube array includes a plurality of carbon nanotubes, a height of the plurality of carbon nanotubes are substantially the same, and the plurality of carbon nanotubes are perpendicular to the thermoelectric element.