An infrared detector is provided, and the infrared detector includes: a thermoelectric element; an infrared light absorber, located on and in contact with the thermoelectric element, and configured to absorb infrared light and convert infrared light into heat; an electrical signal detector, electrically connected to the thermoelectric element and configured to detect a change in electrical performance of the thermoelectric element; wherein the infrared light absorber includes a carbon nanotube array, the carbon nanotube array includes a plurality of carbon nanotubes, a height of the plurality of carbon nanotubes are substantially the same, and the plurality of carbon nanotubes are perpendicular to the thermoelectric element.

Techniques are disclosed for systems and methods to provide reliable analyte spatial detection systems. An analyte spatial detection system includes an imaging module, a visible light projector, associated processing and control electronics, and, optionally, orientation and/or position sensors integrated with the imaging module and/or the visible light projector. The imaging module includes sensor elements configured to detect electromagnetic radiation in one or more selected spectrums, such as infrared, visible light, and/or other spectrums. The visible light projector includes one or more types of projectors configured project visible light within a spatial volume monitored by the imaging module. The system may be partially or completely portable and/or fixed in place. The visible light projector is used to indicate presence of a detected analyte on a surface near or adjoining the spatial position of the detected analyte.

A bolometric detector of LWIR wavelengths, including: a substrate; a membrane suspended above the substrate by supporting elements; an absorbing element comprising several MIM structures each formed with a lower metal element, an upper metal element specific to each MIM structure and with a dielectric element positioned between the lower and upper metal elements; a thermometric element comprising at least one thermometric material; wherein: the membrane includes the upper metal element, the thermometric material and one portion of the dielectric element of each MIM structure, the upper metal elements of at least two MIM structure have different dimensions relatively to each other in the main plane of the membrane, and the dielectric element of each of the MIM structures includes at least one of the following materials having vibrational modes in the LWIR range: Al.sub.2O.sub.3, AlN, TiO.sub.2.

A bolometric detector of LWIR wavelengths, including: a substrate; a membrane suspended above the substrate by supporting elements; an absorbing element comprising several MIM structures each formed with a lower metal element, an upper metal element specific to each MIM structure and with a dielectric element positioned between the lower and upper metal elements; a thermometric element comprising at least one thermometric material; wherein: the membrane includes the upper metal element, the thermometric material and one portion of the dielectric element of each MIM structure, the upper metal elements of at least two MIM structure have different dimensions relatively to each other in the main plane of the membrane, and the dielectric element of each of the MIM structures includes at least one of the following materials having vibrational modes in the LWIR range: Al.sub.2O.sub.3, AlN, TiO.sub.2.

A thermistor element includes a thermistor film, a first electrode provided in contact with one surface of the thermistor film, and a pair of second electrodes provided in contact with the other surface of the thermistor film, wherein the thermistor film includes an oxide having a spinel crystal structure and having a [111] preferred orientation in a film thickness direction.

A thermistor element includes a thermistor film, a first electrode provided in contact with one surface of the thermistor film, and a pair of second electrodes provided in contact with the other surface of the thermistor film, wherein the thermistor film includes an oxide having a spinel crystal structure and having a [111] preferred orientation in a film thickness direction.

A microbolometer may include a sensitive material based on vanadium oxide (VO.sub.x) with an additional chemical element such as boron (B), but excluding nitrogen (N), the sensitive material wherein the sensitive material (i) is amorphous, (ii) has an electrical resistivity at ambient temperature in a range of from 1 to 30 Ω.Math.cm, (ii) has a homogeneous chemical composition, and (iv) has an amount of boron, defined as a ratio of a number of boron to vanadium atoms to that of vanadium, at least equal to 0.086.

A microbolometer may include a sensitive material based on vanadium oxide (VO.sub.x) with an additional chemical element such as boron (B), but excluding nitrogen (N), the sensitive material wherein the sensitive material (i) is amorphous, (ii) has an electrical resistivity at ambient temperature in a range of from 1 to 30 Ω.Math.cm, (ii) has a homogeneous chemical composition, and (iv) has an amount of boron, defined as a ratio of a number of boron to vanadium atoms to that of vanadium, at least equal to 0.086.

A method for determining a chance to enable a zeroing of gas analysis is disclosed herein. The method includes emitting radiation, and receiving emitted radiation, the received radiation comprising a first wavelength range absorbed by the at least one desired gas component and one or more disturbing factor, and a second wavelength range absorbed by the disturbing factor, the first wavelength range differing from the second wavelength range. The method also includes providing to a processing unit a first signal data indicative of a concentration of the at least one desired gas component and absorption of the disturbing factor, and a second signal data indicative of absorption of the disturbing factor. The method also includes determining a stability of the first and second signal data as a function of time, and if they are substantially stable enabling the zeroing to improve a measurement accuracy.

A photodetector comprising a photoabsorber, comprising a doped semiconductor, a contact layer comprising a doped semiconductor and a barrier layer comprising a charge carrier compensated semiconductor, the barrier layer compensated by doping impurities such that it exhibits a valence band energy level substantially equal to the valence band energy level of the photo absorbing layer and a conduction band energy level exhibiting a significant band gap in relation to the conduction band of the photo absorbing layer, the barrier layer disposed between the photoabsorber and contact layers. The relationship between the photo absorbing layer and contact layer valence and conduction band energies and the barrier layer conduction and valance band energies is selected to facilitate minority carrier current flow while inhibiting majority carrier current flow between the contact and photo absorbing layers.