A temperature sensor includes two branches, each branch having at least a first transistor and a second transistor connected as diodes and cascaded, so that an emitter of the first transistor is connected to a collector of the second transistor of the same branch. The temperature source also includes a current source configured to provide a current to the two branches, and an analog-to-digital convertor. The analog-to-digital convertor is connected to capture a voltage between emitters of the first transistors or of the second transistors, and is configured to convert said voltage to a digital temperature signal.

Absolute temperature measurements of integrated photonic devices can be accomplished with integrated bandgap temperature sensors located adjacent the photonic devices. In various embodiments, the temperature of the active region within a diode structure of a photonic device is measured with an integrated bandgap temperature sensor that includes one or more diode junctions either in the semiconductor device layer beneath the active region or laterally adjacent to the photonic device, or in a diode structure formed above the semiconductor device layer and adjacent the diode structure of the photonic device.

A semiconductor device includes a storage chip and a temperature sensor for detecting the temperature of the storage chip, the temperature sensor and the storage chip being powered by different power supplies. The storage chip and the temperature sensor can use different power supplies. As such, the activations of both of them can be controlled separately, i.e., the activation of the temperature sensor is free from whether a storage chip is activated, so that the detection of the temperature of the storage chip is not affected by whether a storage chip is activated, thereby providing a reference for the activation and operation of the storage chip, and in turn avoiding the activation or operation of the storage chip under low temperatures and improving the stability of the storage chip.

A temperature detection circuit includes a first current path and a second current path. The first current path includes a first transistor with a control terminal coupled to receive a reference voltage and includes a temperature sensing device. The second current path includes a second transistor with a control terminal coupled to a node of the first current path. The second current path includes a node that provides an indication of a detected temperature.

A circuit includes a temperature-sensitive voltage divider. The temperature-sensitive voltage divider includes a temperature-sensitive resistor and a second resistor having a first terminal coupled to a first terminal of the temperature-sensitive resistor. A temperature signal is generated at a first node coupled to the first terminal of the temperature-sensitive resistor. Detection logic is coupled to the first node to generate a detection signal responsive to the temperature signal.

A semiconductor device that can detect temperature appropriately is provided. A semiconductor device provided with a semiconductor substrate in which one or more transistor portions and one or more diode portions are provided is provided, including: a temperature detecting portion provided above the top surface of the semiconductor substrate and having a longitudinal side in a predetermined longitudinal direction; a top surface electrode provided above the top surface of the semiconductor substrate; and one or more external lines that have a connecting part connected with the top surface electrode and electrically connect the top surface electrode to a circuit outside the semiconductor device. The temperature detecting portion extends across the one or more transistor portions and the one or more diode portions in the longitudinal direction, and the connecting part of at least one of the external lines is arranged around the temperature detecting portion when seen from above.

A semiconductor device is provided that includes a temperature sensing function that accurately senses a temperature. The semiconductor device includes a first semiconductor layer on a semiconductor substrate, and a temperature sensor. The temperature sensor includes: a sensing-body region of a second conductivity type that is disposed in the first semiconductor layer; a first region of a first conductivity type, and a second region of the first conductivity type that are arranged in the sensing-body region and are apart from each other; and a third region of the second conductivity type that is in the sensing-body region and is between the first region and the second region. A concentration of a first conductivity type impurity in the temperature-sensing conductive layer is higher than a concentration of a first conductivity type impurity in the drift region.

Circuits for providing overcurrent and overvoltage protection are disclosed herein. The circuits feature a depletion mode MOSFET (D MOSFET) as a current limiter, the D MOSFET being connected to a bi-metallic switch, where the bi-metallic switch acts as a temperature sensing circuit breaker. In combination, the D MOSFET and bi-metallic switch are able to limit current to downstream circuit components, thus protecting the components from damage.

The present disclosure relates to a temperature sensor circuit for measuring temperature change inside a pixel of a high-brightness active matrix micro-light-emitting diode (micro-LED) display, and a display apparatus including the temperature sensor circuit. The temperature sensor circuit according to one embodiment of the present disclosure includes a first thin film transistor, a second thin film transistor interconnected with the first thin film transistor, and a temperature measurement unit for measuring temperature based on an output voltage according to difference in off current between the first thin film transistor and the second thin film transistor.

An example device includes a first temperature sensor configured to provide a first current signal indicative of a temperature of a first circuit based on a voltage of a first temperature sensing element. The first circuit includes a power switch device and the first temperature sensing element. A second temperature sensor is configured to provide a second current signal indicative of temperature of a second circuit based on a voltage of a second temperature sensing element. The second circuit includes the second temperature sensing element. A trim circuit is configured to trim current in at least one of the first temperature sensor or the second temperature sensor to compensate for mismatch between temperature coefficients of the first and second temperature sensing elements.