A system for determining a signature frequency of a photonic device includes a reference cell that receives a first light beam of a plurality of light beams. Based on a predetermined characteristic of the reference cell, the reference cell produces a first identifiable output indicative of a reference frequency in response to light in the first light beam having a particular frequency. A photonic device receives a second light beam of the plurality of light beams, and produces a second identifiable output in response to light in the second light beam having a frequency at the signature frequency. A computing device uses electrical signals representative of the first and second identifiable outputs to determine the signature frequency of the photonic device. A light source may emit a light beam having a controlled change of frequency and an optical splitter splits the light beam to produce the plurality of light beams.

A system for determining a signature frequency of a photonic device includes a reference cell that receives a first light beam of a plurality of light beams. Based on a predetermined characteristic of the reference cell, the reference cell produces a first identifiable output indicative of a reference frequency in response to light in the first light beam having a particular frequency. A photonic device receives a second light beam of the plurality of light beams, and produces a second identifiable output in response to light in the second light beam having a frequency at the signature frequency. A computing device uses electrical signals representative of the first and second identifiable outputs to determine the signature frequency of the photonic device. A light source may emit a light beam having a controlled change of frequency and an optical splitter splits the light beam to produce the plurality of light beams.

Provided are a sensor package and a sensor package module. The sensor package includes: a substrate including a sensing area; a terminal portion disposed on a side of the sensing area of the substrate and including at least one terminal connected to the outside; a first outer wall disposed on the substrate and including a main wall surrounding at least some outer portions of the sensing area; at least one wire patterned and disposed on the substrate and configured to connect the sensing area and the terminal portion to each other; and a cover disposed on the first outer wall to correspond to the sensing area. Part of the main wall is disposed between the sensing area and the terminal portion, and the main wall includes an opening through which the at least one wire passes.

A method of measurement of the acting forces and/or the temperature in at least one region of a structure. The method includes an addition step in which at least one element is added to the structure, the addition generating a local vibration mode of the assembly formed by the structure and the added elements in each measurement region. The method also includes a step of analysis of the assembly, an excitation step of the assembly and a measurement step in which the variations produced in the resonance frequency of the assembly associated with the local vibration mode of each measurement region are measured. The method also includes a calculation step in which the acting forces and/or the temperature of the structure in the measurement region is determined based on the measured variation produced in the resonance frequency associated with the local vibration mode.

A method of measurement of the acting forces and/or the temperature in at least one region of a structure. The method includes an addition step in which at least one element is added to the structure, the addition generating a local vibration mode of the assembly formed by the structure and the added elements in each measurement region. The method also includes a step of analysis of the assembly, an excitation step of the assembly and a measurement step in which the variations produced in the resonance frequency of the assembly associated with the local vibration mode of each measurement region are measured. The method also includes a calculation step in which the acting forces and/or the temperature of the structure in the measurement region is determined based on the measured variation produced in the resonance frequency associated with the local vibration mode.

A sensor assembly that includes a surface acoustic wave (SAW) sensor. The SAW sensor is adapted to measure a first environmental condition in response to receiving an RF signal. The SAW sensor includes a substrate having a layer of piezoelectric material. The SAW sensor further includes a interdigitated transducer (IDT) formed on the piezoelectric material. The IDT includes two comb-shaped electrodes having interlocking conducting digits in a first arrangement. The interlocking conducting digits in the first arrangement generates a first signal modulation of an RF signal received by the first IDT. The first signal modulation identifies the first SAW sensor.

A sensor device comprises at least one transducer and a sensing material disposed on the transducer. The sensing material adsorbs or absorbs an amount of analyte (e.g., a target gas) that depends on a temperature of the sensing material and a concentration of the analyte. At least one detector is arranged to measure responses of the transducer to sorption or desorption of the analyte in the sensing material while the sensing material is heated and/or cooled according to at least one temperature profile. The device also comprises a humidity sensor that is arranged to detect a humidity level of the environment or sample containing the analyte. A processor or controller is programmed to determine the quantity (e.g., concentration) of the analyte by comparing values of the transducer measurement signals to reference data indicative of expected or pre-measured responses of the transducer to known concentrations of the analyte at the same humidity level as indicated by the humidity sensor while the sensing material is subjected to the same or similar temperature profile.

A sensor device comprises at least one transducer and a sensing material disposed on the transducer. The sensing material adsorbs or absorbs an amount of analyte (e.g., a target gas) that depends on a temperature of the sensing material and a concentration of the analyte. At least one detector is arranged to measure responses of the transducer to sorption or desorption of the analyte in the sensing material while the sensing material is heated and/or cooled according to at least one temperature profile. The device also comprises a humidity sensor that is arranged to detect a humidity level of the environment or sample containing the analyte. A processor or controller is programmed to determine the quantity (e.g., concentration) of the analyte by comparing values of the transducer measurement signals to reference data indicative of expected or pre-measured responses of the transducer to known concentrations of the analyte at the same humidity level as indicated by the humidity sensor while the sensing material is subjected to the same or similar temperature profile.

A microprobe is provided that includes a microsphere optical resonator operatively coupled to a nanoscatterer. The microsphere optical resonator includes a back surface and a front surface opposite the front surface. The front surface is configured to receive a focused laser beam, and the nanoscatterer is positioned adjacent to the back surface.

A microprobe is provided that includes a microsphere optical resonator operatively coupled to a nanoscatterer. The microsphere optical resonator includes a back surface and a front surface opposite the front surface. The front surface is configured to receive a focused laser beam, and the nanoscatterer is positioned adjacent to the back surface.