A substance detection system and a substance detection method are provided. The temperature identifying portion identifies a surface temperature of the quartz substrate, based on a difference between a deviation of the fundamental wave frequency from at least any predetermined reference fundamental wave frequency of the reference crystal resonator and the detecting crystal resonator and a deviation of the third harmonic frequency from a predetermined reference third harmonic frequency. The substance identifying portion identifies a temperature at which a contaminant attached to the detecting crystal resonator is desorbed from the detecting crystal resonator to identify the contaminant based on the temperature at which the contaminant is desorbed. The temperature is identified based on a difference between the fundamental wave frequency of the reference crystal resonator and the fundamental wave frequency of the detecting crystal resonator measured by the frequency measuring portion and the temperature identified by the temperature identifying portion.

A substance detection system and a substance detection method are provided. The temperature identifying portion identifies a surface temperature of the quartz substrate, based on a difference between a deviation of the fundamental wave frequency from at least any predetermined reference fundamental wave frequency of the reference crystal resonator and the detecting crystal resonator and a deviation of the third harmonic frequency from a predetermined reference third harmonic frequency. The substance identifying portion identifies a temperature at which a contaminant attached to the detecting crystal resonator is desorbed from the detecting crystal resonator to identify the contaminant based on the temperature at which the contaminant is desorbed. The temperature is identified based on a difference between the fundamental wave frequency of the reference crystal resonator and the fundamental wave frequency of the detecting crystal resonator measured by the frequency measuring portion and the temperature identified by the temperature identifying portion.

Disclosed is a method for detecting a value which represents the temperature of a vibrating element of an ultrasonic transducer. The ultrasonic transducer has a resonant frequency (f.sub.r). The method comprises the steps of operating the ultrasonic transducer with an electric measuring signal at a measuring frequency (f.sub.m) which is above the resonant frequency, and of detecting the absolute value of the complex impedance of the ultrasonic transducer at this measuring frequency (f.sub.m) and, building thereon, ascertaining the desired value, which is to represent the temperature of a vibrating element of an ultrasonic transducer, as a function of the detected absolute value of the complex impedance of the ultrasonic transducer at this measuring frequency (f.sub.m).

Disclosed is a method for detecting a value which represents the temperature of a vibrating element of an ultrasonic transducer. The ultrasonic transducer has a resonant frequency (f.sub.r). The method comprises the steps of operating the ultrasonic transducer with an electric measuring signal at a measuring frequency (f.sub.m) which is above the resonant frequency, and of detecting the absolute value of the complex impedance of the ultrasonic transducer at this measuring frequency (f.sub.m) and, building thereon, ascertaining the desired value, which is to represent the temperature of a vibrating element of an ultrasonic transducer, as a function of the detected absolute value of the complex impedance of the ultrasonic transducer at this measuring frequency (f.sub.m).

The present invention is a passive sensor to detect ionizing radiation over time. It employs a SAW sensor that incorporates a polymer film that deforms based on the chain-scission reaction as described upon irradiation. The polymer film coats the piezoelectric substrate and reflectors on the SAW sensor and, as it reacts to radiation, the film deforms due to the fracturing of the polymer molecules resulting in a loss of overall mass. As the SAW sensor is interrogated by an electrical signal, the wavelength of the response will change as the overall rigidity of the polymer film changes allowing for the detection of the level of radiation.

A system includes a sensor comprising a sensor bonding layer disposed on a surface of the sensor, wherein the sensor bonding layer is a metallic alloy. An inlay includes a planar outer surface, wherein the inlay may be disposed on a curved surface of a structure. A structure bonding layer may be disposed on the planar outer surface of the inlay, wherein the structure bonding layer is a metallic alloy. The sensor bonding layer is coupled to the structure bonding layer via a metallic joint, and the sensor is configured to sense data of the structure through the metallic joint, the structure bonding layer, and the sensor bonding layer. The inlay comprises at least one of a modulus of elasticity, a shape, a thickness, and a size configured to reduce strain transmitted to the sensor.

An arrangement is disclosed for measuring an environment parameter at a rotor of a rotary machine; according to some embodiments, the parameter to be measured is temperature and the machine to monitor is a turbomachine. The arrangement includes at least: a SAW or BAW device electrically coupled with an antenna, a parameter-sensitive impedance device, and two identical cables electrically coupling the SAW or BAW device respectively with the impedance device and a short-circuit or an open-circuit or a matching impedance device. The SAW or BAW device is located in a first zone of the rotor, while the parameter-sensitive impedance device is located in a second zone of the rotor remote from the first zone of the rotor. An interrogator can obtain environment parameter values by sending RF signals to the SAW or BAW device through the antenna.

An apparatus and method for real-time sensing of properties in industrial manufacturing equipment are described. The sensing system includes first plural sensors mounted within a processing environment of a semiconductor device manufacturing system, wherein each sensor is assigned to a different region to monitor a physical or chemical property of the assigned region of the manufacturing system, and a reader system having componentry configured to simultaneously and wirelessly interrogate the plural sensors. The reader system uses a single high frequency interrogation sequence that includes (1) transmitting a first request pulse signal to the first plural sensors, the first request pulse signal being associated with a first frequency band, and (2) receiving uniquely identifiable response signals from the first plural sensors that provide real-time monitoring of variations in the physical or chemical property at each assigned region of the system.

A system includes a structure bonding layer and a sensor. The structure bonding layer is disposed on a structure. The structure bonding layer is a metallic alloy. The sensor includes a non-metallic wafer and a sensor bonding layer disposed on a surface of the non-metallic wafer. The sensor bonding layer is a metallic alloy. The sensor bonding layer is coupled to the structure bonding layer via a metallic joint, and the sensor is configured to sense data of the structure through the metallic joint, the structure bonding layer, and the sensor bonding layer.

Provided are an optical sensor device using surface acoustic waves and an optical sensor device package. The optical sensor device includes: a substrate including a first light sensing area and a temperature sensing area and including a piezo electric material; a first input electrode and a first output electrode which are disposed in the first light sensing area and are apart from each other with a first delay gap therebetween; a first sensing film overlapping the first delay gap and configured to cover at least some portions of the first input electrode and the first output electrode; and a second input electrode and a second output electrode which are disposed in the temperature sensing area and are apart from each other with a second delay gap therebetween. The second delay gap is exposed to air.