To measure an effect of a wavelength-dependent measuring light reflectivity R.sub.Ret of a lithography mask, a measuring light beam is caused to impinge on said lithography mask within a field of view of a measuring apparatus. The measuring light has a wavelength bandwidth between a wavelength lower limit and a wavelength upper limit differing therefrom. The reflected measuring light emanating from an impinged section of the lithography mask is captured by a detector. A filter with a wavelength-dependent transmission within the wavelength bandwidth is introduced into a beam path of the measuring light beam between the measuring light source and the detector. The measuring light reflected by the lithography mask is captured again by the detector once the filter has been introduced. The wavelength-dependent reflectivity R.sub.Ret or an effect of the wavelength-dependent reflectivity R.sub.Ret is determined on the basis of the capture results. In comparison with the prior art, this yields an improved method for measuring an effect of a measuring light reflectivity on a lithography mask. Additionally, a method for measuring an effect of a polarization of measuring light on a measuring light impingement on a lithography mask is specified, wherein as a result of this the effect of the lithography mask on measuring light is made accessible in respect of further optical parameters of a measurement.

To measure an effect of a wavelength-dependent measuring light reflectivity R.sub.Ret of a lithography mask, a measuring light beam is caused to impinge on said lithography mask within a field of view of a measuring apparatus. The measuring light has a wavelength bandwidth between a wavelength lower limit and a wavelength upper limit differing therefrom. The reflected measuring light emanating from an impinged section of the lithography mask is captured by a detector. A filter with a wavelength-dependent transmission within the wavelength bandwidth is introduced into a beam path of the measuring light beam between the measuring light source and the detector. The measuring light reflected by the lithography mask is captured again by the detector once the filter has been introduced. The wavelength-dependent reflectivity R.sub.Ret or an effect of the wavelength-dependent reflectivity R.sub.Ret is determined on the basis of the capture results. In comparison with the prior art, this yields an improved method for measuring an effect of a measuring light reflectivity on a lithography mask. Additionally, a method for measuring an effect of a polarization of measuring light on a measuring light impingement on a lithography mask is specified, wherein as a result of this the effect of the lithography mask on measuring light is made accessible in respect of further optical parameters of a measurement.

Implementations disclosed describe an optical inspection device comprising a source of light to direct a light beam to a location on a surface of a wafer, the wafer being transported from a processing chamber, wherein the light beam is to generate, a reflected light, an optical sensor to collect a first data representative of a direction of the first reflected light, collect a second data representative of a plurality of values characterizing intensity of the reflected light at a corresponding one of a plurality of wavelengths, and a processing device, in communication with the optical sensor, to determine, using the first data, a position of the surface of the wafer; retrieve calibration data, and determine, using the position of the surface of the wafer, the second data, and the calibration data, a characteristic representative of a quality of the wafer.

The present invention relates to the field of biochemical detection, and in particular to a reading apparatus for reading an assay result on a testing element. The reading apparatus comprises a first light-emitting element, a first photodetector and a light blocking element, wherein the first light-emitting element emits light and illuminates one or more corresponding areas of the testing element, the first photodetector receives light from one or more corresponding areas of the testing element, and the light blocking element guides a path of light emitted from a light emitting element and/or from a testing element. The light blocking element separates photodetectors in separate spaces, including a first light blocking element and a second light blocking element, wherein the first light blocking element is located between the first light-emitting element and the first photodetector, to guide the light emitted from the light emitting element to illuminate the testing element. The reading apparatus of the present invention allows light from a specific area of the testing element to be received by the photodetector and blocks invalid light from unrelated areas from entering the photodetector, thereby enhancing the accuracy and sensitivity of detection.

The present invention relates to the field of biochemical detection, and in particular to a reading apparatus for reading an assay result on a testing element. The reading apparatus comprises a first light-emitting element, a first photodetector and a light blocking element, wherein the first light-emitting element emits light and illuminates one or more corresponding areas of the testing element, the first photodetector receives light from one or more corresponding areas of the testing element, and the light blocking element guides a path of light emitted from a light emitting element and/or from a testing element. The light blocking element separates photodetectors in separate spaces, including a first light blocking element and a second light blocking element, wherein the first light blocking element is located between the first light-emitting element and the first photodetector, to guide the light emitted from the light emitting element to illuminate the testing element. The reading apparatus of the present invention allows light from a specific area of the testing element to be received by the photodetector and blocks invalid light from unrelated areas from entering the photodetector, thereby enhancing the accuracy and sensitivity of detection.

A testing device and method thereof verifies performance of a non-invasive physiological information detecting device. The testing device incorporates a first layer to modulate one or more electromagnetic signals, e.g., light, emitted from the non-invasive physiological information detecting device in a first predetermined manner and a second layer to process the electromagnetic signal from the first layer such that the modulated signal received at the physiological information detecting device simulates a change in the electromagnetic signal during a real detecting process. In one embodiment, the second layer modulates one or more electromagnetic signals from the first layer in a second predetermined manner, wherein at least one of the first and second layers modulates one kind of the electromagnetic signals. In another embodiment, the first layer scatters different kinds of electromagnetic signals with different scattering ratios, and the second layer absorbs the electromagnetic signals passing through the first layer.

A testing device and method thereof verifies performance of a non-invasive physiological information detecting device. The testing device incorporates a first layer to modulate one or more electromagnetic signals, e.g., light, emitted from the non-invasive physiological information detecting device in a first predetermined manner and a second layer to process the electromagnetic signal from the first layer such that the modulated signal received at the physiological information detecting device simulates a change in the electromagnetic signal during a real detecting process. In one embodiment, the second layer modulates one or more electromagnetic signals from the first layer in a second predetermined manner, wherein at least one of the first and second layers modulates one kind of the electromagnetic signals. In another embodiment, the first layer scatters different kinds of electromagnetic signals with different scattering ratios, and the second layer absorbs the electromagnetic signals passing through the first layer.

According to the embodiment, an optical inspection method for a surface state of a subject includes acquiring and discriminating. The acquiring includes acquiring a color vector of a color corresponding to a wavelength spectrum in a color coordinate system of n dimensions (n is a natural number equal to or larger than 1), which is equal to or smaller than a number of a plurality of color channels of pixels of an image sensor, with optical imaging using a wavelength spectrum selection portion that selectively allows a plurality of wavelength spectra different from one another from a surface of the subject to pass. The discriminating includes discriminating the surface state of the subject based on a direction of the color vector in the color coordinate system.

A measurement method for a vertical cavity surface emitting laser diode (VCSEL) and an epitaxial wafer test fixture are provided, especially the Fabry-Perot Etalon of the bottom-emitting VCSEL can be measured. When the Fabry-Perot Etalon of the bottom-emitting VCSEL is measured by a measurement apparatus, a light of the test light source of the measurement apparatus is incident from the substrate surface of the VCSEL epitaxial wafer such that the Fabry-Perot Etalon of the bottom-emitting VCSEL is acquired. Through the VCSEL epitaxial wafer test fixture, the bottom-emitting VCSEL can be directly measured by the existing measurement apparatus such that there is no need to change the optical design of the measurement apparatus, and it can prevent the VCSEL epitaxial wafer from being scratched or contaminated.

A measurement method for a vertical cavity surface emitting laser diode (VCSEL) and an epitaxial wafer test fixture are provided, especially the Fabry-Perot Etalon of the bottom-emitting VCSEL can be measured. When the Fabry-Perot Etalon of the bottom-emitting VCSEL is measured by a measurement apparatus, a light of the test light source of the measurement apparatus is incident from the substrate surface of the VCSEL epitaxial wafer such that the Fabry-Perot Etalon of the bottom-emitting VCSEL is acquired. Through the VCSEL epitaxial wafer test fixture, the bottom-emitting VCSEL can be directly measured by the existing measurement apparatus such that there is no need to change the optical design of the measurement apparatus, and it can prevent the VCSEL epitaxial wafer from being scratched or contaminated.