A sequential X-ray fluorescence spectrometer according to the present invention includes a total analysis time display unit configured to measure, for each kind of analytical sample, a standard sample which contains a component at a known content as a standard value to determine a measured intensity of each measurement line corresponding to the component. The total analysis time display unit is further configured to calculate, for each component, a counting time which gives a specified analytical precision by using the standard value and the measured intensity and to calculate a total counting time as a sum of the counting times of respective components. The total analysis time display unit is configured to calculate a total analysis time as a sum of the total counting time and a total non-counting time and to output the calculated total analysis time and the calculated counting times of the respective components.

The present invention relates to a method of automatically determining a measurement recipe for a feature, such as a dimension of a pattern formed on a workpiece, such as a wafer, a mask, a panel, or a substrate. This method includes: determining a type of a CAD pattern (101) and a measurement recipe based on a relative position of a measurement point (111) and the CAD pattern (101) on a coordinate system defined in design data, and an area of the CAD pattern (101); aligning a real pattern (121) on an image corresponding to the CAD pattern (101) with the CAD pattern (101); and measuring a feature of the real pattern (121) according to the determined measurement recipe.

To provide an inspection device capable of imaging a transmission image while changing relative positions of a radiation source, an inspection object, and a detector. An inspection device comprises a radiation generator, a substrate holding unit for holding an inspection object, a detector, a substrate holding unit driving unit and a detector driving unit, a substrate position detection unit and a detector position detection unit, and a control unit, wherein the control unit executes a step for causing the detector to start acquiring an image while the relative positions of the radiation generator, the substrate holding unit and the detector are changing, a step for acquiring information relating to the positions of the substrate holding unit and the detector when the detector starts acquiring an image, and a step for storing the image acquired by the detector and the information relating to the position in association with each other.

A computer-implemented method for processing volumetric scanning data comprises obtaining volumetric scanning data of a structural element, the structural element comprising a plurality of instances of two or more types of components. The volumetric scanning data is represented by a plurality of voxels. The method comprises assigning the plurality of voxels to one of the two or more different types of components identifying, for each type of component, the voxels that are part of a surface of an instance of the component. The method comprises extracting the surfaces of the instances of the components using the voxels that are part of the surface of the respective type of component. The method comprises determining information on a structural integrity of the structural element based on the extracted surfaces.

The invention relates to an industrial X-ray workpiece measuring system comprising an X-ray source (4), which is arranged in an X-ray protective housing (2) and has an X-ray focal spot (3), workpiece carrier means, which are arranged in the X-ray protective housing, for accommodating a non-medical workpiece (5) to be examined, and X-ray detector means (10a, 10b, 10c) which are provided on and/or in the X-ray protective housing, are designed to detect an X-ray beam from the X-ray source, which X-ray beam penetrates the workpiece held on the workpiece carrier means, and downstream of which X-ray detector means electronic evaluating means can be connected.

Methods and systems for performing overlay and edge placement errors of device structures based on x-ray diffraction measurement data are presented. Overlay error between different layers of a metrology target is estimated based on the intensity variation within each x-ray diffraction order measured at multiple, different angles of incidence and azimuth angles. The estimation of overlay involves a parameterization of the intensity modulations of common orders such that a low frequency shape modulation is described by a set of basis functions and a high frequency overlay modulation is described by an affine-circular function including a parameter indicative of overlay. In addition to overlay, a shape parameter of the metrology target is estimated based on a fitting analysis of a measurement model to the intensities of the measured diffraction orders. In some examples, the estimation of overlay and the estimation of one or more shape parameter values are performed simultaneously.

An X-ray apparatus includes: a mounting unit upon which an object to be measured is mounted; an X-ray generation unit that irradiates X-rays, from above the mounting unit or from below the mounting unit, to the object to be measured upon the mounting unit; an X-ray detector that acquires a transmission image of the object to be measured being irradiated by the X-rays; a first movement unit that moves at least one of the mounting unit, the X-ray generation unit, and the X-ray detector along a direction of irradiation of the X-rays; a position detection unit that detects a relative position of the mounting unit, the X-ray generation unit, and the X-ray detector; and a calculation unit that calculates a magnification of a transmission image of the object to be measured acquired by the X-ray detector, in a state in which deflection of the mounting unit has occurred while the object to be measured is mounted upon the mounting unit.

Mask inspection apparatuses and/or mask inspection methods are provided that enable quick and accurate inspection of a registration of a pattern on a mask while a defect of the mask and the registration of the pattern are inspected simultaneously. The mask inspection apparatus may include a stage configured to receive a mask for inspection; an e-beam array including a plurality of e-beam irradiators configured to irradiate e-beams to the mask and detectors configured to detect electrons emitted from the mask; and a processor configured to process signals from the detectors. A defect of the mask may be detected through processing of the signal and registrations of patterns on the mask may be inspected based on positional information regarding the e-beam irradiators.

A method of failure analysis for locating open circuit defect in a metal layers, comprising: providing a chip sample having a metal layer, with an open circuit defect; delaminating the chip to expose the metal layer; depositing a metal conductive layer on the metal layer; removing a portion of the metal conductive layer to expose the metal layer; depositing a non-conductive protective layer to cover the exposed metal layer and any remaining portions of the metal conductive layer; preparing a TEM slice sample which comprises the metal layer, the remaining portions of the metal conductive layer, and the non-conductive protective layer; performing a VC analysis on the TEM slice sample to determine the defect position of the open circuit defect; and analyzing the defect position of the open circuit defect.

Techniques are provided for tomographic imaging with sub-beam resolution and spectral enhancement. A system implementing the techniques according to an embodiment includes a target structure comprising one or more selected materials nanopatterned on a first surface of the target structure in a selected arrangement. The system also includes a primary particle beam source to provide a particle beam incident on an area of the first surface of the target structure, the area encompassing one or more of the nanopatterned materials, such that the materials generate characteristic X-rays in response to the primary beam. The system further includes a spectral energy detector (SED) to perform individual photon counting and spectral analysis of the characteristic X-rays and estimate attenuation properties of the imaged sample. The sample is positioned both adjacent to a second surface of the target structure, opposite the first surface, and between the target structure and the SED.