A method determines the service life of a semiconductor power module, which controls an electric motor in a drive train of a vehicle. A temperature of the semiconductor power module is determined by means of a temperature model. A measured temperature of the semiconductor power module is compared with the temperature of the semiconductor power module determined by means of the temperature model and the status of the service life of the semiconductor power module is inferred from the comparison of the two temperatures.

Embodiments described herein include a data acquisition unit having a plurality of ports that are each configured to receive a signal from a respective temperature sensor of a device under test. Each of the temperature sensors is associated with a location with respect to the device under test. The data acquisition unit also includes a processor configured to determine a temperature corresponding to each temperature sensor, based on the signal received from the respective temperature sensor. The processor can then generate a thermal gradient for the device under test based on the temperature and the location of each of the temperature sensors. This thermal gradient can then be output for further analysis. Additional embodiments may be described and/or claimed herein.

A method for characterizing an integrated circuit that selecting at least two devices from an integrated circuit for measuring light emission, wherein each of the at least two devices have experienced a different level of stress, applying power to the integrated circuit, and measuring the light emission from the at least two devices. The method also includes comparing the light emission that is measured from the at least two devices, wherein a difference between the light emission that is measured from the at least two devices greater than a predetermined ratio indicates that at least one of the devices from the at least two devices has a below specification performance.

Power semi-conductor module (1) comprising: —at least one IGBT with a Gate G forming a first electrode (11) and an Emitter E forming a second electrode (12), or—at least one MOSFET with a Gate G forming a first electrode (11) and a Source S forming a second electrode (12). The first electrode (11) includes a polysilicon material made in one piece. The one-piece is made partly of a monitoring portion (13). The monitoring portion (13) is in electrical contact with the second electrode (12) such that a leakage current flows between the first electrode (11) and the second electrode (12) in an operational state of the module (1). The monitoring portion (13) has a location, a form, a size and a material composition selected together such that to have a variable resistance in function of its temperature during the operational state of the module (1).

A test circuitry and a method for testing the same and a test system are provided. The test circuitry includes: a test signal input end, configured to input an initial test signal; a signal output end, configured to output a target test signal; and a signal shaping circuitry coupled to the test signal input end and the signal output end, configured to remove a noise signal from the initial test signal to obtain the target test signal.

The present invention relates to an inspection method for a micro LED, the method being configured to inspect whether the micro LED is defective.

A method includes applying a DC stress condition to a transistor for a predetermined stress time, measuring an impedance of the transistor after the predetermined stress time, and repeating the application of the DC stress condition and the measurement of the impedance until the measured impedance exceeds an impedance threshold or a total stress time exceeds a time threshold, where the DC stress condition includes applying a non-zero drain voltage signal to a drain terminal of the transistor, applying a gate voltage signal to a gate terminal of the transistor, and applying a non-zero source current signal to a source terminal of the transistor.

A lifetime estimation system for estimating a lifetime of a heating source is provided in an apparatus for heating a target object using the heating source and performing a feedback control of a target object temperature using a temperature controller based on a temperature measurement value of the target object measured by a temperature measuring device. The temperature controller controls a power supplied to the heating source and performs a temperature control using a state space model to perform the feedback control of the temperature of the target object. The lifetime estimation system includes a temperature monitor unit that monitors the temperature measurement value of the target object, a hunting amount detection unit that detects a hunting amount in a stable region of the monitored temperature of the target object, and a lifetime estimation unit that estimates a lifetime of the heating source from the detected hunting amount.

The present disclosure provides a system and a method for monitoring semiconductor manufacturing equipment. The system includes a sensor, a circuit, and an analysis unit. The sensor provides a sensor signal. The circuit receives the sensor signal and generates an input signal. The analysis unit includes a signal management platform, receiving the input signal and performing a first data process to generate a first data signal; a diagnosis subsystem, receiving the first data signal from the signal management platform and performing a health status monitoring process to generate a second data signal; and a decision subsystem, performing a determination process to generate a third data signal according to the second data signal from the diagnosis subsystem. The diagnosis subsystem generates a feedback signal according to the third data signal, and the signal management platform transmits the feedback signal to the semiconductor manufacturing equipment.

An aging detector for an electrical circuit component and a method for monitoring an aging of a circuit component includes an input of the aging detector recording a parameter of the circuit component, with the aging circuit being configured to, based on the recorded parameter, determine a corresponding response threshold and/or a response or adapt the response threshold and/or the response, and to initiate the response to the parameter exceeding the specific response threshold.