A direct-current power supply applies a DC voltage to test semiconductor devices. A current detection unit detects a leakage current of a test circuit in which test semiconductor devices are included. A measuring instrument records a pulse waveform of the leakage current. An analyzer analyzes reliability of test semiconductor devices included in the test circuit based on the recorded pulse waveform.

An insulating substrate inspecting method includes bringing a lower electrode into contact with lower metal of an insulating substrate including an insulating layer, the lower metal in contact with a lower surface of the insulating layer, and upper metal in contact with an upper surface of the insulating layer, and bringing an upper electrode into contact with the upper metal, and applying an AC voltage to the lower electrode and the upper electrode to detect electromagnetic waves generated at a defect in the insulating layer.

A test circuit includes a first logic gate that receives a test signal or a first voltage, a second logic gate that receives the test signal, a third logic gate that receives an output of the first logic gate, an output of the second logic gate, or a second voltage, a fourth logic gate that receives the output of the first logic gate or the output of the second logic gate, and a power circuit that prevents the second and fourth logic gates from being driven by supplying power to the second and fourth logic gates when the first logic gate receives the first voltage and the third logic gate receives the second voltage.

A method of operating a wind converter is provided. The method includes receiving a plurality of forecasted datasets. The forecasted datasets include event signals for the wind converter during fast transient operating conditions (OCs) and operational data for the wind converter having a low sampling rate. The method further includes estimating a converter life consumption during normal OCs and a converter life consumption during the fast transient OCs. Further, the method includes computing a total converter life consumption of the wind converter. Moreover, the method includes predicting, using a remaining useful life (RUL) prediction module, an RUL for the wind converter based on the total converter life consumption. The method further includes adjusting operation of the wind converter by adjusting operating variables of the wind converter.

A reliability determination method, which is configured to test a batch of semiconductor devices, includes: obtaining a Welbull distribution of lifetime of the batch of semiconductor devices; dividing the Welbull distribution into at least a first section and a second section, wherein the first section and the second section meet a confidence interval; generating a first trend line of the first section and a second trend line of the second section according to the first confidence level, in which the first trend line has a first slope and the second trend line has a second slope; determining the first slope exceeds a second slope; and determining a predicted reliability of the batch of the semiconductor device under a target quality level according to the first section.

A system is provided. The system includes a semi-conductor device and a gate drive board. The gate drive board provides a voltage to the semi-conductor device. The system also includes a controller and a monitoring circuit. The controller drives the voltage provided by the gate drive board. The monitoring circuit is coupled to the gate drive board to monitor operations of the controller and the semi-conductor device.

Disclosed are a testing unit, system, and method for testing and predicting failure of optical receivers. The testing unit and system are configured to apply different values of current, voltage, heat stress, and illumination load on the optical receivers during testing. The test methods are designed to check dark current, photo current, forward voltage, and drift over time of these parameters.

A testing system includes a Device Under Test (DUT) interface structured to couple to one or more DUTs and a device characterization circuit structured to be controlled to perform static testing and dynamic testing of the one or more DUTs. The device characterization circuit includes a drain amplifier coupled to a drain of the one or more DUTs that is structured to measure drain leakage current. Methods of measuring drain current in a device that performs both static and dynamic testing are also described.

An aging test method for a light emitting device is provided. The aging test method includes: collecting, in an aging process applied to the light emitting device, an initial value of a first characteristic parameter of the light emitting device and an initial test time point; collecting a current value of the first characteristic parameter and a current test time point (step S1); generating a feature line according to the initial value, the current value, the initial test time point, and the current test time point, and calculating a slope of the feature line; determining whether the slope of the feature line is greater than or equal to a predetermined threshold and less than 0, and returning to the step S1 if a result of the determination is NO; and terminating the aging process applied to the light emitting device if the result of the determination is YES.

A semiconductor device with at least one embedded photodetector is disclosed. The at least one photodetector is embedded in a hot carrier injection (HCI) area, and detects a quantity of emitted photons. Further, the photodetector triggers a warning when the photodetector detects a number of photons greater than a threshold number of photons. Additional embodiments are directed to a method of detecting HCI. The method includes embedding a photodetector in a power semiconductor device, setting at least one threshold number of photons, detecting photons, determining a number of photons, determining when the number of photons is above a threshold number of photons, and generating a warning. When the number of photons is above the threshold, the warning is triggered. Further embodiments are directed to an article of manufacture comprising at least one semiconductor device with at least one photodetector embedded in an area predicted to experience HCI.