A microelectromechanical system (MEMS) sensor testing device, system and method are provided. The testing device includes a socket having a plurality of pads configured to receive a respective plurality of pins of the MEMS sensor, a body having a plurality of operable positions associated with a respective plurality of orientations of the MEMS sensor and circuitry which performs a method for testing the MEMS sensor in the plurality of operable positions. The method includes, for each position of the plurality of operable positions, outputting an indication of the position to the plurality of operable positions, receiving one or more measurements made by the MEMS sensor at the respective position and determining whether the one or more measurements satisfy a reliability criterion. The method includes generating a report based on the plurality of measurements and indicating whether the plurality of measurements satisfy a plurality of reliability criteria, respectively.

During frequency detection, a constant current source outputs an output current to charge a variable capacitor for multi-period. In a calibration mode, according to a comparison result between a cross voltage of the variable capacitor and a reference voltage, a capacitance value of the variable capacitor is adjusted. In a monitor mode, according to a reference frequency and the cross voltage of the variable capacitor, a frequency under test of a circuit under test is detected.

A testing system includes a Device Under Test (DUT) interface structured to couple to one or more DUTs and a device characterization circuit structured to be controlled to perform static testing and dynamic testing of the one or more DUTs. The device characterization circuit includes a drain amplifier coupled to a drain of the one or more DUTs that is structured to measure drain leakage current. Methods of measuring drain current in a device that performs both static and dynamic testing are also described.

Power reduction and voltage adjustment techniques for computing systems and processing devices are presented herein. In one example, a method includes executing a voltage characterization service for a processing device of a computing apparatus to determine at least one supply voltage for the processing device, the voltage characterization service comprising a functional test that exercises the processing device at iteratively adjusted voltages in context with associated system elements of the computing apparatus. During execution of the voltage characterization service, the method includes monitoring for operational failures of at least the processing device, and responsive to the operational failures, determining at least one resultant supply voltage.

The present invention provides a chip comprising a circuit module, a power switch and a detection and control circuit. The power switch is coupled between a supply voltage and the circuit module, and is used to selectively connect the supply voltage to the circuit module, and control a current amount flowing into the circuit module according to at least a control signal. The detection and control circuit is coupled to the power switch, and is used to detect a first signal generated by a first circuit positioned surrounding the circuit module, and compare the first signal with a second signal in a real-time manner to generate the control signal to adjust the current amount flowing into the circuit module.

Examples relate to a current sensor and to a method for sensing a strength of an electric current using two groups of magnetic sensing probes. The current sensor includes a first group and a second group of magnetic sensing probes. The current sensor comprises sensor circuitry coupled to the first and the second group of magnetic sensing probes. The sensor circuitry is configured to determine a first differential magnetic field measurement of a magnetic field using probes of the first group of magnetic sensing probes. The sensor circuitry is configured to determine a second differential magnetic field measurement of the magnetic field using probes of the second group of magnetic sensing probes. The sensor circuitry is configured to determine a strength of the electric current based on a difference between the first differential magnetic field measurement and the second differential magnetic field measurement.

A non-transitory computer-readable recording medium has stored therein a program that causes a computer to execute a process, the process including: generating, based on search history information indicating history of search in a component search device with respect to feature values of a component, appearance frequency information indicating frequencies at which the feature values appear in the search history information; generating, based on the appearance frequency information, weighting information in which weights are associated with the feature values; executing learning on accumulated failure record information to build a failure estimation model for estimating a failure rate of the component; and estimating the failure rate of the component by using the built failure estimation model.

A sensor integrated circuit including a regulator for generating a regulated voltage includes a digital load configured to draw a load current from the regulator in response to a clock signal during in situ operation and a comparator configured to determine the absence or presence of a fault during in situ operation. The load current is less than or equal to a predetermined level in the absence of a fault and is greater than the predetermined level in the presence of a fault. The comparator is responsive to the load current and to a threshold level and is configured to generate a comparator output signal having a level indicative of whether the load current is less than or greater than the threshold level in order to thereby determine the absence or presence of a fault during in situ operation, respectively.

Aspects of the invention include a circuit having a power supply sensitive delay circuit, a variable delay circuit coupled to the power supply sensitive delay circuit, a delay line coupled to the variable delay circuit, and a logic circuit coupled to the delay line.

One example includes a method for measuring a quiescent current in a switching voltage regulator. The method includes generating a mathematical model of a circuit design associated with the switching voltage regulator. The mathematical model includes measurable parameters to describe a switching current of a power switch of the switching voltage regulator. The method also includes fabricating a circuit comprising the switching voltage regulator based on the circuit design. The fabricated circuit includes the power switch and conductive I/O. The method also includes coupling the conductive I/O of the fabricated circuit to a circuit test fixture and providing electrical signals to the conductive I/O via the circuit test fixture. The method also includes measuring the measurable parameters in response to the electrical signals and applying the measurable parameters to the mathematical model to calculate the switching current. The method further includes calculating the quiescent current based on the switching current.