Systems and methods for measuring DC voltage of an insulated conductor (e.g., insulated wire) are provided, without requiring a galvanic connection between the conductor and a test electrode or probe. A non-contact DC voltage measurement device may include a conductive sensor that is mechanically oscillated. The device may also include a conductive internal ground guard that is galvanically isolated from the conductive sensor, and a conductive reference shield that is galvanically insulated from the internal ground guard. The device may further include a common mode reference voltage source that generates an alternating current (AC) reference voltage, and a sensor signal measurement subsystem electrically coupled to the conductive sensor. Control circuitry may receive a sensor current signal from the sensor signal measurement subsystem, and determine the DC voltage in the insulated conductor based at least in part on the received sensor current signal.

A package substrate may include a circuit and a leaky surface wave launcher. The circuit may perform engineering tests and end-user operations using sideband signals. The leaky surface wave launcher may perform near field wireless communication. The leaky surface wave launcher may include a via and a strip line. The via may be electrically coupled to the circuit. The via may provide the sideband signals to and receive the sideband signals from the circuit. The strip line may be electrically coupled to the via. The strip line may be excited by the sideband signals to wirelessly couple the leaky surface wave launcher with an external device. The strip line and the via may be unbalanced such that the strip line generates a leaky wave that propagates at least a portion of the package substrate and an environment proximate the package substrate.

A method for measuring performance of at least one DUT in a reverberation chamber over a frequency band, the method including, iteratively: generating a fading scenario by the reverberation chamber; identifying at least one measurement sub-band included in the frequency band, wherein the at least one measurement sub-band complies with a gain flatness criterion; measuring performance of the at least one DUT in the at least one identified measurement sub-band, thereby generating at least one performance measurement result; accumulating the at least one performance measurement result; and determining measurement coverage and terminating the performance measurement in case the measurement coverage meets a coverage criterion.

A control device controls a contact probe in synchronization with a pulse-controlled light having a predetermined wavelength, a measurement instrument measures a characteristic of a sample to be inspected or an analysis sample, and a circuit constant or a defect structure of the sample to be inspected is estimated based on a circuit model created by an electric characteristic analysis device configured to generate the circuit model based on a value measured by the measurement instrument and a detection signal of secondary electrons detected by the charged particle beam device.

A semiconductor inspection device 1 having a first measurement mode and a second measurement mode includes: an electron optical system configured to irradiate a sample with an electron beam; an optical system configured to irradiate the sample with light; an electron detector configured to detect a signal electron; a photodetector 29 configured to detect signal light; a control unit 11 configured to control the electron optical system and the optical system such that an electron beam and light are emitted under a first irradiation condition in the first measurement mode, and to control the electron optical system and the optical system such that an electron beam and light are emitted under a second irradiation condition in the second measurement mode; and a computer configured to process a detection signal from the electron detector or the photodetector.

A semiconductor laser device (2) is placed on a first heating-cooling device (1). A probe holder (4) is attached on a second heating-cooling device (3), A measurement probe (8) is fixed to a distal end of the probe holder (4). A fine movement table (9) moves the second heating-cooling device (3) and the probe holder (4) so that a distal end of the measurement probe (8) contacts the semiconductor laser device (2). An inspection apparatus (10) inputs an inspection signal to the semiconductor laser device (2) through the measurement probe (8).

Systems, devices, and methods for performing a non-contact electrical measurement (NCEM) on a NCEM-enabled cell included in a NCEM-enabled cell vehicle may be configured to perform NCEMs while the NCEM-enabled cell vehicle is moving. The movement may be due to vibrations in the system and/or movement of a movable stage on which the NCEM-enabled cell vehicle is positioned. Position information for an electron beam column producing the electron beam performing the NCEMs and/or for the moving stage may be used to align the electron beam with targets on the NCEM-enabled cell vehicle while it is moving.

An over the air, OTA, test chamber for testing at least one device under test, DUT, provided within the OTA test chamber which includes a thermal bubble component adapted to receive the device under test, DUT, comprising an air inlet adapted to supply air into the thermal bubble component, an air outlet adapted to remove air from the thermal bubble component and an airstream diffusor provided at the air inlet and adapted to diffuse an airstream supplied by the air inlet within the thermal bubble component.

An apparatus with a built-in self-test includes a sensor electrode, an impedance sensor coupled to the sensor electrode to measure a test impedance of the sensor electrode as influenced by an external load, a secondary electrode disposed adjacent to the sensor electrode to inductively couple with the sensor electrode and influence the external load on the sensor electrode, a first switch coupled to the secondary electrode to selectively change a second impedance of the secondary electrode, and a controller coupled to the impedance sensor and the first switch. The controller includes logic for adjusting the first switch to wirelessly load the sensor electrode with the secondary electrode in a predetermined impedance state, measuring the test impedance with the impedance sensor while the secondary electrode is in the predetermined impedance state, and comparing the measured test impedance against a threshold impedance range to perform a self-test.

An apparatus with a built-in self-test includes a sensor electrode, an impedance sensor coupled to the sensor electrode to measure a test impedance of the sensor electrode as influenced by an external load, a secondary electrode disposed adjacent to the sensor electrode to inductively couple with the sensor electrode and influence the external load on the sensor electrode, a first switch coupled to the secondary electrode to selectively change a second impedance of the secondary electrode, and a controller coupled to the impedance sensor and the first switch. The controller includes logic for adjusting the first switch to wirelessly load the sensor electrode with the secondary electrode in a predetermined impedance state, measuring the test impedance with the impedance sensor while the secondary electrode is in the predetermined impedance state, and comparing the measured test impedance against a threshold impedance range to perform a self-test.