Disclosed are a magnetic resonance temperature correction method based on k-space energy spectrum analysis and a system. The method includes: filling a k-space data matrix of magnetic resonance with zeros row by row, and performing an inverse Fourier transform on the k-space data matrix after filling each row of zeros, to obtain a reconstructed image; drawing a pixel intensity variation curve according to a pixel intensity of each pixel in all reconstructed images and a number of rows filled with zeros, and obtaining echo error according to the pixel intensity variation curve, calculation an actual echo time, and calculating a corresponding temperature variation value based on the TE of each pixel.

In one aspect, a linear sensor includes at least one magnetoresistance element that includes a first spin valve and a second spin valve positioned on the first spin valve. The first spin valve includes a first set of reference layers having a magnetization direction in a first direction and a first set of free layers having a magnetization direction in a second direction orthogonal to the first direction. The second spin valve includes a second set of reference layers having a magnetization direction in the first direction and a second set of free layers having a magnetization direction in a third direction orthogonal to the first direction and antiparallel to the second direction. The first direction is neither parallel nor antiparallel to a direction of an expected magnetic field.

A high bandwidth Hall sensor includes a high bandwidth path and a low bandwidth path. The relatively high offset (from sensor offset) of the high bandwidth path is estimated using a relatively low offset generated by the low bandwidth path. The relatively high offset of the high bandwidth path is substantially reduced by combining the output of the high bandwidth path with the output of the low bandwidth path to generate a high bandwidth, low offset output. The offset can be further reduced by including transimpedance amplifiers in the high bandwidth sensors to optimize the frequency response of high bandwidth Hall sensor.

A magnetic field sensor includes a first magnetic field sensing element configured to produce a first signal representing a detected external magnetic field; a circular vertical hall element configured to produce a second signal representing an amplitude of the external magnetic field; and an error compensation circuit coupled to receive the first and second signal, compute an error value based on the amplitude of the external magnetic field, and apply the error value to the first signal to compensate for an error in the first signal.

A method of calibrating a magnetic field sensor includes setting a first input signal at a first input node of a processor of the magnetic field sensor to a constant value. While the magnetic field sensor experiences a magnetic field, a first transition at an output node of the processor is measured. A second input signal at a second input node of the processor is set to the constant value. While the magnetic field sensor experiences the magnetic field, a second transition of at the output node of the processor is measured. An orthogonality error value is calculated based on a deviation of the first transition and the second transition. The first and/or second input signal is adjusted by modifying the first and/or second input signal by a function of the calculated orthogonality error value to compensate for the orthogonality error.

A method for quantum spin amplification includes spin-polarizing an ensemble of quantum spins in an initial spin state to generate a transversely-polarized sensing spin state. The quantum spins identically have an upper energy state and a lower energy state. The sensing spin state accumulates a phase shift that transforms the sensing spin state into a phase-accumulated spin state having first and second transverse polarization components. The phase-accumulated spin state is transformed into an intermediate spin state by rotating the first transverse polarization component into a longitudinal polarization component of the intermediate spin state. The ensemble is then coupled to an auxiliary mode, during which the intermediate spin state evolves such that the second transverse polarization component is amplified into an amplified transverse polarization. This amplified transverse polarization is then measured.

A magnetic pole detection circuit includes a multi-phase voltage divider unit, a filter unit, a DC level compensation unit, an amplifying unit, and a hysteresis comparison unit. The multi-phase voltage divider unit is configured to detect a back electromotive force (EMF) signal of a multi-phase motor. The filter unit is configured to filter the back EMF signal to generate a filtered signal. The DC level compensation unit is configured to compensate a DC level of the filtered signal to generate a compensation signal. The amplifying unit is configured to amplify the compensation signal to generate an amplified signal. The hysteresis comparison unit is configured to generate a zero-crossing point signal according to the amplified signal and a reference signal. The zero-crossing point signal is adapted to control an excitation mode of the multi-phase motor.

A non-transitory computer readable storage medium storing a program capable of accurately detecting unexpected noise included in a target signal is provided. The program causes a computer to implement an acquisition function of acquiring data of a plurality of channels that are three or more channels, a selection function of selecting data of a single channel as attention channel data from the data of the plurality of channels acquired in the acquisition function, and a dissimilarity calculation function of calculating dissimilarity for data of two or more channels within data of channels not selected in the selection function in each prescribed range of the attention channel data with respect to the attention channel data selected in the selection function.

A magnetic-field-sensitive MOSFET (MagFET) is described herein. In accordance with one embodiment, the MagFET comprises a semiconductor body, a first well region arranged in the semiconductor body and being doped with dopants of a first doping type, and a number of N contact regions arranged in the first well region and doped with dopants of a second doping type, which is complementary to the first doping type, wherein N is equal to or greater than three. A gate electrode covers the first well region between the contact regions. The gate electrode is separated from the first well region by an isolation layer and is configured to control a charge carrier density in the first well region between the contact regions dependent on a voltage applied at the gate electrode. The first well region has a center of symmetry and the contact regions are arranged rotationally symmetric with respect to the center of symmetry with a rotational symmetry of order N.

A Hall effect device includes a semiconductor region and at least three contacts to the semiconductor region, which are arranged in the semiconductor region substantially along a line or curve. The line or curve functionally separates the semiconductor region in a first region and a second region. The Hall effect device further including a first electrode that is electrically isolated against the first region and a second electrode that is electrically isolated against the second region. Two of the at least three contacts supply electric energy to the first region and to the second region, and the remaining at least one contact taps an output signal of the first region and/or the second region that responds to a magnetic field component.