A sensor cross-talk compensation system includes a semiconductor substrate having a first main surface and a second main surface opposite to the first main surface; a vertical Hall sensor element disposed in the semiconductor substrate, the vertical Hall sensor element is configured to generate a sensor signal in response to a magnetic field impinging thereon; and an asymmetry detector configured to detect an asymmetric characteristic of the vertical Hall sensor element. The asymmetry detector includes a detector main region that vertically extends into the semiconductor substrate from the first main surface towards the second main surface and is of a conductivity type having a first doping concentration; and at least three detector contacts disposed in the detector main region at the first main surface, the at least three detector contacts are ohmic contacts of the conductivity type having a second doping concentration that is higher than the first doping concentration.

An electronic device is provided. The electronic device includes a magnetic sensor, an acceleration sensor, and a processor operatively connected to the magnetic sensor and the acceleration sensor, wherein the processor is configured to acquire multiple pieces of first magnetic data by using the magnetic sensor in a first area where the electronic device is located, generate a virtual marker corresponding to the first area by using the multiple pieces of first magnetic data, determine the movement of the electronic device on the basis of multiple pieces of first acceleration data in a first direction, the data being acquired by using the acceleration sensor, determine the posture of the electronic device on the basis of multiple pieces of second acceleration data in a second direction that is perpendicular to the first direction, the data being acquired by using the acceleration sensor, and determine, on the basis of at least one of the movement of the electronic device and the posture of the electronic device, multiple pieces of third magnetic data to be used for comparison with the virtual marker, among multiple pieces of second magnetic data acquired within a designated radius with reference to the first area by using the magnetic sensor.

Magnetic field measurement by a set of magnetometers which are linked to a same moveable support and which have different orientations of eigendirections with respect to this support A processor determines, during a measurement in a given position and orientation of the support and of the set of magnetometers, for each magnetometer, of the orientation deviation between the eigendirections of the magnetometer and a candidate magnetic field, the magnetometer for which this deviation is minimal, the magnetic field measured by this sensor being selected as the magnetic field measured by the set of magnetometers. The magnetometers are distributed in space in order to cover a maximum of different orientations.

A magnetic sensor includes a silicon substrate, a cross-shaped metal pattern formed on the silicon substrate and directly contacting the silicon substrate, and an insulating layer covering the cross-shaped metal pattern.

A magnetic sensor device includes at least one magnetic sensor and a support. A center of gravity of an element layout area of the at least one magnetic sensor is deviated from a center of gravity of a reference plane of the support. The at least one magnetic sensor includes four resistor sections constituted by a plurality of magnetoresistive elements. Magnetization of a free layer in each of two of the resistor sections includes a component in a third magnetization direction. The magnetization of a free layer in each of the other two resistor sections includes a component in a fourth magnetization direction opposite to the third magnetization direction.

Various embodiments of the teachings herein include an apparatus for measuring a magnetic field of a conductor of an electric current. The apparatus may include three magnetic field sensors arranged on a circumference of a non-circular ellipse defined by parallel projection or orthogonal projection of a circle. Three first positions are arranged equidistantly on a circumference of the circle. The three first positions emerge from the parallel projection or the orthogonal projection onto at least three second positions on the ellipse. The three magnetic field sensors are arranged at the three second positions. The magnetic field is measured without using a flux concentrator.

A magnetic sensor device includes first and second surfaces, and first and second inclined surfaces, which are inclined with respect to the first surface; first through third magnetic sensor units for detecting magnetism in first through third axial directions; and a signal processing unit that performs signal processing on the basis of first through third sensor signals output from the first through third magnetic sensor units. The first axial direction is a direction orthogonal to the first surface, and the second and third axial directions are directions orthogonal to each other on the first surface. The first and second magnetic sensor units are provided on the second inclined surface, respectively. A corrected signal generation unit included in the signal processing unit generates first and second corrected signals, which are the first and second sensor signals corrected in accordance with the inclination angles of the first and second inclined surfaces.

A magnetic sensor array device is comprised of an array of magnetic sensors arranged on a common semiconductor substrate to measure the multi-axis magnetic field of an arbitrary sized region at high speed with high spatial resolution and high magnetic resolution. This invention further improves a multi-axis magnetic sensor array device fabricated on a common semiconductor substrate with additional optimizations to provide for variable spatial resolution, variable magnetic resolution, and a novel secret key derivation.

A high-temperature three-dimensional Hall sensor with a real-time working temperature monitoring function includes a buffer layer, an epitaxial layer, and a barrier layer sequentially grown on a substrate. A high-density two-dimensional electron gas is induced by polarization charges in a potential well at an interface of heterojunctions of the epitaxial layer. A lower surface of the substrate includes a vertical Hall sensor for sensing a magnetic field parallel to a surface of a device. An upper surface of the barrier layer includes a “cross” horizontal Hall sensor for sensing a magnetic field perpendicular to the surface of the device.

A light detection element includes: a plurality of magnetic elements, wherein each of the magnetic elements includes a first ferromagnetic layer that is irradiated with light and a second ferromagnetic layer and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, and wherein at least two of the magnetic elements are arranged to be inside a spot of the light applied to the first ferromagnetic layers of the at least two of the magnetic elements.