One feature pertains to a microdosimeter cell array that includes a plurality of microdosimeter cells each having a semiconductor volume adapted to generate a current in response to incident radiation. The semiconductor volumes of each of the plurality of microdosimeter cells have at least one of a size, a shape, a semiconductor type, and/or a semiconductor doping type and concentration that is associated with one or more cells or cell components of a human eye. A processing circuit is also communicatively coupled to the microdosimeter cell array and generates a signal based on the currents generated by the semiconductor volumes of the plurality of microdosimeter cells. The signal generated by the processing circuit is indicative of an amount of radiation absorbed by the microdosimeter cell array.

A radiation dosimeter includes a first radiation detector configured to operate in a counting mode, and a second radiation detector configured to operate in a current mode. A processor is configured to calculate a first detected dose of the first radiation detector, a second detected dose of the second radiation detector, and a total dose value using the first detected dose and the second detected dose. An alarm indicates when the total dose value is above a predetermined level.

A method for radiation dosage measurement includes: (1) exposing a plurality of single-poly floating gate sensor cells to radiation; (2) measuring threshold voltage differences between logical pairs of the exposed sensor cells using differential read operations, wherein the sensor cells of each logical pair are separated by a distance large enough that radiation impinging on one of the sensor cells does not influence the other sensor cell; (3) determining whether each logical pair of exposed sensor cells is influenced by exposure to the radiation in response to the corresponding measured threshold voltage difference; and (4) determining a dosage of the radiation in response to the number of logical pairs of the exposed sensor cells determined to be influenced by exposure to the radiation. A non-radiation influenced threshold voltage shift may be measured and used in determining whether each logical pair of exposed sensor cells is influenced by radiation exposure.

An X-ray detector includes a first circuit with an NPN-type bipolar transistor and a second circuit configured to compare a voltage at a terminal of the NPN-type bipolar transistor with a reference value substantially equal to a value of the terminal voltage which would occur when the first circuit has been exposed to a threshold quantity of X-rays.

Low power non-volatile non-charge-based variable supply RFID tag memory devices and methods for reading and writing predetermined ID values for a RFID tag are described. The RFID tag memory device includes a reference/bias generator that receives and provides voltages and currents for write and read operations, a clocked comparator that provides a voltage comparison with a reference voltage, a shift register that receives a non-charge-based memory component value saved in the shift register, a memory cell that includes non-charge-based memory components to store corresponding predetermined ID values, a ring counter that provides ring signals to enable sequential writing and reading of the predetermined ID values to and from the memory cell, a write decision component that receives ring signals to enable the write operation, an output select/isolation component for reading and a read/write component to enable reading or writing the predetermined ID values in response to received ring signals.

An X-ray detector includes a first circuit with an NPN-type bipolar transistor and a second circuit configured to compare a voltage at a terminal of the NPN-type bipolar transistor with a reference value substantially equal to a value of the terminal voltage which would occur when the first circuit has been exposed to a threshold quantity of X-rays.

The present invention relates to a silicon carbide telescopic detector for ionizing radiation or a measuring instrument equipped with such a telescopic detector for identifying the type of ionizing radiation and/or measuring a dose released by the radiation, a detector production procedure, as well as uses and original methods which use the detector.

The present invention relates to a silicon carbide telescopic detector for ionizing radiation or a measuring instrument equipped with such a telescopic detector for identifying the type of ionizing radiation and/or measuring a dose released by the radiation, a detector production procedure, as well as uses and original methods which use the detector.

A system and method for determining accumulated radiation dose is presented. In some embodiments, the system and method include use of one or more RADFETs to measure and accumulated radiation dose over a desired period of time from an area of interest in a patient. In some embodiments, the one or more RADFETs may be arranged on a test strip, and electrical circuitry provided to selectively couple certain terminals of the RADFETS together to facilitate improved measurement of accumulated dose. A reader may also be utilized wherein the reader may receive a test strip, decouple the electrical connections between select terminals, inject a current into the RADFET and/or measure a voltage from the RADFET corresponding to an accumulated radiation dose.

The present disclosure teaches a UV dosimeter comprising a UV-sensitive layer and a barrier that protects the UV-sensitive layer. The barrier is permeable to oxygen but impermeable to water and, thus, protects the UV-sensitive layer from water while allowing exposure of the UV-sensitive layer to oxygen. The UV-sensitive layer is accessible to both UV radiation and visible light. The UV-sensitive layer comprises a mixture of a semiconductor material, a UV-oxidizable dye, a sacrificial electron donor, and a matrix material. The semiconductor material has a band gap that corresponds to photon energy of the UV radiation. The dye has both an oxidation state and a reduction state. The oxidation state of the dye is visibly distinguishable from the reduction state of the dye. The sacrificial electron donor oxidizes when exposed to UV radiation. The matrix provides structural integrity to the mixture.