A method for estimating a dose rate, on the basis of measurements taken by a gamma camera (2), the gamma camera defining an observation field (Ω), the estimated dose rate originates from irradiating sources (10.sub.a, 10.sub.b) located in the observation field, the irradiating sources emitting ionizing electromagnetic radiation; the observation field is discretized into a mesh; the gamma camera (2) comprises pixels (2.sub.j), each pixel being configured to detect the ionizing electromagnetic radiation, during an acquisition time, and to form an energy spectrum therefrom, each pixel being associated with at least one point of the mesh, such that together the pixels allow a position of the irradiating sources in the observation field to be obtained in one energy band or in a plurality of energy bands; the method comprising estimating a dose rate generated, at the gamma camera, by points of the mesh.

An organic semiconductor detector for detecting radiation has an organic conducting active region, an output electrode and a field effect semiconductor device. The field effect semiconductor device has a biasing voltage electrode and a gate electrode. The organic conducting active region is connected on one side to the field effect semiconductor device and is connected on another side to the output electrode. The organic semiconductor detector has an option switching circuitry having a field effect semiconductor device and resistance.

Techniques are disclosed for systems and methods to provide a radiation detector module for a radiation detector. A radiation detector module includes a metallic and/or metalized enclosure, a radiation sensor disposed within the enclosure, readout electronics configured to provide radiation detection event signals corresponding to incident ionizing radiation in the radiation sensor, and a cap including an internal interface configured to couple to the readout electronics and an external interface configured to couple to a radiation detector, where the cap is configured to hermetically seal the radiation sensor within the enclosure. The cap may be implemented as an edge plated printed circuit board (PCB) including a slot configured to mate with a planar edge of an open surface of the enclosure, where the slot is soldered to the planar edge of the enclosure to hermetically seal the radiation sensor within the enclosure.

For calibration of internal dose in nuclear imaging, the dose model used for estimating internal dose in a patient is calibrated. One or more values of the dose model (e.g., a physics simulation, dose kernels, or a transport model) are set based on measured dose. The dose may be measured relative to specific tissues and/or isotopes, providing for tracer and tissue specific calibration. For example, dose from the tracer to be injected into the patient is estimated from emissions as well as measured by a dosimeter in a tissue mimicking tissue mimicking object. These doses are used to calibrate the dose model, which calibrated dose model is then used to determine internal dose for the patient.

Low power non-volatile non-charge-based variable supply RFID tag memory devices and methods for reading and writing predetermined ID values for a RFID tag are described. The RFID tag memory device includes a reference/bias generator that receives and provides voltages and currents for write and read operations, a clocked comparator that provides read and write clock signals, a shift register that receives a non-charge-based memory component read voltage saved in the shift register, a memory cell that includes non-charge-based memory components to store corresponding predetermined ID values, a ring counter that provides ring signals to the shift register to enable sequential writing and reading of the predetermined ID values to and from the memory cell, a write decision component that receives ring signals to enable the write operation, an output select/isolation component and a read/write component that receive the ring signals to enable reading the predetermined ID values.

Low-power, dual sensitivity thin oxide FG-MOSFET sensors in RF-CMOS technology for a wireless X-ray dosimeter chip, methods for radiation measurement and for charging and discharging the sensors are described. The FG-MOSFET sensor from a 0.13 m (RF-CMOS process, includes a thin oxide layer having a device region, a source and a drain associated with the device well region, separated by a channel region, a floating gate extending over the channel region, and a floating gate extension extending over the thin oxide layer adjacent to the device well region. In a matched sensor pair for dual sensitivity radiation measurement, the floating gate and the floating gate extension of a FG-MOSFET higher sensitivity sensor are without a salicide layer or a silicide layer formed thereon and the floating gate and the floating gate extension of a FG-MOSFET lower sensitivity sensor have a salicide layer or a silicide layer formed thereon.

Absorbed ionizing particles differentially effect first and second acquiring circuit stages configured to respectively generate first and second acquisition signals. Each acquisition signal has a characteristic that is variable as a function of an amount of absorbed ionizing particles. A measuring circuit generates, on the basis of the first and second acquisition signals, a relative parameter indicative of a relationship between the variable characteristics. A computation of a total ionizing dose is made using a 1st- or 2nd-degree polynomial relationship in the relative parameter.

An organic semiconductor detector for detecting radiation has an organic conducting active region, an output electrode and a field effect semiconductor device. The field effect semiconductor device has a biasing voltage electrode and a gate electrode. The organic conducting active region is connected on one side to the field effect semiconductor device and is connected on another side to the output electrode.

The dosimeter has two vertical field effect transistors (VFETs), each VFET with a bottom and top source/drain and channel between them. An implanted charge storage region material lies between and in contact with each of the vertical channels. A trapped charge is within the implanted charge storage region. The amount of the trapped charge is related to an amount of radiation that passes through the implanted charge storage region.

A semiconductor radiation monitor (i.e., dosimeter) is provided that has an oxide charge storage region located on a first side of a semiconductor fin and a functional gate structure located on a second side of the semiconductor fin that is opposite the first side. Charges are created in the oxide charge storage region that is located on the first side of the semiconductor fin and detected on the second side of the semiconductor fin by the functional gate structure. Multiple semiconductor fins in parallel can form a dense and very sensitive semiconductor radiation monitor.