Patent classifications
G01T1/026
Radiation source localization systems and methods
Radiation source localization systems and related techniques are provided to improve the operation of handheld or unmanned mobile sensor or survey platforms. A radiation source localization system includes a logic device configured to communicate with a communications module and a directional radiation detector, where the communications module is configured to establish a wireless communication link with a base station associated with the directional radiation detector and/or a mobile sensor platform, and the directional radiation detector includes a sensor assembly configured to provide directional radiation sensor data as the directional radiation detector is maneuvered within a survey area.
Nanosheet radiation dosimeter
A semiconductor radiation monitor is provided that includes a charge storage region composed of a dielectric material nanosheet, such as, for example an epitaxial oxide nanosheet, which is sandwiched between a top semiconductor nanosheet and a bottom semiconductor nanosheet. A functional gate structure is located above the top semiconductor nanosheet and beneath the bottom semiconductor nanosheet.
Method and apparatus for electronics-harmful-radiation (EHR) measurement and monitoring
An electronics-harmful-radiation (EHR) monitoring system includes an EHR measurement circuit. The EHR measurement circuit includes a first device, a single event upset (SEU) detector circuit configured to determine a first number of SEUs of the first device during a first period, and an EHR measurement generator configured to generate a first EHR value based on the first number of SEUs and the first period.
VERTICAL TRANSISTOR BASED RADIATION DOSIMETER
The dosimeter has two vertical field effect transistors (VFETs), each VFET with a bottom and top source/drain and channel between them. An implanted charge storage region material lies between and in contact with each of the vertical channels. A trapped charge is within the implanted charge storage region. The amount of the trapped charge is related to an amount of radiation that passes through the implanted charge storage region.
Compensating for degradation of electronics due to radiation vulnerable components
Techniques to compensate non-radiation hardened components for changes or degradation in performance that result from exposure to radiation. During testing and modeling phase, a component's performance may be characterized as a result of the exposure to radiation. In some examples, some performance characteristics, such as voltage response, frequency response, gain, leakage or other characteristics, may change as the component's exposure to an amount of radiation increases. During normal operation, a system may include one or more devices that measure the amount of radiation to which the system may be subjected, such as a radiation dosimeter. The system may compensate the non-radiation hardened component based on the amount of radiation received the known component performance change caused by radiation as determined during the modeling phase.
Dose rate measurement systems and methods
Techniques are disclosed for systems and methods to detect radiation accurately, and particularly in a highly radioactive environment. A system includes a detector module for a radiation detector and a parallel signal analyzer configured to receive radiation detection event signals from the detector module and provide a spectroscopy output and a dose rate output. The parallel signal analyzer may be configured to analyze the radiation detection event signals in parallel in first and second analysis channels according to respective first and second measurement times and determine the spectroscopy output and the dose rate output based on radiation detection event energies determined according to the respective first and second measurement times.
Photonic calorimeter and process for performing calorimetry
A photonic calorimeter converts ionizing radiation dose to heat and includes: a radiation absorber, a temperature compensator disposed within the radiation absorber, a compensation waveguide, a compensation resonator, a compensation resonator, a thermal isolator on which the radiation absorber is disposed and that thermally isolates the radiation absorber from heat loss by thermal transfer due to physical contact by an object, and the temperature compensator changes the optical resonance of the compensation resonator in response to a change in temperature of the radiation absorber due to absorption of the ionizing radiation by the radiation absorber.
FLEXIBLE ANTENNA FOR A WIRELESS RADIATION DOSIMETER
A flexible antenna for a wireless X-ray dosimeter chip is described. The flexible antenna includes a dipole antenna associated with an artificial magnetic conductor, wherein the artificial magnetic conductor includes: a top layer configured to partially act as a reflective surface; a bottom conductive ground plane layer configured to prevent propagation of incident electromagnetic waves and to reflect the electromagnetic waves; and a middle layer including a foam material configured to provide an appropriate phase delay between incident electromagnetic waves from the top layer and the reflected waves from the ground plane layer.
NANOSHEET RADIATION DOSIMETER
A semiconductor radiation monitor is provided that includes a charge storage region composed of a dielectric material nanosheet, such as, for example an epitaxial oxide nanosheet, which is sandwiched between a top semiconductor nanosheet and a bottom semiconductor nanosheet. A functional gate structure is located above the top semiconductor nanosheet and beneath the bottom semiconductor nanosheet.
Solid State Tissue Equivalent Detector With Gate Electrodes
An organic semiconductor detector for detecting radiation has an organic conducting active region, an output electrode and a field effect semiconductor device. The field effect semiconductor device has a biasing voltage electrode and a gate electrode. The organic conducting active region is connected on one side to the field effect semiconductor device and is connected on another side to the output electrode.