A hyperspectral imager (HSI) includes a first thin film filter, the first thin film filter including a first quarter wave mirror, a second quarter wave mirror, and a low-refractive-index wedge between the first quarter wave mirror and the second quarter wave mirror. The low-refractive-index wedge has a height dimension such that a distance between the first quarter wave mirror and the second quarter wave mirror increases linearly along a length of the low-refractive-index wedge.

The present invention provides an ink composition containing light-emitting nanocrystal particles and a photopolymerizable compound, wherein the photopolymerizable compound has a Log P value in the range of −1.5 to 7.0. The present invention also provides an ink composition containing light-emitting nanocrystal particles and a photopolymerizable compound, wherein the photopolymerizable compound has a Log P value in the range of −1.0 to 6.5, and the ink composition has a water (H.sub.2O) content of 90 ppm or less measured with a Karl Fischer moisture meter. The present invention also provides a light conversion layer including a plurality of pixel units, wherein the plurality of pixel units include a pixel unit containing a cured product of the ink composition, and the light conversion layer is formed of the cured product of the ink composition. The present invention also provides a color filter including the light conversion layer.

A color filter array may include a plurality of color filters arranged two-dimensionally and configured to allow light of different wavelengths to pass therethrough. Each of the plurality of color filters includes at least one Mie resonance particle and a transparent dielectric surrounding the at least one Mie resonance particle.

Disclosed are a combination structure including a nanostructure array including a plurality of nanostructures with a smaller dimension than the near-infrared wavelength are repeatedly arranged and a light absorption portion adjacent to the nanostructure array and including a near-infrared absorbing material configured to absorb light in at least a portion of near-infrared wavelength regions, an optical filter, an image sensor, a camera module, and an electronic device including the same.

The present application provides a preparation method of a hydrogenated composite film and an optical filter, and relates to the field of optical film filter technologies. The preparation method includes: introducing inert gas and hydrogen into a reaction chamber, and bombarding at least two materials in the reaction chamber and the introduced hydrogen using plasma formed by the inert gas, such that the at least two materials are sputtered onto a substrate and react with hydrogen ions generated by the hydrogen to form a hydrogenated composite film layer. The hydrogenated composite film layer includes at least two materials which are co-sputtered onto the same substrate using the sputtering technology to obtain a required material performance, so as to obtain the hydrogenated composite film layer with a refractive index greater than 3.5 and an extinction coefficient less than 0.005 under a wavelength of 700 nm to 1800 nm.

An optical sensor and filter assembly is provided and includes an optical sensor, a filter and a mounting structure. The optical sensor includes a detector layer having first and second opposed faces and a read-out integrated circuit (ROIC) to which the first face of the detector layer is hybridized. The filter permits passage of one or more wavelength bands of interest of incident light toward the optical sensor and the mounting structure directly hybridizes the filter to the second face of the detector layer.

A device is provided for camouflaging an object from an infrared detection apparatus. The device includes a cloak positionable between the object and the infrared detection apparatus. The cloak includes a layer of infrared absorptive material including a plurality of silicon nanowires. A flexible substrate has a first surface operatively connected to an inner surface of the layer. The substrate includes a heat dissipation arrangement for dissipating heat generated by the cloak during operation. An array of infrared emitters is operatively connected to a second surface of the substrate. The array of infrared emitters selectively radiates an infrared pattern to disguise the object to the infrared detection apparatus.

The present invention provides a method for manufacturing a quantum dot color filter. The method for manufacturing a quantum dot color filter of the present invention, after forming a blue sub-pixel part of a quantum dot color filter by applying a photolithographic operation to a transparent organic photoresist material, applies hydrophobicity treatment to the transparent organic photoresist layer so as to make use of hydrophobic characteristics so formed to help coat green quantum dot curable paste and red quantum dot photoresist sequentially on corresponding areas to form, in sequence, a green quantum dot curable paste layer and a red quantum dot photoresist layer located thereon, and then applies photolithographic operations to subject portions of the red quantum dot photoresist layer to etching for forming a green sub-pixel part and a red sub-pixel part of the quantum dot color filter, whereby compared to the conventional ways of manufacturing a quantum dot color filter, at least one round of photolithographic operation can be saved to greatly simplify the manufacturing process, reduce cost, and improve manufacturing efficiency, and it only needs to develop one type of quantum dot photoresist so as to greatly reduce difficulty and cost of development.

Provided is a semiconductor nanoparticle complex in which two or more kinds of ligands including a ligand I and a ligand II are coordinated to a surface of a semiconductor nanoparticle. The ligands are each an organic ligand including an organic group and a coordinating group. The ligand I is a thiocarboxylic acid represented by the following general formula (1). The mole fraction of the ligand I in the ligands is 0.2 mol % to 35.0 mol %.

General formula (1):

HS—X—(COOH)n  (1)

(In general formula (1), X is a (n+1)-valent hydrocarbon group, and n is a natural number of 1 to 3.) The present disclosure provides a semiconductor nanoparticle complex dispersible at a high mass fraction in a dispersion medium having polarity while a high fluorescence quantum yield (QY) of the semiconductor nanoparticle is retained.

A display component includes a transflective layer, a reflective layer, and at least one sidewall. The reflective layer is arranged opposing to the transflective layer, and the at least one sidewall is arranged between the reflective layer and the transflective layer. The transflective layer, the reflective layer, and the at least one sidewall are together configured, upon an input of an incident light through the transflective layer, to output a light of a target color out through the transflective layer. One or more of the at least one sidewall comprise at least one light-conversion layer configured to emit a light of the target color upon excitement by a light of a different color shedding thereupon. The display component can be configured to output a red light, a green light, or a blue light.