A light irradiation device includes a light source having a plurality of solid-state elements disposed on a substrate to be defined by a first direction and a second direction in a plurality of rows and irradiate the irradiation target with light from a third direction, an optical element refracting light from the solid-state elements, emitting the light and narrowing a spread angle of light to be emitted from the solid-state elements relative to the third direction, a first reflection portion having at least two first reflection surfaces on a downstream side in the third direction of the irradiation target and reflecting a part of light incident on the first reflection surface to the irradiation target, and a second reflection portion having a pair of second reflection surfaces disposed between the optical element and the first reflection portion and guiding light from the optical element to the first reflection surface.

An ultraviolet curing module includes a first light source and a second light source. The first light source is configured to emit ultraviolet with a first spectrum. The first spectrum has a first peak wavelength. The second light source is configured to emit ultraviolet with a second spectrum. The second spectrum has a second peak wavelength. Wherein, a difference between the first peak wavelength and the second peak wavelength is greater than 35 nm, and an irradiation range of ultraviolet of the first light source on an irradiated object at least partially overlaps an irradiation range of ultraviolet of the second light source on the irradiated object.

A method includes: producing a light beam made up of pulses having a wavelength in the deep ultraviolet range, each pulse having a first temporal coherence defined by a first temporal coherence length and each pulse being defined by a pulse duration; for one or more pulses, modulating the optical phase over the pulse duration of the pulse to produce a modified pulse having a second temporal coherence defined by a second temporal coherence length that is less than the first temporal coherence length of the pulse; forming a light beam of pulses at least from the modified pulses; and directing the formed light beam of pulses toward a substrate within a lithography exposure apparatus.

A method for preparing a double-sided microlens array, which is used to prepare a uniform, large-area and easy-to-control microlens array on upper and lower surfaces of a sapphire glass lens. A complete laser wavefront is spatially divided into many tiny parts, and each part is focused on the focal plane by a corresponding small lens, and the light spots are overlapped to achieve uniform light in a specific area. The sapphire glass lens is applied to the deep ultraviolet LED inorganic module packaging device to reduce the total reflection loss between the deep ultraviolet LED package optical window-air interface, and focus the light passing through the lens on the focal plane, while increasing the emission of light Coupling ability, uniform light intensity of ultraviolet LED.

A reflective imaging optical system which forms, on a second plane, an image of a pattern arranged on a first plane and illuminated with light from an illumination optical system includes a plurality of reflecting mirrors including first and second reflecting mirrors by which the light reflected by the first plane is reflected first, second, respectively. An area on the first plane illuminated with the light from the illumination optical system is an illumination objective area, the illumination objective area is positioned on a predetermined side of an optical axis of the reflecting mirrors, and reflection areas of the first and second reflecting mirrors are positioned on the predetermined side of the optical axis of the reflecting mirrors; and the first and second reflecting mirrors are arranged so that an optical path of the light from the illumination optical system is positioned between the first and second reflecting mirrors.

An illumination optical unit for EUV projection lithography illuminates an object field, in which an object to be imaged is arrangeable. A first facet mirror of the illumination optical generates secondary light sources as images of an upstream light source. The first facet mirror includes mirrors which include a mirror surface smaller than 2 mm2 mm. The first facet mirror is a distance |g| from the light source. The illumination optical unit includes a second facet mirror. The two facet mirrors are a distance b from each other. The individual mirrors of the first facet mirror have a focal length f in a plane of incidence of the illumination light on the individual mirrors such that [0.1 bg/(gb)]<f<[10 bg/(gb)].

An optical system of a microlithographic projection exposure apparatus designed for an operating wavelength of at least 150 nm. In one disclosed aspect, the optical system includes an element (11, 21) producing an angular distribution for light incident during the operation of the optical system and a fly's eye condenser (200, 400, 500) which includes two arrangements (210, 220, 410, 420, 510, 520) following one another in the light propagation direction and made of beam-deflecting optical elements (211-213, 221-223, 411-413, 421-423, 511-513, 521-523), which produce a multiplicity of optical channels. No optical element with refractive power is arranged in the beam path between the element (11, 21) producing an angular distribution and the fly's eye condenser (200, 400, 500).

Integrated rotary structure and fabrication method thereof are provided. An integrated rotary structure includes a cylinder material. The cylinder material includes a circular side wall, a third surface at one end of the circular side wall and a fourth surface at another end of the circular side wall opposing to the third surface. The third surface of the cylinder material is machined to form an elliptical reflective surface. The circular side wall of the cylinder material is machined to form a fifth surface and a sixth surface. A central symmetrical axis of the fifth surface and the sixth surface coincides with a first optical axis of the elliptical reflective surface. By using the fifth surface and the sixth surface as holding planes, the third surface is machined to form a curved non-reflective surface surrounding the elliptical reflective surface.

In order to reduce the negative influence of reactive hydrogen on the lifetime of a reflective optical element, particularly inside an EUV lithography device, there is proposed for the extreme ultraviolet and soft X-ray wavelength region a reflective optical element (50) having a reflective surface (60) with a multilayer system (51) and in the case of which the reflective surface (60) has a protective layer system (59) with an uppermost layer (56) composed of silicon carbide or ruthenium, the protective layer system (59) having a thickness of between 5 nm and 25 nm.

A system and method of removing target material debris deposits simultaneously with generating EUV light includes generating hydrogen radicals in situ in the EUV vessel, proximate to the target material debris deposits and volatilizing the target material debris deposits and purging the volatilized target material debris deposits from the EUV vessel without the need of an oxygen containing species in the EUV vessel.