G03F1/64

PELLICLE REMOVAL TOOL

A pellicle removal tool including a stage that holds a photomask and an associated pellicle, two or more arms positioned around the stage and configured to engage pellicle side wells of the pellicle, and two or more actuators each configured to adjust at least a vertical position of a corresponding one of the two or more arms so as to apply a lifting force to the pellicle for removal of the pellicle from the photomask.

Ultra-thin, ultra-low density films for EUV lithography
11740548 · 2023-08-29 · ·

A filtration formed nanostructure pellicle film is disclosed. The filtration formed nanostructure pellicle film includes a plurality of carbon nanofibers that are intersected randomly to form an interconnected network structure in a planar orientation. The interconnected structure allows for a high minimum EUV transmission rate of at least 92%, with a thickness ranging from a lower limit of 3 nm to an upper limit of 100 nm, to allow for effective EUV lithography processing.

Ultra-thin, ultra-low density films for EUV lithography
11740548 · 2023-08-29 · ·

A filtration formed nanostructure pellicle film is disclosed. The filtration formed nanostructure pellicle film includes a plurality of carbon nanofibers that are intersected randomly to form an interconnected network structure in a planar orientation. The interconnected structure allows for a high minimum EUV transmission rate of at least 92%, with a thickness ranging from a lower limit of 3 nm to an upper limit of 100 nm, to allow for effective EUV lithography processing.

APPARATUS FOR ASSEMBLY OF A RETICLE ASSEMBLY

An object handling apparatus for handling a generally planar object, the object handling apparatus including: two support arms, at least one of the two support arms movable relative to another support arm generally in a plane such that the two support arms are operable to grip and hold an object disposed in the plane, wherein each of the support arms includes at least one support pad and at least one aligner, the support pads configured to locally contact a surface of the object and apply a force thereto generally perpendicular to the plane so as to support the object and the at least one aligner configured to locally contact a surface of the object and apply a force thereto generally in the plane so as to grip the object.

APPARATUS FOR ASSEMBLY OF A RETICLE ASSEMBLY

An object handling apparatus for handling a generally planar object, the object handling apparatus including: two support arms, at least one of the two support arms movable relative to another support arm generally in a plane such that the two support arms are operable to grip and hold an object disposed in the plane, wherein each of the support arms includes at least one support pad and at least one aligner, the support pads configured to locally contact a surface of the object and apply a force thereto generally perpendicular to the plane so as to support the object and the at least one aligner configured to locally contact a surface of the object and apply a force thereto generally in the plane so as to grip the object.

PHOTOMASK ASSEMBLY AND METHOD OF FORMING THE SAME

A portion of a buffer layer on a backside of a substrate of a photomask assembly may be removed prior to formation of one or more capping layers on the backside of the substrate. The one or more capping layers may be formed directly on the backside of the substrate where the buffer layer is removed from the substrate, and a hard mask layer may be formed directly on the one or more capping layers. The one or more capping layers may include a low-stress material to promote adhesion between the one or more capping layers and the substrate, and to reduce and/or minimize peeling and delamination of the capping layer(s) from the substrate. This may reduce the likelihood of damage to the pellicle layer and/or other components of the photomask assembly and/or may increase the yield of an exposure process in which the photomask assembly is used.

PHOTOMASK ASSEMBLY AND METHOD OF FORMING THE SAME

A portion of a buffer layer on a backside of a substrate of a photomask assembly may be removed prior to formation of one or more capping layers on the backside of the substrate. The one or more capping layers may be formed directly on the backside of the substrate where the buffer layer is removed from the substrate, and a hard mask layer may be formed directly on the one or more capping layers. The one or more capping layers may include a low-stress material to promote adhesion between the one or more capping layers and the substrate, and to reduce and/or minimize peeling and delamination of the capping layer(s) from the substrate. This may reduce the likelihood of damage to the pellicle layer and/or other components of the photomask assembly and/or may increase the yield of an exposure process in which the photomask assembly is used.

MULTILAYER GRAPHENE DIRECT GROWTH METHOD AND METHOD FOR MANUFACTURING PELLICLE FOR EXTREME ULTRAVIOLET LITHOGRAPHY USING THE SAME
20220146928 · 2022-05-12 ·

This application relates to a method for direct growth of multilayer graphene used as a core layer of a pellicle for extreme ultraviolet lithography. This application also relates to a method for manufacturing the pellicle for extreme ultraviolet lithography by using the multilayer graphene direct growth method. The multilayer graphene direct growth method may include forming few-layer graphene on a silicon nitride substrate, forming a metal catalyst layer on the few-layer graphene, and forming an amorphous carbon layer on the metal catalyst layer. The method may also include directly growing multilayer graphene from the few-layer graphene used as a seed layer by interlayer exchange between the metal catalyst layer and the amorphous carbon layer through heat treatment.

MULTILAYER GRAPHENE DIRECT GROWTH METHOD AND METHOD FOR MANUFACTURING PELLICLE FOR EXTREME ULTRAVIOLET LITHOGRAPHY USING THE SAME
20220146928 · 2022-05-12 ·

This application relates to a method for direct growth of multilayer graphene used as a core layer of a pellicle for extreme ultraviolet lithography. This application also relates to a method for manufacturing the pellicle for extreme ultraviolet lithography by using the multilayer graphene direct growth method. The multilayer graphene direct growth method may include forming few-layer graphene on a silicon nitride substrate, forming a metal catalyst layer on the few-layer graphene, and forming an amorphous carbon layer on the metal catalyst layer. The method may also include directly growing multilayer graphene from the few-layer graphene used as a seed layer by interlayer exchange between the metal catalyst layer and the amorphous carbon layer through heat treatment.

PELLICLE FRAME FOR EUV LITHOGRAPHY

A pellicle frame includes: a first portion; and a plurality of second portions. The first portion is for connection to a border of a pellicle. The first portion includes a hollow and generally rectangular body. The plurality of second portions are for connection to a patterning device. The first portion and the plurality of second portions are all formed from a first material. Each of the second portions is connected to the first portion by a spring portion formed from the first material. Such a pellicle frame is advantageous since the first portion, the plurality of second portions and the spring portions are all formed from a same material.