G03F1/64

PELLICLE FRAME FOR EUV LITHOGRAPHY

A pellicle frame includes: a first portion; and a plurality of second portions. The first portion is for connection to a border of a pellicle. The first portion includes a hollow and generally rectangular body. The plurality of second portions are for connection to a patterning device. The first portion and the plurality of second portions are all formed from a first material. Each of the second portions is connected to the first portion by a spring portion formed from the first material. Such a pellicle frame is advantageous since the first portion, the plurality of second portions and the spring portions are all formed from a same material.

EUV PELLICLE WITH STRUCTURED VENTILATION FRAME
20230259020 · 2023-08-17 ·

A lithography system includes an exposure device and a reticle structure disposed in the exposure device. The exposure device includes a reticle having patterned features, a membrane having a boarder section, and a frame disposed and forming an enclosure between the reticle and the membrane to encircle the patterned features. The frame includes a plurality of holes including at least one slit-shaped hole having one side formed by the reticle and three sides formed by the frame.

EUV PELLICLE WITH STRUCTURED VENTILATION FRAME
20230259020 · 2023-08-17 ·

A lithography system includes an exposure device and a reticle structure disposed in the exposure device. The exposure device includes a reticle having patterned features, a membrane having a boarder section, and a frame disposed and forming an enclosure between the reticle and the membrane to encircle the patterned features. The frame includes a plurality of holes including at least one slit-shaped hole having one side formed by the reticle and three sides formed by the frame.

PELLICLE FOR EUV LITHOGRAPHY MASKS AND METHODS OF MANUFACTURING THEREOF
20230259021 · 2023-08-17 ·

A pellicle for an extreme ultraviolet (EUV) reflective mask includes a pellicle frame and a main membrane attached to the pellicle frame. The main membrane includes network of boron nitride nanotubes without containing a carbon nanotube.

PELLICLE FOR EUV LITHOGRAPHY MASKS AND METHODS OF MANUFACTURING THEREOF
20230259021 · 2023-08-17 ·

A pellicle for an extreme ultraviolet (EUV) reflective mask includes a pellicle frame and a main membrane attached to the pellicle frame. The main membrane includes network of boron nitride nanotubes without containing a carbon nanotube.

ADHESIVE COMPOSITION, METHOD FOR PREPARING THE SAME, RETICLE ASSEMBLY INCLUDING THE SAME, AND METHOD FOR FABRICATING RETICLE ASSEMBLY INCLUDING THE SAME

An adhesive composition, a method for preparing the same, a reticle assembly including the same, and a method for fabricating the reticle assembly including the same are provided. The adhesive composition includes a polyphenol compound including tannic acid, a polymer including polyvinyl alcohol, and a solvent including water and alcohol.

ADHESIVE COMPOSITION, METHOD FOR PREPARING THE SAME, RETICLE ASSEMBLY INCLUDING THE SAME, AND METHOD FOR FABRICATING RETICLE ASSEMBLY INCLUDING THE SAME

An adhesive composition, a method for preparing the same, a reticle assembly including the same, and a method for fabricating the reticle assembly including the same are provided. The adhesive composition includes a polyphenol compound including tannic acid, a polymer including polyvinyl alcohol, and a solvent including water and alcohol.

Pellicle frame with stress relief trenches

A photomask assembly may be formed such that stress relief trenches are formed in a pellicle frame of the photomask assembly. The stress relief trenches may reduce or prevent damage to a pellicle that may otherwise result from deformation of the pellicle. The stress relief trenches may be formed in areas of the pellicle frame to allow the pellicle frame to deform with the pellicle, thereby reducing the amount damage to the pellicle caused by the pellicle frame.

Pellicle frame with stress relief trenches

A photomask assembly may be formed such that stress relief trenches are formed in a pellicle frame of the photomask assembly. The stress relief trenches may reduce or prevent damage to a pellicle that may otherwise result from deformation of the pellicle. The stress relief trenches may be formed in areas of the pellicle frame to allow the pellicle frame to deform with the pellicle, thereby reducing the amount damage to the pellicle caused by the pellicle frame.

EXTREME ULTRAVIOLET LITHOGRAPHY METHOD USING ROBUST, HIGH TRANSMISSION PELLICLE

A robust, high-transmission pellicle for extreme ultraviolet lithography systems is disclosed. In one example, the present disclosure provides a pellicle that includes a membrane and a frame supporting the membrane. The membrane may be formed from at least one of a transparent carbon-based film and a transparent silicon based film. The at least one of the transparent carbon-based film and the transparent silicon based film may further be coated with a protective shell. The frame may include at least one aperture to allow for a flow of air through a portion of the pellicle.