A photomask assembly may be formed such that stress relief trenches are formed in a pellicle frame of the photomask assembly. The stress relief trenches may reduce or prevent damage to a pellicle that may otherwise result from deformation of the pellicle. The stress relief trenches may be formed in areas of the pellicle frame to allow the pellicle frame to deform with the pellicle, thereby reducing the amount damage to the pellicle caused by the pellicle frame.

A photomask assembly may be formed such that stress relief trenches are formed in a pellicle frame of the photomask assembly. The stress relief trenches may reduce or prevent damage to a pellicle that may otherwise result from deformation of the pellicle. The stress relief trenches may be formed in areas of the pellicle frame to allow the pellicle frame to deform with the pellicle, thereby reducing the amount damage to the pellicle caused by the pellicle frame.

A stud attachment device for attaching a plurality of studs to a photomask constituting a reticle. The stud attachment device including a body; a plurality of holders extending from the body, the holders allowing the studs to be laid thereon, respectively; and a pressure regulator for independently controlling pressures of the holders when the studs are attached to the photomask.

Provided is an agglutinant for pellicles that can reduce residues stuck onto an exposure original plate when a pellicle is peeled from the exposure original plate after exposure, in particular exposure using ArF as an exposure light source, and also provided are a pellicle, an exposure original plate with a pellicle, a method for regenerating an exposure original plate, and a peeling residue reduction method.

An agglutinant for pellicles for bonding a pellicle to an exposure original plate, the agglutinant comprising an acrylic polymer as a base material, the acrylic polymer comprising, as monomer components: a (meth)acrylic acid alkyl ester having a C.sub.4 or less alkyl group; and a (meth)acrylic acid ester having an ether bond.

Provided is an agglutinant for pellicles that can reduce residues stuck onto an exposure original plate when a pellicle is peeled from the exposure original plate after exposure, in particular exposure using ArF as an exposure light source, and also provided are a pellicle, an exposure original plate with a pellicle, a method for regenerating an exposure original plate, and a peeling residue reduction method.

An agglutinant for pellicles for bonding a pellicle to an exposure original plate, the agglutinant comprising an acrylic polymer as a base material, the acrylic polymer comprising, as monomer components: a (meth)acrylic acid alkyl ester having a C.sub.4 or less alkyl group; and a (meth)acrylic acid ester having an ether bond.

Monolithic framed pellicle membrane integrating a structural framing member with a membrane spanning the framing member. The monolithic frame pellicle membrane is suitable as an overlay of a reticle employed in lithography operations of integrated circuit manufacture. A semiconductor-on-insulator (SOI) wafer may be machined from the backside, for example with a bonnet polisher, to form a pellicle framing member by removing a portion of a base semiconductor substrate of the SOI wafer selectively to top semiconductor layer of the SOI wafer, which is retained as a pellicle membrane. In some exemplary embodiments suitable for extreme ultraviolet (EUV) lithography applications, at least the top semiconductor layer of the SOI wafer is a substantially monocrystalline silicon layer.

Monolithic framed pellicle membrane integrating a structural framing member with a membrane spanning the framing member. The monolithic frame pellicle membrane is suitable as an overlay of a reticle employed in lithography operations of integrated circuit manufacture. A semiconductor-on-insulator (SOI) wafer may be machined from the backside, for example with a bonnet polisher, to form a pellicle framing member by removing a portion of a base semiconductor substrate of the SOI wafer selectively to top semiconductor layer of the SOI wafer, which is retained as a pellicle membrane. In some exemplary embodiments suitable for extreme ultraviolet (EUV) lithography applications, at least the top semiconductor layer of the SOI wafer is a substantially monocrystalline silicon layer.

A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.

A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.

A filtration formed nanostructure pellicle film is disclosed. The filtration formed nanostructure pellicle film includes a plurality of carbon nanofibers that are intersected randomly to form an interconnected network structure in a planar orientation. The interconnected structure allows for a high minimum EUV transmission rate of at least 92%, with a thickness ranging from a lower limit of 3 nm to an upper limit of 100 nm, to allow for effective EUV lithography processing.