A monomer having a plurality of tertiary alcoholic hydroxyl groups is provided. A useful polymer is obtained by polymerizing the monomer. From a resist composition comprising the polymer, a negative pattern which is insoluble in alkaline developer and has high etch resistance is formed at a high resolution.

A compound having a group represented by formula (Ia): ##STR00001##
wherein R.sup.1 and R.sup.2 each independently represent a C.sub.1 to C.sub.8 fluorinated alkyl group, ring W represents a C.sub.5 to C.sub.18 alicyclic hydrocarbon group that may have a substituent, and * represents a binding site.

A salt having a group represented by formula (a): ##STR00001## wherein X.sup.a and X.sup.b each independently represent an oxygen atom or a sulfur atom, X.sup.1 represents a divalent group having an alicyclic hydrocarbon group where a methylene group may be replaced by an oxygen atom or a carbonyl group, and where a hydrogen atom may be replaced by a hydroxy group or a fluorine atom, and * represents a binding site.

A pattern is formed by coating a resist composition comprising a fluorine-containing polymer, a base resin, an acid generator, and an organic solvent, baking the composition at 50-300° C. in an atmosphere of a solvent having a boiling point of 60-250° C., exposure, and development. In immersion lithography, the resist film is improved in water repellency and water slip, and LWR after pattern formation is reduced. In EB or EUV lithography, outgassing is suppressed and LWR is reduced.

A photosensitive resin composition for forming an interlayer insulating film, which contains an alkali-soluble resin (A), a photosensitizer (B), a thermal acid generator (T) which generates an acid when heated, and a silane coupling agent (C), and wherein the alkali-soluble resin (A) has a constituent unit (A1) represented by general formula (a-1) or an alicyclic epoxy group-containing unit (A3). In general formula (a-1), R represents a hydrogen atom or a methyl group; and Ra.sup.01 represents a hydrogen atom or an organic group having a hydroxyl group.

##STR00001##

A radiation-sensitive resin composition includes: a first polymer including a structural unit which includes an acid-labile group; a second polymer including a structural unit represented by formula (1); and a radiation-sensitive acid generator. R.sup.1 represents a monovalent organic group having 1 to 20 carbon atoms; R.sup.2 represents a monovalent organic group having 1 to 20 carbon atoms; X represents a divalent organic group having 1 to 20 carbon atoms; and Y represents a divalent hydrocarbon group having 1 to 20 carbon atoms. The divalent organic group represented by X, the monovalent organic group represented by R.sup.2, or both has a fluorine atom.

##STR00001##

A photosensitive composition for EUV light includes a resin X of which a polarity is increased by an action of an acid so that a solubility in an alkali developer is increased and a solubility in an organic solvent is decreased, and a photoacid generator; or a resin Y which includes a repeating unit having a photoacid generating group and of which a polarity is increased by an action of an acid so that a solubility in an alkali developer is increased and a solubility in an organic solvent is decreased, in which the photosensitive composition for EUV light satisfies both Requirement 1 and Requirement 2.

A resist composition is provided comprising a base polymer and a quencher comprising a salt compound obtained from a nitrogen-containing compound having an iodine or bromine-substituted hydrocarbyl group (exclusive of iodine or bromine-substituted aromatic ring) bonded to the nitrogen atom via an ester bond-containing group and a compound having a 1,1,1,3,3,3-hexafluoro-2-propanol group. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

Method of forming pattern in photoresist layer includes forming photoresist layer over substrate, selectively exposing photoresist layer to actinic radiation forming latent pattern. Latent pattern is developed by applying developer to form pattern. Photoresist layer includes photoresist composition including polymer:

##STR00001##

A.sub.1, A.sub.2, L are direct bond, C4-C30 aromatic, C4-C30 alkyl, C4-C30 cycloalkyl, C4-C30 hydroxylalkyl, C4-C30 alkoxy, C4-C30 alkoxyl alkyl, C4-C30 acetyl, C4-C30 acetylalkyl, C4-C30 alkyl carboxyl, C4-C30 cycloalkyl carboxyl, C4-C30 hydrocarbon ring, C4-C30 heterocyclic, —COO—, A1 and A2 are not both direct bonds, and are unsubstituted or substituted with a halogen, carbonyl, or hydroxyl; A.sub.3 is C6-C14 aromatic, wherein A.sub.3 is unsubstituted or substituted with halogen, carbonyl, or hydroxyl; R.sub.1 is acid labile group; Ra, Rb are H or C1-C3 alkyl; R.sub.f is direct bond or C1-C5 fluorocarbon; PAG is photoacid generator; 0≤x/(x+y+z)≤1, 0≤y/(x+y+z)≤1, and 0≤z/(x+y+z)≤1.

The inventive concept relates to a three-dimensional crosslinker composition and a method of manufacturing an electronic device using the same. According to the inventive concept, the three-dimensional crosslinker composition may be represented by Formula 1 below.

##STR00001##