A radiation-sensitive resin composition includes: a resin containing a structural unit A represented by formula (1); at least one radiation-sensitive acid generator selected from the group consisting of a radiation-sensitive acid generator represented by formula (2-1) and a radiation-sensitive acid generator represented formula (2-2); and a solvent. At least one R.sup.3 is an acid-dissociable group; and R.sup.41 is a hydrogen atom or a protective group to be deprotected by action of an acid. At least one of R.sup.f1 and R.sup.f2 is a fluorine atom or a fluoroalkyl group; R.sup.5a is a monovalent organic group having a cyclic structure; X.sub.1.sup.+ is a monovalent onium cation; R.sup.5b is a monovalent organic group, and X.sub.2.sup.+ is a monovalent onium cation whose atom having a positive charge is not an atom forming a cyclic structure. ##STR00001##

Aspects of the present disclosure provide fluoropolymers and methods for forming and using such fluoropolymers. Fluoropolymers include polyfluorobenzoxazines and polyfluoroimides. Methods for forming polyphthalonitriles are also provided. The present disclosure is further directed to compositions containing one or more fluoropolymers and one or more metal oxides.

An example of a flow cell includes a substrate; a first primer set attached to a first region on the substrate, the first primer set including an un-cleavable first primer and a cleavable second primer; and a second primer set attached to a second region on the substrate, the second primer set including a cleavable first primer and an un-cleavable second primer.

A method of processing a substrate includes: providing structures on a surface of a substrate; depositing a self-assembled monolayer (SAM) over the structures and the substrate, the SAM being reactive to a predetermined wavelength of radiation; determining a first pattern of radiation exposure, the first pattern of radiation exposure having a spatially variable radiation intensity across the surface of the substrate and the structures; exposing the SAM to radiation according to the first pattern of radiation exposure, the SAM being configured to react with the radiation; developing the SAM with a predetermined removal fluid to remove portions of the SAM that are not protected from the predetermined fluid; and depositing a spacer material on the substrate and the structures, the spacer material being deposited at varying thicknesses based on an amount of the SAM remaining on the surface of the substrate and the structures.

A positive resist composition is provided comprising (A) a specific sulfonium salt as quencher, (B) a sulfonium salt consisting of a fluorinated sulfonate anion and a sulfonium cation as acid generator, and (C) a base polymer comprising repeat units having an acid labile group. The resist composition has a high sensitivity and resolution, improved LWR or CDU, and a broad process window and forms a pattern of good profile after exposure.

Novel photoresist additive compositions including developer solubility groups which enhance the solubility of the photoresist additive in a developer, such as a TMAH developer. The novel photoresist additive compositions also include functional groups to address outgassing and out-of-band issues.

A novel onium salt of formula (1) and a chemically amplified resist composition comprising the same as a PAG are provided. When processed by photolithography using KrF or ArF excimer laser, EB or EUV, the resist composition has a high sensitivity and reduced acid diffusion and is improved in exposure latitude, MEF, and LWR. ##STR00001##

A photosensitive composition for EUV light includes a predetermined resin and a photoacid generator, or includes a predetermined resin having a repeating unit having a photoacid generating group, and satisfies Requirements 1 to 3, Requirement 1: The A value determined by Formula (1) is 0.14 or more,
A=([H]×0.04+[C]×1.0+[N]×2.1+[O]×3.6+[F]×5.6+[S]×1.5+[I]×39.5)/([H]×1+[C]×12+[N]×14+[O]×16+[F]×19+[S]×32+[I]×127)  Formula(1) Requirement 2: The concentration of solid contents in the photosensitive composition for EUV light is 5.0% by mass or less, Requirement 3: The content of the photoacid generator is 5% to 50% by mass with respect to the total solid content in the photosensitive composition for EUV light.

A resist composition including: a base material component (A), a compound (B1) represented by Formula (b1-1), and a fluorine additive component (F) which contains a fluororesin component (F1) having a constitutional unit (f1) represented by Formula (f-1) and a constitutional unit (f2) represented by Formula (f-2); in Formula (b1-1), V.sup.b01 represents a fluorinated alkylene group, R.sup.b02 represents a fluorine atom or a hydrogen atom, a total number of fluorine atoms as V.sup.b01 and R.sup.b02 is 2 or 3; in Formula (f-1), Rf.sup.1 represents a monovalent organic group having a fluorine atom; in Formula (f-2), Rf.sup.2 represents a group represented by Formula (f2-r-1), which is a group containing a polycyclic aliphatic cyclic group. ##STR00001##

A fluorocarboxylic acid-containing polymer comprising recurring units having formula (A1), but not acid labile group-containing recurring units is provided. A resist composition comprising the same offers a high sensitivity and is unsusceptible to nano-bridging or pattern collapse independent of whether it is of positive or negative tone. ##STR00001##